CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerHEMT process, 0.15µm gate length, via hole through the substrate. UMS A3667A YYWWG Vd RFin RFout It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package. S Parameters versus frequency Gain & Input / Output return loss (dB) Main Features ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @2.7dB noise figure ■ 20dBm Output power@1dB compression ■ DC power consumption, 175 mA @4.2V ■ 24L-QFN4X4 SMD package ■ ESD protected 25 S21 20 15 10 5 0 -5 -10 S11 -15 S22 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Freq ( GHz) Main Characteristics Tamb. = 25°C, Vd = 4.2V Symbol Fop Parameter Min Input frequency range Typ 7 Max Unit 20 GHz G Small signal gain 23 dB NF Noise Figure 2.7 dB Output power at 1dB gain compression 20 dBm Bias current 175 mA P-1dB Id ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions Ref: DSCHA3667aQDG7296 - 23 Oct 07 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-20GHz Amplifier CHA3667aQDG Electrical Characteristics Tamb. = 25°C, Vd = 4.2V Symbol Fop G NF RLin RLout IP3 Parameter Min Operating frequency range Typ 7 Gain Max Unit 20 GHz dB (7-8GHz) 20 (8-19GHz) 23 (19-20GHz) 20 Noise figure (7-18 GHz) 2.7 dB -10(1) dB Output Return Loss -10 dB Output IP3 28 dBm ( 7-13 GHz) 20 dBm (13-20 GHz) 21 dBm Input Return Loss Pout at 1dB gain compression: P-1dB Isol Reverse isolation 40 dB Vd Drain bias voltage 4.2 V Id Drain bias current 175 mA (1) Rlin<-6dB from 19.5GHz to 20 GHz Ref.:DSCHA3667aQDG7296 - 23 Oct 07 2/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5V V Id Power supply quiescent current 240 mA 3 dBm -40 to +85 °C 175 °C -55 to +125 °C Pin RF input power (2) Top Operating temperature range Tj Tstg Junction temperature (3) Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration<1s (3) Thermal Resistance channel to ground paddle =101.1°C/W for Tamb. = +85°C Vd=4.2V & id=175mA Ref: DSCHA3667aQDG7296 - 23 Oct 07 3/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 /Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Measured Performance: Tamb = +25°C, Vd= +4.2V Id = 175mA S parameters versus Frequency Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B . Gain & Input/Output Return Loss (dB) 28 24 20 S21 S21 16 12 8 4 0 -4 S11 -8 -12 -16 S22 -20 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Noise Figure versus Frequency Result in the package access planes 10 9 8 NF( dB) 7 6 5 4 3 2 1 0 5 7 9 11 13 15 17 19 21 Frequency ( GHz) Ref.:DSCHA3667aQDG7296 - 23 Oct 07 4/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 300 280 260 240 220 200 180 160 140 120 100 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz) Output IP3 versus Single Output Power 40 Vd=4.2V 38 36 Output IP3 ( dBm) 34 32 30 28 26 IP3 (7GHz & +25°C) IP3 (8GHz & +25°C) IP3 (10GHz & +25°C) IP3 (14GHz & +25°C) IP3 (18GHz & +25°C) IP3 (20GHz & +25°C) 24 22 20 18 16 2 4 6 8 10 12 14 16 18 Single output power (dBm) Ref: DSCHA3667aQDG7296 - 23 Oct 07 5/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 /Specifications subject to change without notice Consumption for P-1dB ( mA) P-1dB (dBm) Ouput Power & associated Consumption Id @ 1dB compression 7-20GHz Amplifier CHA3667aQDG Typical Measured Performance in temperature: ( -40°C to 85°C) Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B . Linear Gain versus Frequency and Temperature 29 -40°C 27 25 +25 °C Gain (dB) 23 21 19 +85 °C 17 15 13 11 9 7 5 5 7 9 11 13 15 17 19 21 Frequency (GHz) Reverse Isolation(dB) Reverse isolation versus Frequency and Temperature 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -40°C +85 °C +25 °C 5 7 9 11 13 15 17 19 21 Frequency (GHz) Ref.:DSCHA3667aQDG7296 - 23 Oct 07 6/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG NF( dB) Noise Figure versus Frequency and Temperature 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 85 °C 25 °C -40 °C 5 7 9 11 13 15 17 19 21 Frequency ( GHz) Consumption (Id) versus Temperature 185 Consumption Id (mA) 180 175 170 165 160 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Temperature (°C) Ref: DSCHA3667aQDG7296 - 23 Oct 07 7/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 /Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Gain and Pout versus Frequency and Temperature @ 7 GHz +25°C -40°C +85°C Gain and Pout versus Frequency and Temperature @ 16 GHz -40°C +25°C +85°C °C Gain and Pout versus Frequency and Temperature @ 20 GHz Pout @1dBc versus Frequency and Temperature -40°C 24 +25°C -40°C +25°C Pout @ 1dBc (dBm) 22 +85°C 20 +85°C 18 C 16 14 12 10 7 9 11 13 15 17 19 Freq ( GHz) Ref.:DSCHA3667aQDG7296 - 23 Oct 07 8/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Vd= +4.2V Output IP3 (dBm) Output IP3 versus Single Output Power and Temperature @ 7 GHz 40 38 36 34 32 30 28 26 24 22 20 18 16 IP3 (7GHz & +25°C) IP3 (7GHz & +85°C) IP3 (7GHz & -40°C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) Output IP3 versus Single Output Power and Temperature @ 10 GHz 40 38 36 34 32 30 28 26 24 22 20 18 16 IP3 (10GHz & +25°C) IP3 (10GHz & +85°C) IP3 (10GHz & -40°C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) Output IP3 versus Single Output Power and Temperature @ 20 GHz 40 38 36 34 32 30 28 26 24 22 20 18 16 IP3 (20GHz & +25°C) IP3 (20GHz &+ 85°C) IP3 (20GHz & -40°C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Ref: DSCHA3667aQDG7296 - 23 Oct 07 9/14 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 /Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Typical Package Sij parameters Tamb = +25°C, Vd= 4.2V, Typical Id=175mA Refer to the “definition of the Sij reference planes” section below Definition of the Sij reference planes The reference planes are defined from the footprint of the recommended characterization board shown below under the number 96402. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij incorporates this land pattern. Ref.:DSCHA3667aQDG7296 - 23 Oct 07 10/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Recommended footprint for 24L QFN4X4 Unit :mm Via hole ø0.3 0.7 0.23 0.45 0.42 0.37 0.7 0.2 Taper QFN PIN SMD mounting procedure The SMD Leadess package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB ( motherboard) are given in the drawing above. For the mounting process standard techniques, involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Ref: DSCHA3667aQDG7296 - 23 Oct 07 11/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Proposed Assembly board “96270” for the 24L-QFN4x4 products characterization. Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Gnd Gn Vd d Vd - Capacitor 10nF ±10% Condensator 10nF ±10% Gnd Gn d Ref.:DSCHA3667aQDG7296 - 23 Oct 07 12/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Package outline: Ref: DSCHA3667aQDG7296 - 23 Oct 07 13/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 7-20GHz Amplifier CHA3667aQDG Note Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd RFin RFout Ordering Information QFN 4x4 RoHS compliant package: Stick: XY=20 Tape & reel: XY=21 CHA3667aQDG/XY Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref.:DSCHA3667aQDG7296 - 23 Oct 07 14/14 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice