NJRC NJG1101F-C5 Wide band agc amplifier gaas mmic Datasheet

NJG1101F
WIDE BAND AGC AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION
NJG1101F is a GaAs MMIC designed mainly for wireless
phone handsets at frequency range of 850MHz from 2.5GHz.
NJG1101F is a variable gain amplifier with 40 dB dynamic
range and exhibits low current consumption.
MTP6 package is adopted.
nFEATURES
lSingle and low voltage operation
lLow current consumption
lSmall signal gain
nPACKAGE OUTLINE
NJG1101F
VDD=+3.0V typ.
IDD=10mA typ.
18dB typ. @f=1.5GHz
(f=0.85~2.5GHz @3dB down)
40dB typ. @VCONT=+0.1~+2.0V
+1.5dBm typ. @f=1.5GHz
MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm)
lWide gain control range
lPout at 1dB gain compression point
lPackage
nPIN CONFIGURATION
F TYPE
(Top View)
Note:
1
6
2
5
3
4
Pin connection
1.RFin
2.GND
3.VCONT
4.RFout & VDD
5.GND
6.VDD
is a package orientation mark.
-1-
NJG1101F
nABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain Voltage
Gain Control Voltage
Input Power
Power Dissipation
Operating Temperature
(Ta=+25°C, Zs=Zl=50Ω)
RATINGS
UNITS
6
V
3
V
10
dBm
300
mW
-40~+85
°C
SYMBOL
CONDITIONS
VDD
VCONT
VDD=3V
Pin
VDD=3V, VCONT=2V
PD
Topr
Storage Temperature
Tstg
-55~+150
°C
nELECTRICAL CHARACTERISTICS1 (Wide band: Measured at TEST CIRCUIT 1)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating Frequency
freq
VDD=3.0V
0.85
1.5
2.5
GHz
Drain Voltage
VDD
Operating Current
IDD
Small Signal Gain
Gain
Gain Flatness
Gflat
Gain Control
Range
Gcont
Pout at 1dB Gain
Compression point
Adjacent Channel
Leakage Power
(PDC Regulation)
-2-
VDD=3.0V, VCONT=2V,
Pout=-10dBm
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1.5GHz
VDD=3.0V, VCONT=2V, Pin=-25dBm
f=0.85~2.5GHz
VDD=3.0V, VCONT=0.1~2.0V,
Pin=-25dBm, f=1.5GHz
2.7
3.0
5.0
V
-
10
13
mA
15.5
18
21
dB
-
3
-
dB
35
40
-
dB
P-1dB
VDD=3.0V, VCONT=2V, f=1.5GHz
-
+1.5
-
dBm
Pacp
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1.5GHz
Offset=50kHz, Pin ; π/4 DQPSK
-
-68
-
dBc
NJG1101F
nELECTRICAL CHARACTERISTICS 2 (800MHz Band: Measured at TEST CIRCUIT 2)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating Frequency
freq
Drain Voltage
VDD
Operating Current
IDD
Small Signal Gain
Gain
Gain Flatness
Gflat
Gain Control
Range
Gcont
Pout at 1dB Gain
Compression point
Adjacent Channel
Leakage Power
(PDC Regulation)
VDD=3.0V
VDD=3.0V, VCONT=2V,
Pout=-10dBm
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1.5GHz
VDD=3.0V, VCONT=2V,
Pin=-25dBm, f=0.85~2.5GHz
VDD=3.0V, VCONT=0.1~2.0V,
Pin=-25dBm, f=1.5GHz
850
938
960
MHz
2.7
3.0
5.0
V
-
10
13
mA
15.5
18
21
dB
-
0.5
-
dB
35
40
-
dB
P-1dB
VDD=3.0V, VCONT=2V, f=1.5GHz
-
+1.5
