Order this document by MPIC2113/D SEMICONDUCTOR TECHNICAL DATA Power Products Division HIGH AND LOW SIDE DRIVER The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross–conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N–channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. • • • • • • • • • • • • • 14 1 P SUFFIX PLASTIC PACKAGE CASE 646–06 Floating Channel Designed for Bootstrap Operation Fully Operational to +600 V Tolerant to Negative Transient Voltage 16 dV/dt Immune 1 Gate Drive Supply Range from 10 to 20 V DW SUFFIX PLASTIC PACKAGE CASE 751G–02 SOIC – WIDE Undervoltage Lockout for Both Channels Separate Logic Supply Operating Supply Range from 5 to 20 V Logic and Power Ground Operating Offset Range from –5 to +5 V ORDERING INFORMATION CMOS Schmitt–triggered Inputs with Pull–down Device Cycle by Cycle Edge–triggered Shutdown Logic Matched Propagation Delay for Both Channels Package MPIC2113DW SOIC WIDE MPIC2113P PDIP Outputs In Phase with Inputs PRODUCT SUMMARY VOFFSET 600 V MAX IO+/– 2 A/2 A VOUT 10 – 20 V ton/off (typical) 120 & 94 ns Delay Matching 10 ns PIN CONNECTIONS (TOP VIEW) 8 9 10 VDD HIN 11 SD 12 LIN 13 VSS 14 HO 7 VB VS 6 5 4 VCC COM 3 LO 1 2 14 LEADS PDIP MPIC2113P 9 HO 8 10 VB VS 7 11 12 VDD HIN 13 SD 14 LIN 15 VSS 16 6 5 4 VCC COM 3 LO 1 2 16 LEADS SOIC (WIDE BODY) MPIC2113DW This document contains information on a new product. Specifications and information herein are subject to change without notice. TMOS Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MPIC2113 SIMPLIFIED BLOCK DIAGRAM VB VDD UV DETECT HV LEVEL SHIFT R Q S VDD/VCC LEVEL SHIFT HIN R R S PULSE FILTER Q HO VS PULSE GEN SD VCC UV DETECT VDD/VCC LEVEL SHIFT LIN S LO R Q DELAY VSS COM ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Rating Symbol Min Max Unit High Side Floating Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Supply Voltage Logic Supply Offset Voltage Logic Input Voltage (HIN, LIN & SD) VB VS VHO VCC VLO VDD VSS VIN –0.3 VB–25 VS–0.3 –0.3 –0.3 –0.3 VCC–25 VSS–0.3 625 VB+0.3 VB+0.3 25 VCC+0.3 VSS+25 VCC+0.3 VDD+0.3 VDC Allowable Offset Supply Voltage Transient dVS/dt – 50 V/ns *Package Power Dissipation @ TA ≤ +25°C (14 Lead DIP) (16 SOIC–WIDE) PD – – – 1.6 1.25 Watt Thermal Resistance, Junction to Ambient (14 Lead DIP) (16 SOIC–WIDE) RθJA – – 75 100 °C/W Tj, Tstg –55 150 °C TL – 260 °C Operating and Storage Temperature Lead Temperature for Soldering Purposes, 10 seconds RECOMMENDED OPERATING CONDITIONS The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15 V differential. High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage VB VS+10 VS+20 VS Note 1 600 High Side Floating Output Voltage VHO VS VB Low Side Fixed Supply Voltage VCC 10 20 Low Side Output Voltage VLO 0 VCC Logic Supply Voltage VDD VSS+5 VSS+20 Logic Supply Offset Voltage VSS –5 5 Logic Input Voltage (HIN, LIN & SD) VIN VSS VDD TA Note 1: Logic operational for VS of –5 to +600 V. Logic state held for VS of –5 V to –VBS. –40 125 Ambient Temperature 2 V °C Motorola TMOS Power MOSFET Transistor Device Data MPIC2113 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Characteristic Min Typ Max Unit STATIC ELECTRICAL CHARACTERISTICS – SUPPLY CHARACTERISTICS VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM