SMD Switching Diode CDSV3-19-G/20-G/21-G High Speed RoHS Device Features SOT-323 -Fast switching diode. 0.087(2.20) 0.070(1.80) -Surface mount package ideally for automatic insertion. 3 0.054(1.35) 0.045(1.15) -For general purpose switching applications. 1 -High conductance. 2 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) Mechanical data -Case: SOT-323 0.087(2.20) 0.078(2.00) 0.044(1.10) 0.035(0.90) -Terminals: Solder plated, solderable per MILSTD-750, Method 2026. -Marking: CDSV3-19-G KA8 CDSV3-20-G KT2 CDSV3-21-G KT3 0.004(0.10)max. 0.016(0.40) 0.008(0.20) 0.004(0.10)min. Dimensions in inches and (millimeters) Maximum Rating (at Ta=25°C unless otherwise noted) Symbol Value Unit Power dissipation PD 200 mW Forward current IF 200 mA VR 120 150 200 V TJ , TSTG -55 ~ +150 Parameter Reverse voltage CDSV3-19-G CDSV3-20-G CDSV3-21-G Junction and storage temperature O C Electrical Characteristics (at Ta=25°C unless otherwise noted) Symbol Parameter Test Conditions Min Max 100 150 200 Unit Reverse breakdown voltage CDSV3-19-G CDSV3-20-G CDSV3-21-G V(BR)R IR=100uA Reverse leakage current CDSV3-19-G CDSV3-20-G CDSV3-21-G IR VR=100V VR=150V VR=200V 0.1 UA Forward voltage VF IF=100mA IF=200mA 1 1.25 V Diode capacitance CD VR=0V, f=1MHZ 5 pF Reverse recovery time trr IF=IR=30mA, Irr=0.1XIR 50 nS V REV:A QW-B0025 Page 1 SMD Switching Diode Characteristic Curves (CDSV3-19-G/20-G/21-G) Fig.1 - Forward Characteristics Fig.2 - Leakage Current vs Junction Temperature 1000 100 O IR, Leakage Current (uA) IF, Forward Current (mA) TJ=25 C 100 10 1 0.1 0.01 10 1 0.1 0.01 0 1 VF, Forward Voltage (V) 2 0 100 TJ, Junction Temperature (°C) 200 REV:A QW-B0025 Page 2