-
dBm
Pacp
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1.5GHz
offset=50kHz, Pin ; π/4 DQPSK
-
-68
-
dBc
Input VSWR
VSWRi
VDD=3.0V, VCONT=2V, f=1.5GHz
-
1.8
-
Output VSWR
VSWRo
VDD=3.0V, VCONT=2V, f=1.5GHz
-
1.5
-
-3-
NJG1101F
nELECTRICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GH: Measured at TEST CIRCUIT 2)
(Ta=25°C, Zs=Zl=50Ω)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating Frequency 1
freq1
VDD=3.0V
1429 1441 1453
MHz
Operating Frequency 2
freq2
VDD=3.0V
1800 1900 1920
MHz
Drain Voltage
VDD
Operating Current
IDD
Small Signal Gain
Gain
Gain Flatness 1
Gflat1
Gain Flatness 2
Gflat2
Gain Control
Range
Pout at 1dB Gain
Compression point 1
Pout at 1dB Gain
Compression point 2
Adjacent Channel
Leakage Power 1
(PDC Regulation)
Adjacent Channel
Leakage Power 2
(PDC Regulation)
Gcont
P-1dB1
P-1dB2
Pacp1
Pacp2
VDD=3.0V, VCONT=2V,
Pout=-10dBm
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1.5GHz
VDD=3.0V, VCONT=2V,
Pin=-25dBm, f=1429~1453MHz
VDD=3.0V, VCONT=2V,
Pin=-25dBm, f=1800~1920MHz
VDD=3.0V, VCONT=0.1~2.0V,
Pin=-25dBm
VDD=3.0V, VCONT=2V
f=1429~1453MHz
VDD=3.0V, VCONT=2V
f=1800~1920MHz
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1441MHz
offset=50kHz, Pin ; π/4 DQPSK
VDD=3.0V, VCONT=2V,
Pout=-10dBm, f=1900MHz
offset=50kHz, Pin ; π/4 DQPSK
2.7
3.0
5.0
V
-
10
13
mA
15.5
18
21
dB
-
0.5
-
dB
-
0.5
-
dB
35
40
-
dB
-
+1.5
-
dBm
-
+1.0
-
dBm
-
-68
-
dBc
-
-70
-
dBc
Input VSWR
VSWRi
VDD=3.0V, VCONT=2V
-
1.8
-
Output VSWR
VSWRo
VDD=3.0V, VCONT=2V
-
1.5
-
-4-
NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
S21,S11,S22,S12 vs. FREQUENCY
(V =3V, V
DD
20
GAIN vs. FREQUENCY
=2V)
cont
-10
(V =3V)
V
-20
0
-30
S12
-10
-40
10
Gain (dB)
10
S12 (dB)
S21,S11,S22 (dB)
DD
20
S21
0
1.0V
-10
0.5V
0.3V
-20
0.2V
0.1V
-30
-50
2.0V
1.2V
S11
-20
=
cont
0.0V
S22
-40
-30
0.5
-60
1.5
2
Frequency (GHz)
2.5
-50
0.5
3
1
1.5
2
Frequency (GHz)
(V =3V, V
DD
=2V)
(V =4.5V, V
cont
7
20
DD
20
7
6
10
5
10
5
5
4
5
4
3
0
0.5
Gain (dB)
15
NF (dB)
6
NF
1.5
2
NF
2.5
3
3
1
1.5
Frequency (GHz)
2
3
OUTPUT VSWR vs. FREQUENCY
(V =3V)
(V =3V)
DD
7
2.5
Frequency (GHz)
INPUT VSWR vs. FREQUENCY
DD
3.5
6
3
V
V
Output VSWR
5
=2.0V
cont
1.0V
4
0.1V
0.1V
1.0V
3
=2.0V
cont
2.5
1.0V
0.1V
2
0.1V
1.0V
2.0V
2.0V
1.5
2
1
0.5
=3V)
cont
Gain
15
Input VSWR
Gain (dB)
Gain
1
3
GAIN, NF vs. FREQUENCY
GAIN, NF vs. FREQUENCY
0
0.5
2.5
NF (dB)
1
1
1.5
2
Freqency (GHz)
2.5
3
1
0.5
1
1.5
2
Freqency (GHz)
2.5
3
-5-
NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
I
DD
vs. V
GAIN, I
DD
(V
12
DD
=V -1V)
cont
vs. Vcont (Variable Gain)
(V =3V, P =-25dBm)
DD
DD
20
in
13
Gain f=1.5GHz
10
12
11
10
11
2.5GHz
2.5GHz
-10
