To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. HAF2005 Silicon N Channel MOS FET Series Power Switching REJ03G1136-0400 (Previous: ADE-208-688B) Rev.4.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G Gate resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source Gate Shutdown Circuit 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 HAF2005 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Value 60 Unit V VGSS VGSS 16 –2.5 V V ID Note 1 ID (pulse) 40 80 A A IDR Note 2 Pch 40 30 A W Tch Tstg 150 –55 to +150 °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Rev.4.00 Sep 07, 2005 page 2 of 7 Symbol VIH Min 3.5 Typ — Max — Unit V Test Conditions VIL IIH1 — — — — 1.2 100 V µA Vi = 8 V, VDS = 0 IIH2 IIL — — — — 50 1 µA µA Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 IIH (sd) 1 IIH (sd) 2 — — 0.8 0.35 — — mA mA Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Tsd VOP — 3.5 175 — — 12 °C V Channel temperature HAF2005 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 Min 15 Typ — Max — Unit A Test Conditions VGS = 3.5 V, VDS = 2 V ID2 — — 10 — mA V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 Drain to source breakdown voltage V (BR) DSS — 60 Gate to source breakdown voltage V (BR) GSS V (BR) GSS 16 –2.5 — — — — V V IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 IGSS1 IGSS2 — — — — 100 50 µA µA VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 IGSS3 IGSS4 — — — — 1 –100 µA µA VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 Input current (shut down) IGS (op) 1 IGS (op) 2 — — 0.8 0.35 — — mA mA VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — 1.0 — — 10 2.25 µA V VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS (on) RDS (on) — — 25 15 33 20 mΩ mΩ ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Forward transfer admittance Output capacitance |yfs| Coss 8 — 16 940 — — S pF Turn-on delay time td (on) — 10.7 — µs Rise time Turn-off delay time tr td (off) — — 66 15.5 — — µs µs ID = 20 A, VDS = 10 V VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 Ω Fall time Body-drain diode forward voltage tf VDF — — 19 1 — — µs V trr — 200 — ns tos1 — 1 — ms Gate to source leak current Body-drain diode reverse recovery time Over load shut down operation time Note4 Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. Rev.4.00 Sep 07, 2005 page 3 of 7 Note 3 Note 3 IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2005 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) Thermal shut down 200 Operation area 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 50 100 150 Case Temperature 10 50 20 DC 10 5 200 Drain Current 40 µs er at 10 5 10 20 50 100 Tc = –25°C 25°C 30 4V 40 0 50 ID (A) 60 s Typical Transfer Characteristics Drain Current ID (A) 80 = m Drain to Source Voltage VDS (V) Tc (°C) Pulse Test 8V 6V 5V 10 V Op 1 m s Operation in ion (T this area is c= 2 limited by RDS (on) 25 °C 1 ) Typical Output Characteristics 100 PW 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 0 10 µs 100 VGS = 3.5 V 20 75°C 20 10 VDS = 10 V Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 ID = 20 A 0.3 0.2 10 A 0.1 5A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 4 of 7 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 50 VGS = 4 V 20 10 V 10 5 2 Pulse Test 1 1 2 5 10 20 Drain Current 50 100 200 ID (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 5 A, 10 A ID = 20 A 0.04 VGS = 4 V ID = 20 A 0.02 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF2005 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 75°C 5 2 1 0.5 Tc (°C) 500 500 Switching Time t (ns) Reverse Recovery Time trr (ns) 1000 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 50 20 VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % 200 100 tr 50 tf 20 td(off) td(on) 10 0.5 50 IDR (A) 1 2 5 10 Drain Current 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 40 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 1 VGS = 5 V 30 0V 20 10 3000 1000 Coss 300 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.4.00 Sep 07, 2005 page 5 of 7 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2005 Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 VDD = 9 V 8 6 16 V 4 2 0 0.1 1 10 100 200 180 160 140 120 ID = 5 A 100 0 2 4 6 8 Gate to Source Voltage Shutdown Time of Load-Short Test PW (S) 10 VGS (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 0.1 θch – c = 4.17°C/W, Tc = 25°C 0.05 0.03 D= PDM 0.02 0.01 1 sh p ot 0.01 10 µ uls e PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 6 of 7 10% tr 90% td(off) tf HAF2005 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.45 ± 0.3 2.5 14.0 ± 1.0 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 5.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container HAF2005-90 Max: 50 pcs/sack Sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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