LRC LMBTA44LT1G Npn epitaxial planar transistor high breakdown voltage: vceo=400 Datasheet

LESHAN RADIO COMPANY, LTD.
LMBTA44LT1G
LMBTA44LT1G
NPN EPITAXIAL PLANAR TRANSISTOR
3
We declare that the material of product
compliance with RoHS requirements.
1
2
Description
SOT– 23
The LMBTA44LT1G is designed for application
that requires high voltage.
COLLECTOR
3
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
• Complementary to LMBTA94LT1G
1
BASE
DEVICE MARKING
2
EMITTER
LMBTA44LT1G = 3D
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 400 V
VCEO Collector to Emitter Voltage ................................................................................... 400 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 200 mA
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Test
unless otherwise specified)
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=400V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=350V
5
µA
Emitter cut-off current
IEBO
VEB= 4V, IC=0
0.1
µA
HFE(1)
VCE=10V, IC=10 mA
80
HFE(2)
VCE=10V, IC=1mA
50
HFE(3)
VCE=10V, IC=50 mA
40
VCE(sat)
IC=10 mA, IB=1mA
0.2
V
VCE(sat)
IC=50 mA, IB=5mA
0.3
V
VBE(sat)
IC=10 mA, IB= 1 mA
0.9
V
fT
VCE=10V, IC=20mA
DC current gain
300
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition
frequency
50
MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBTA44LT1G
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
VCE(sat) @ IC=10IB
o
Saturation Voltage (mV)
125 C
100
o
o
25 C
hFE
75 C
hFE @ VCE=10V
10
1
o
125 C
o
75 C
100
o
25 C
10
1
10
100
1000
0.1
Collector Current-IC (mA)
1
10
100
1000
Collector Current-IC (mA)
Saturation Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
1000
100
o
Saturation Voltage (mV)
25 C
Capacitance (pF)
o
75 C
o
125 C
VBE(sat) @ IC=10IB
10
Cob
100
0.1
1
10
Collector Current-IC (mA)
100
1000
1
0.1
1
10
100
Reverse-Biased Voltage (V)
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBTA44LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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