IRF IRHF57034 Simple drive requirement Datasheet

PD-93791D
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
5
Product Summary
Part Number
IRHF57034
IRHF53034
Radiation Level RDS(on)
100K Rads (Si)
0.048Ω
300K Rads (Si)
0.048Ω
ID
QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
500K Rads (Si)
0.048Ω
12A* JANSG2N7492T2
IRHF58034 1000K Rads (Si)
0.060Ω
12A* JANSH2N7492T2
IRHF54034
TECHNOLOGY
™
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
9.5
48
25
0.2
±20
270
12
2.5
9.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
10/19/11
IRHF57034, JANSR2N7492T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Min
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
60
—
—
V
—
0.062
—
V/°C
—
—
0.048
Ω
VGS = 12V, ID = 9.5A Ã
2.0
12
—
—
—
—
—
—
4.0
—
10
25
V
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
40
10
15
25
100
35
30
—
nC
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 9.5A Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = 30V
ns
VDD = 30V, ID = 12A
VGS =12V, RG = 7.5Ω
µA
nA
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1160
530
18
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
12*
48
1.5
100
300
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 12A, VGS = 0V Ã
Tj = 25°C, IF = 12A, di/dt ≤100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
5.0
175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHF57034, JANSR2N7492T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-39)
Diode Forward Voltage Ã
Test Conditions
60
2.0
—
—
—
—
—
4.0
100
-100
10
0.034
60
1.5
—
—
—
—
—
4.0
100
-100
25
0.043
nA
µA
Ω
V GS = 0V, I D = 1.0mA
V GS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 48V, VGS =0V
VGS = 12V, ID = 9.5A
—
0.048
—
0.060
Ω
VGS = 12V, ID = 9.5A
—
1.5
1.5
V
VGS = 0V, IS = 12A
—
V
1. Part numbers IRHF57034 (JANSR2N7492T2), IRHF53034 (JANSF2N7492T2) and IRHF54034 (JANSG2N7492T2)
2. Part number IRHF58034 (JANSH2N7492T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV)
(µm)
2
(MeV/(mg/cm ))
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
300 ± 7.5%
38 ± 7.5%
60
60
60
60
30
61 ± 5%
330 ± 7.5%
31 ± 10%
46
46
35
25
15
84 ± 5%
350 ± 10%
28 ± 7.5%
35
30
25
20
14
Bias VDS (V)
38 ± 5%
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57034, JANSR2N7492T2
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
100
10
5.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
5.0V
1
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15
25V
20µs PULSE WIDTH
9
11
13
15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
7
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 12A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2500
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHF57034, JANSR2N7492T2
1500
Ciss
1000
Coss
500
ID = 12A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
VDS , Drain-to-Source Voltage (V)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
TJ = 25 ° C
0.1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
20
QG , Total Gate Charge (nC)
3.0
OPERATION IN THIS AREA LIMITED BY R (on)
DS
100µs
10
1ms
10ms
1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF57034, JANSR2N7492T2
Pre-Irradiation
16
RD
VDS
LIMITED BY PACKAGE
VGS
12
I D , Drain Current (A)
D.U.T.
RG
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
1
0.10
0.05
PDM
0.02
0.01
0.1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57034, JANSR2N7492T2
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
600
TOP
500
BOTTOM
ID
5.4A
7.6A
12A
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF57034, JANSR2N7492T2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 3.74mH
Peak IL = 12A, VGS = 12V
 ISD ≤ 12A, di/dt ≤ 244A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2011
8
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