DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits ID RDS(ON) Max TA = +25°C 44mΩ @ VGS = 10V 5.0A 60mΩ @ VGS = 4.5V 4.3A 60V 100% Unclamped Inductive Switch (UIS) Test in Production Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Backlighting TSOT26 Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) D 1 6 D D 2 5 D G 3 4 S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN6040SVTQ-7 DMN6040SVTQ-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 32D Date Code Key Year Code Month Code 2010 X Jan 1 … … Feb 2 DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 2017 E Mar 3 32D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 8 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N 2025 M Dec D December 2015 © Diodes Incorporated DMN6040SVTQ ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State t<10s Continuous Drain Current (Note 7) VGS = 5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH ID Value 60 ±20 5.0 4.0 ID 6.3 5.0 A ID 4.3 3.4 A 5.4 4.3 2.1 30 14.2 10 ID IS IDM IAR EAR Units V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 1.2 0.75 106 69 1.8 1.1 68 44 20 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 2 of 8 www.diodes.com December 2015 © Diodes Incorporated DMN6040SVTQ 100 PW = 10µs Single Pulse RJA = 72C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 80 ID, DRAIN CURRENT (A) P(PK), PEAK TRANSIENT POIWER (W) 60 40 10 RDS(on) Limited DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs 20 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 100 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 72C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 3 of 8 www.diodes.com 10 100 1,000 December 2015 © Diodes Incorporated DMN6040SVTQ ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 100 100 V nA nA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) |YFS| VSD 30 35 4.5 0.7 3 44 60 1.2 V Static Drain-Source On-Resistance 1 VDS = VGS, ID = 250µA VGS = 10V, ID = 4.3A VGS = 4.5V, ID = 4A VDS = 10V, ID = 4.3A VGS = 0V, IS = 1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 1,287 57 44 1.2 22.4 10.4 4.9 3.0 6.6 8.1 20.1 4.0 18 11.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 25V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.3A ns VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A ns nC IS = 4.3A, dI/dt = 100A/μs IS = 4.3A, dI/dt = 100A/μs 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 4 of 8 www.diodes.com December 2015 © Diodes Incorporated DMN6040SVTQ 20 20 VDS = 5.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 8 12 8 TA = 150°C TA = 125°C 4 4 TA = 85°C T A = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.10 0.09 0.08 0.07 0.06 0.05 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE Fig. 5 Typical Transfer Characteristics 5 0.10 0.08 0.06 ID = 3.5A ID = 4.5A 0.04 0.02 20 0 0 1 2 3 4 5 6 7 8 9 V GS, GATE-SOURCE VOLTAGE (V) Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage 10 2.4 0.10 0.09 2.2 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 16 TA = 150°C 0.08 0.07 TA = 125°C 0.06 0.05 T A = 85°C 0.04 TA = 25°C 0.03 0.02 TA = -55°C 0.01 VGS = 10V ID = 10A 2.0 1.8 1.6 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 ID, DRAIN CURRENT Fig. 8 Typical On-Resistance vs. Drain Current and Temperature DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 20 5 of 8 www.diodes.com 0 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 9 On-Resistance Variation with Temperature December 2015 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 4.0 0.10 0.08 VGS = 4.5V ID = 500mA 0.06 0.04 VGS = 2.5V ID = 200mA 0.02 3.5 3.0 2.5 ID = 1mA 2.0 1.5 ID = 250µA 1.0 0.5 0 - 50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 11 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 10 On-Resistance Variation with Temperature CT, JUNCTION CAPACITANCE (pF) 20 IS, SOURCE CURRENT (V) 16 TA = 25°C 12 8 4 Ciss Coss Crss f = 1MHz 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 12 Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 30 VDS = 30V ID = 4.3A VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6040SVTQ 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate Charge DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 25 6 of 8 www.diodes.com December 2015 © Diodes Incorporated DMN6040SVTQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT26 D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e Seating Plane L2 01(4x) b A2 A1 A Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMN6040SVTQ Document number: DS38508 Rev. 1 - 2 7 of 8 www.diodes.com December 2015 © Diodes Incorporated DMN6040SVTQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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