10
-20
9
I
9
IDD (mA)
Gain (dB)
IDD (mA)
0
DD
1.5GHz
-30
8
V
OUTPUT POWER, I
DD
DD
5
-40
6
DD
-10
-25
-20
-15
-10
-5
cont
=2V, f=2.5GHz)
13
13
12
5
12
11
IDD
(V)
(V =3V, V
Output Power
P-1dB
+1.4dBm
cont
Output Power
P-1dB
+1.0dBm
0
10
-5
11
9
-10
I
9
-30
0
10
DD
-25
-20
-15
-10
-5
0
Input Power (dBm)
Input Power (dBm)
GAIN vs. Vcont
GAIN vs. Vcont
(f=2.5GHz)
(f=1.5GHz)
20
20
10
V =4.5V
10
DD
4.5V
V =4.5V
0
DD
V =3V
Gain (dB)
Gain (dB)
2
10
Output Power (dBm)
5
1.5
OUTPUT POWER, IDD vs. INPUT POWER
IDD (mA)
Output Power (dBm)
10
-30
1
V
(V DD=3V, Vcont =2V, f=1.5GHz)
-5
0.5
(V)
vs. INPUT POWER
0
7
0
DD
-10
0
4.5V
V =3V
DD
-10
-20
3V
-30
-30
0
1
2
3
V
cont
-6-
3V
-20
-40
(V)
4
5
(mA)
4
DD
3
I
2
8
0
1
2
3
V
cont
(V)
4
5
NJG1101F
nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1)
-7-
NJG1101F
nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2)
GAIN vs. V
GAIN vs. FREQUENCY
cont
(V =3V, f=938MHz)
(V =3V)
DD
20
V
cont
DD
20
=2.0V
10
10
1.5V
1.0V
-10
Gain (dB)
Gain (dB)
0
0.5V
0
-10
-20
-20
0.1V
-30
950MHz
-40
0.5
1
-30
1.5
2
2.5
0
3
0.5
1
1.5
V
Frequency (GHz)
cont
INPUT VSWR vs. FREQUENCY
2
2.5
OUTPUT VSWR vs. FREQUENCY
(V =3V)
(V =3V)
DD
DD
5
5
V
3
cont
Output VSWR
Input VSWR
4
0.1V
950MHz
=2.0V
1.0V
2
950MHz
3
0.1V
1.0V
V
2
1
0.6
0.7
0.8
0.9
1
1.1
1
0.6
1.2
0.7
0.8
Frequency (GHz)
OUTPUT POWER, I
DD
vs. INPUT POWER
(V =3V, V
5
12
Output Power
P-1dB
+2.1dBm
0
11
10
Idd
9
-10
-20
-15
-10
Input Power (dBm)
-5
0
PDC800MHz
Adjacent Channel Leakage Power (dBc)
DD
13
-25
1.1
1.2
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
IDD (mA)
Output Power (dBm)
10
-30
1
=2.0V
Frequency (GHz)
(V DD=3V, Vcont =2V, f=938MHz)
-5
0.9
cont
cont
=2V, f=938MHz, offset=50kHz)
-40
20
-50
15
ACP
-60
10
-70
5
RMS Vector Error
-80
-10
-5
0
5
Output Power (dBm)
0
10
RMS Vector Error (%)
4
-8-
3
(V)
NJG1101F
nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2)
ACP, RMS VECTOR ERROR vs. Vcont
ACP, RMS VECTOR ERROR vs. Vcont
(V =3V, Input Power=-25dBm, f=938MHz, offset=50kHz)
-50
15
-60
10
-70
5
0
-80
0
0.5
1
1.5
-40
20
-50
15
-60
10
-70
5
0
-80
2
RMS Vector Error (%)
20
PDC800MHz
Adjacent Channel Leakage Power (dBc)
DD
-40
RMS Vector Error (%)
PDC800MHz
Adjacent Channel Leakage Power (dBc)
DD
(V =3V, Output Power=-10dBm, f=938MHz, offset=50kHz)
0
0.5
1
Vcont (V)
1.5
2
Vcont (V)
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band : Measured on TEST CIRCUIT 2)
GAIN vs. V
GAIN vs. FREQUENCY
cont
(V =3V, f=1441MHz)
(V =3V)
DD
V
cont
DD
20
20
=2.0V
10
10
1.5V
1.0V
Gain (dB)
0.5V
-10
-20
0
-10
0.1V
-20
-30
1.5GHz
-40
0.5
1.9GHz
-30
1
GAIN vs. V
1.5
2
2.5
0
3
0.5
1
2
cont
DD
20
1.5
2.5
INPUT VSWR vs.
