Sample & Buy Product Folder Support & Community Tools & Software Technical Documents bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 bq241xx Synchronous Switched-Mode, Li-Ion and Li-Polymer Charge-Management IC With Integrated Power FETs (bqSWITCHER™) 1 Features 2 Applications • • • • • 1 • • • • • • • • • • • • • • • Ideal For Highly Efficient Charger Designs For Single-, Two-, or Three-Cell Li-Ion and Li-Polymer Battery Packs bq24105 Also for LiFePO4 Battery (see Using bq24105 to Charge the LiFePO4 Battery) Integrated Synchronous Fixed-Frequency PWM Controller Operating at 1.1 MHz With 0% to 100% Duty Cycle Integrated Power FETs for Up To 2-A Charge Rate High-Accuracy Voltage and Current Regulation Available in Both Stand-Alone (Built-In Charge Management and Control) and System-Controlled (Under System Command) Versions Status Outputs for LED or Host Processor Interface Indicates Charge-In-Progress, Charge Completion, Fault, and AC-Adapter Present Conditions 20-V Maximum Voltage Rating on IN and OUT Pins High-Side Battery Current Sensing Battery Temperature Monitoring Automatic Sleep Mode for Low Power Consumption System-Controlled Version Can Be Used in NiMH and NiCd Applications Reverse Leakage Protection Prevents Battery Drainage Thermal Shutdown and Protection Built-In Battery Detection Available in 20-Pin, 3.50 mm × 4.50 mm VQFN Package Handheld Products Portable Media Players Industrial and Medical Equipment Portable Equipment 3 Description The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management devices targeted at a wide range of portable applications. The bqSWITCHER™ series offers integrated synchronous PWM controller and power FETs, high-accuracy current and voltage regulation, charge preconditioning, charge status, and charge termination, in a small, thermally enhanced VQFN package. The system-controlled version provides additional inputs for full charge management under system control. The bqSWITCHER™ charges the battery in three phases: conditioning, constant current, and constant voltage. Charge is terminated based on userselectable minimum current level. A programmable charge timer provides a safety backup for charge termination. The bqSWITCHER™ automatically restarts the charge cycle if the battery voltage falls below an internal threshold. The bqSWITCHER™ automatically enters sleep mode when VCC supply is removed. Device Information PART NUMBER bq241xx PACKAGE VQFN (20) (1) BODY SIZE (NOM) 3.50 mm × 4.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical 1-Cell Application LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH D1 PGND 17 COUT 0.1W 10 mF Battery Pack Pack+ Pack- MMBZ18VALT1 103AT 2 STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 13 NC 0.1 mF 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Options....................................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 1 1 1 2 4 5 6 Absolute Maximum Ratings ..................................... 6 ESD Ratings.............................................................. 6 Recommended Operating Conditions....................... 7 Thermal Information .................................................. 7 Electrical Characteristics........................................... 7 Dissipation Ratings ................................................. 10 Typical Characteristics ............................................ 10 Detailed Description ............................................ 11 8.1 8.2 8.3 8.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 11 12 13 22 9 Application and Implementation ........................ 24 9.1 Application Information............................................ 24 9.2 Typical Application ................................................. 24 9.3 System Examples ................................................... 28 10 Power Supply Recommendations ..................... 32 11 Layout................................................................... 32 11.1 Layout Guidelines ................................................. 32 11.2 Layout Example .................................................... 34 11.3 Thermal Considerations ........................................ 34 12 Device and Documentation Support ................. 35 12.1 12.2 12.3 12.4 12.5 12.6 12.7 Device Support...................................................... Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 35 35 35 35 35 36 36 13 Mechanical, Packaging, and Orderable Information ........................................................... 36 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision O (March 2010) to Revision P • Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................................................................................................. 1 Changes from Revision M (August 2008) to Revision N Page • Added part number bq24104.................................................................................................................................................. 1 • Added part number bq24104 to the Ordering Information ..................................................................................................... 4 • Deleted Product Preview from bq24104RHLR ....................................................................................................................... 4 • Deleted Product Preview from bq24104RHLT ....................................................................................................................... 4 • Added bq24104 to the Terminal Functions table.................................................................................................................... 5 • Added part number bq24104 to the Deglitch time.................................................................................................................. 8 • Added bq24104 to Table 2. .................................................................................................................................................. 16 • Added part number bq24104 to Figure 16 .......................................................................................................................... 28 Changes from Revision L (December 2007) to Revision M Page • Changed specifications and symbols for (cold, hot, and cutoff) temperature thresholds....................................................... 8 • Changed equation definitions ............................................................................................................................................... 13 • Changed equation definitions ............................................................................................................................................... 