Fairchild FJX3008R Switching application Datasheet

FJX3008R
FJX3008R
Switching Application (Bias Resistor Built In)
3
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=22KΩ)
• Complement to FJX4008R
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Marking
S08
Equivalent Circuit
C
R1
B
R2
NPN Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
10
IC
V
Collector Current
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
IC=100µΑ, IB=0
ICBO
Collector Cut-off Current
VCB=40V, IE=0
Min.
50
Typ.
Max.
Units
V
0.1
µA
50
V
hFE
DC Current Gain
VCE=5V, IC=5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
56
fT
Current Gain Bandwidth Product
IC=10mA, IB=0.5mA
250
MHz
Cob
Output Capacitance
VCB=10V, IE=0
f=1.0MHz
3.7
pF
0.3
VI(off)
Input Off Voltage
VCE=5V, IC=100µA
VI(on)
Input On Voltage
VCE=0.3V, IC=2mA
R1
Input Resistor
32
R1/R2
Resistor Ratio
1.9
©2002 Fairchild Semiconductor Corporation
0.8
V
V
4
V
47
62
KΩ
2.1
2.4
Rev. A2, August 2002
FJX3008R
Typical Characteristics
100
VCE = 5V
R1 = 47K
R2 = 22K
VCE = 0.3V
R1 = 47K
R2 = 22K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
1000
100
10
100
1
0.1
0.1
10
1
10
1000
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
400
VCE = 5V
R1 = 47K
R2 = 22K
350
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
1000
100
10
0.6
300
250
200
150
100
50
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
2.4
2.6
2.8
0
25
50
75
100
125
150
175
o
T a[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A2, August 2002
FJX3008R
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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