V FREQUENCY
(V)
cont
Frequency
(GHz)
(V =3V, f=1.9GHz)
3
(V DD=3V)
5
10
Input VSWR
4
Gain (dB)
Gain (dB)
0
0
-10
1.5GHz 1.9GHz
3
1.0V
2
-20
-30
0
0.5
1
1.5
V
cont
(V)
2
2.5
3
0.1V
1
0.5
Vcont =2.0V
1
1.5
2
2.5
3
Frequency (GHz)
-9-
NJG1101F
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2)
OUTPUT POWER, IDD vs. INPUT POWER
(V =3V, V
(V =3V)
DD
1.5GHz 1.9GHz
0.1V
1.0V
=2.0V
2
1
0.5
1
1.5
2
2.5
12
5
Output Power
P-1dB
+1.1dBm
0
-5
9
-10
3
-30
-25
-20
DD
12
5
11
DD
P-1dB
+1.0dBm
(mA)
Output Power
I
Output Power (dBm)
(V =3V, V
13
10
0
-5
10
Idd
9
-10
-30
-25
-20
-15
-10
-5
15
ACP
10
-60
5
-70
RMS Vector Error
-10
-5
ACP, RMS VECTOR ERROR vs. Vcont
-60
10
-70
5
RMS Vector Error
0
10
PDC1.5GHz
Adjacent Channel Leakage Power (dBc)
15
RMS Vector Error (%)
PHS1.9GHz
Adjacent Channel Leakage Power (dBc)
- 10 -
0
10
5
(VDD=3V, Input Power=-25dBm, f=1441MHz, offset=50kHz)
-50
Output Power (dBm)
0
Output Power (dBm)
ACP
5
=2V, f=1441MHz, offset=50kHz)
-80
20
-80
cont
-50
0
(V DD=3V, Vcont =2V, f=1.9GHz, offset=600kHz)
-40
0
0
20
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
-5
-5
-40
Input Power (dBm)
-10
-10
ACP, RMS VECTOR ERROR vs. OUTPUT POWER
=2V, f=1.9GHz)
PDC1.5GHz
Adjacent Channel Leakage Power (dBc)
cont
-15
Input Power (dBm)
OUTPUT POWER, IDD vs. INPUT POWER
DD
10
Idd
Frequency (GHz)
(V =3V, V
11
-40
20
-50
15
-60
10
-70
5
0
-80
0
0.5
1
Vcont (V)
1.5
2
RMS Vector Error (%)
cont
13
RMS Vector Error (%)
V
=2V, f=1441MHz)
I
Output Power (dBm)
Output VSWR
4
3
cont
10
(mA)
DD
5
DD
OUTPUT VSWR vs. FREQUENCY
NJG1101F
nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2)
ACP, RMS VECTOR ERROR vs. Vcont
ACP, RMS VECTOR ERROR vs. Vcont
20
-50
15
-60
10
-70
5
0
0.5
1
V
cont
1.5
-40
20
-50
15
-60
10
-70
5
0
-80
0
-80
(VDD=3V, Input Power=-25dBm, f=1.9GHz, offset=600kHz)
0
2
RMS Vector Error (%)
-40
RMS Vector Error (%)
PDC1.5GHz
Adjacent Channel Leakage Power (dBc)
DD
PHS1.9GHz
Adjacent Channel Leakage Power (dBc)
(V =3V, Output Power=-10dBm, f=1441MHz, offset=50kHz)
0.5
1
1.5
2
Vcont (V)
(V)
ACP, RMS VECTOR ERROR vs. Vcont
(V =3V, Output Power=-10dBm, f=1.9GHz, offset=600kHz)
-40
20
-50
15
-60
10
-70
5
-80
RMS Vector Error (%)
PHS1.9GHz
Adjacent Channel Leakage Power (dBc)
DD
0
0
0.5
1
V
cont
1.5
2
(V)
- 11 -
NJG1101F
nAPPLICATION CIRCUIT
VDD
6
RF IN
1
AMP
ATT
AMP
4
RF OUT
ZO=50Ω
ZO=50Ω
ATT
3
ZS=50Ω
2
- 12 -
5
VCONT
ZL=50Ω
NJG1101F
nTEST CIRCUIT1 (WIDE BAND)
C3
C4
39pF 1000pF
VDD 3V
C1
39pF
(TOP VIEW)
RF IN
VCONT
0~2V
1
6
2
5
3
4
L1
15nH
C2
39pF
C5
39pF
RF OUT
nTEST CIRCUIT2 (PDC 800MHz, PDC 1.5GHz, PHS 1.9GHz)
C3
C4
39pF 1000pF
VDD 3V
C1R
L2R
(TOP VIEW)
1
6
2
5
3
4
RF IN
VCONT
0~2V
R
L1
15nH
C2R
RF OUT
C5
39pF
NOTE
C2
L2
C1
PDC800MHz
100pF 10nH 100pF
PDC1.5GHz/PHS1.9GHz 10pF 1.5nH 10pF
- 13 -
NJG1101F
nRECOMMENDED PCB DESIGN
(Top View)
20mm
VDD
GND
C4
C3
RF
IN
C1
L1
C2
C5
VCONT
GND
RF
OUT
PCB: FR-4 f=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (ZO=50Ω)
CHIP SIZE: 1608
22.5mm
Notes:
[1]Following chip capacitors work as bypass capacitor, and should be connected to
corresponding terminals and the ground plane as close as possible.
¬C3
-C4
®C5
[2]Following chip capacitors are necessary to block DC bias.
¬C1
-C2
[3]Parts list
- 14 -
Parts ID
Comment
C1~C5
MURATA GRM36 Series
L1~L2
TAIYO-YUDEN HK1608 Series
NJG1101F
nPACKAGE OUTLINE (MTP6)
Lead material
Lead surface finish
Molding material
UNIT
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
: Copper
: Solder plating
: Epoxy resin
: mm
: 14mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 15 -
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