or VSS and are applicable to the respective output leads: HO or LO. Logic “1” Input Voltage VIH 9.5 – – Logic “0” Input Voltage VIL – – 6.0 High Level Output Voltage, VBIAS–VO @ VIN = VIH, IO = 0 A VOH – – 1.2 Low Level Output Voltage, VO @ VIN = VIL, IO = 0 A VOL – – 0.1 Offset Supply Leakage Current @ VB = VS = 600 V ILK – – 50 Quiescent VBS Supply Current @ VIN = 0 V or VDD IQBS – 125 230 Quiescent VCC Supply Current @ VIN = 0 V or VDD IQCC – 180 340 Quiescent VDD Supply Current @ VIN = 0 V or VDD IQDD – 15 30 Logic “1” Input Bias Current @ VIN = 15 V IIN+ – 20 40 Logic “0” Input Bias Current @ VIN = 0 V IIN– – – 1.0 VBS Supply Undervoltage Positive Going Threshold VBSUV+ 7.5 – 9.7 VBS Supply Undervoltage Negative Going Threshold VBSUV– 7.0 – 9.4 VCC Supply Undervoltage Positive Going Threshold VCCUV+ 7.4 – 9.6 VCC Supply Undervoltage Negative Going Threshold VCCUV– 7.0 – 9.4 Output High Short Circuit Pulsed Current @ VOUT = 0 V, VIN = 15 V, PW ≤10 µs IO+ 2.0 2.5 – Output Low Short Circuit Pulsed Current @ VOUT = 15 V, VIN = 0 V, PW ≤ 10 µs IO– 2.0 2.5 – V µA V A DYNAMIC ELECTRICAL CHARACTERISTICS VBIAS (VCC, VBS, VDD) = 15 V and VSS = COM unless otherwise specified. TA = 25°C. Turn–On Propagation Delay @ VS = 0 V ton – 120 150 Turn–Off Propagation Delay @ VS = 600 V toff – 94 125 Shutdown Propagation Delay @ VS = 600 V tsd – 110 140 tr – 25 35 tf – 17 25 MT – – 10 Turn–On Rise Time @ CL = 1000 pF Turn–Off Fall Time @ CL = 1000 pF Delay Matching, HS & LS Turn–On/Off ns TYPICAL CONNECTION 10 TO 600 V VDD HIN VDD HIN SD SD LIN LIN VSS VCC VSS HO VB VS TO LOAD VCC COM LO Motorola TMOS Power MOSFET Transistor Device Data 3 MPIC2113 LEAD DEFINITIONS Symbol Lead Description VDD Logic Supply HIN Logic Input for High Side Gate Driver Output (HO), In Phase SD Logic Input for Shutdown LIN Logic Input for Low Side Gate Driver Output (LO), In Phase VSS Logic Ground VB High Side Floating Supply HO High Side Gate Drive Output VS High Side Floating Supply Return VCC Low Side Supply LO Low Side Gate Drive Output COM Low Side Return HIN LIN 50% HIN LIN 50% tr ton SD 90% HO LO 50% SD 50% LO tsd HO LO 10% Figure 2. Switching Time Waveform Definitions HIN LIN 50% 90% 10% HO LO Figure 1. Input / Output Timing Diagram tf toff HO 10% 90% MT MT 90% LO Figure 3. Shutdown Waveform Definitions 4 HO Figure 4. Delay Matching Waveform Definitions Motorola TMOS Power MOSFET Transistor Device Data MPIC2113 PACKAGE DIMENSIONS 14 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. 8 B 1 7 A F DIM A B C D F G H J K L M N L C J N H G SEATING PLANE D K M INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01 CASE 646–06 ISSUE L –A– 16 9 –B– 8X P 0.010 (0.25) 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. M B M 8 16X J D 0.010 (0.25) M T A S B S F R X 45 _ C –T– 14X G K SEATING PLANE M CASE 751G–02 ISSUE A Motorola TMOS Power MOSFET Transistor Device Data DIM A B C D F G J K M P R MILLIMETERS MIN MAX 10.15 10.45 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.400 0.411 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0.415 0.010 0.029 5 MPIC2113 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *MPIC2113/D* MPIC2113/D Motorola TMOS Power MOSFET Transistor Device Data