ACE ACE1543B P-channel enhancement mode field effect transistor Datasheet

ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features





VDS(V) =-30V
ID=-4.5A
RDS(ON)=68mΩ @ VGS=-10V
RDS(ON)=83mΩ @ VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current * AC
TA=25℃
TA=70℃
Pulsed Drain Current * B
Power Dissipation
TA=25℃
ID
-4.5
-3.6
IDM
-20
PD
2
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
A
A
W
O
C
Packaging Type
SOT-223
VER 1.2
1
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE1543B XX + H
Halogen - free
Pb - free
XM : SOT-223
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS=0V, ID=-250 uA
-30
-34
VGS(th)
VDS=VGS, IDS=-250uA
-1
-1.4
Gate Leakage Current
Zero Gate Voltage Drain
Current
IGSS
VDS=0V,VGS=±20V
100
nA
IDSS
VDS=-30V, VGS=0V
-1
uA
Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
V
-3
VGS=-10V, ID=-6A
48
68
VGS=-4.5V, ID=-4A
63
83
gfs
VDS=-5V,ID=-6A
12
S
VSD
ISD=-1A, VGS=0V
-0.81
V
mΩ
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
td(on)
Turn-Off Time
td(off)
VDS=-15V, VGS=-10V, ID=-4.9A
VGS=-10V, RGEN=6Ω, VDS=-15V,
RL=15Ω
18.3
23.8
2.4
3.2
3.1
4.1
12.4
24.8
41.1
82.2
nC
nS
Dynamic
Input Capacitance
Ciss
Output Capacitance
REVERSE Transfer
Capacitance
Coss
971.5
VGS=0V, VDS=-15V, f=1MHz
Crss
235.1
pF
82.7
Note:
2
1. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-223
Units: mm
VER 1.2
4
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5
Similar pages