27 Changes from Revision K (November 2007) to Revision L Page • Changed Added figure almost identical to Figure 3. Changed RISET2 to 20 kohms. ......................................................... 31 • Added Changed resistor bridge values 301 to 143, 100 to 200 Kohms............................................................................... 31 2 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Changes from Revision J (October 2007) to Revision K Page • Changed From: CIU To: CDY................................................................................................................................................. 4 • Added bq24109 to VOREG ....................................................................................................................................................... 7 • Added part number bq24109 to VLOWV .................................................................................................................................. 8 • Changed Deglitch time for temperature fault, TS, bq24109 typical value From: 1000 To: 500 ............................................. 8 • Changed From: Single-cell or two-cell To: one-, two-, or three-cell applications. Deleted text............................................ 13 Changes from Revision I (August 2007) to Revision J Page • Added part number bq24109 ................................................................................................................................................. 1 • Added part number bq24109 to the Ordering Information ..................................................................................................... 4 • Added bq24109 to the Terminal Functions table.................................................................................................................... 5 • Added part number bq24109 to the Deglitch time.................................................................................................................. 8 • Added bq24109 to Table 2. .................................................................................................................................................. 16 Changes from Revision H (July 2007) to Revision I Page • Added part number bq24103A .............................................................................................................................................. 1 • Changed device size From: 5,5 mm x 3.5 mm To: 4,5 mm x 3.5 mm ................................................................................... 1 • Added part number bq24103A to the Ordering Information ................................................................................................... 4 • Added bq24103A to the Terminal Functions table. ................................................................................................................ 5 • Added part numbers bq24103Ana d bq24113A to VOREG ..................................................................................................... 7 • Added part number bq24103A to VLOWV ................................................................................................................................ 8 • Added part number bq24103A to Figure 16 ........................................................................................................................ 28 Changes from Revision G (June 2007) to Revision H Page • Changed Figure 1 ................................................................................................................................................................ 10 • Changed Figure 2 ................................................................................................................................................................ 10 • Added D1 to diode MMBZ18VALT1 in Figure 13................................................................................................................. 24 • Added D1 to diode MMBZ18VALT1 in Figure 16 ................................................................................................................ 28 • Added D1 to diode MMBZ18VALT1 in Figure 17 ................................................................................................................ 29 • Added D1 to diode MMBZ18VALT1 and Note A to Figure 18. ............................................................................................ 29 Changes from Revision F (January 2007) to Revision G Page • Added bq24113A to the data sheet and the Ordering Information......................................................................................... 4 • Added bq24113A to the Terminal Functions table. ................................................................................................................ 5 • Changed bq24113A added to Figure 18 ............................................................................................................................. 29 Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 3 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 5 Device Options (1) (2) (3) 4 CHARGE REGULATION VOLTAGE (V) INTENDED APPLICATION PART NUMBER (1) (2) (3) 4.2 V Stand-alone bq24100 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone bq24103 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone bq24103A 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) (Blinking status pins) Stand-alone bq24104 Externally programmable (2.1 V to 15.5 V) Stand-alone bq24105 4.2 V (Blinking status pins) Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled bq24113 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled bq24113A Externally programmable (2.1 V to 15.5 V) System-controlled bq24115 bq24108 bq24109 The RHL package is available in the following options: T – taped and reeled in quantities of 250 devices per reel R – taped and reeled in quantities of 3000 devices per reel This product is RoHS-compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for use in specified lead-free soldering processes. TJ = –40°C to 125°C Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 6 Pin Configuration and Functions OUT OUT RHL Package 20-Pin VQFN Top View 1 2 20 19 3 18 4 17 5 16 6 15 7 14 8 13 9 10 STAT2 or NC PGND PGND CE SNS BAT CELLS or FB or NC TS VTSB 11 12 VSS STAT1 IN IN PG VCC TTC or CMODE ISET1 ISET2 bq24100, 03, 03A, 04, 05, 08, 09, 13, 13A, 15 Pin Functions PIN bq24100, bq24108, bq24109 bq24103, bq24103A bq24104 bq24105 bq24113, bq24113A bq24115 BAT 14 14 14 14 14 I Battery voltage sense input. Bypass it with a 0.1 μF capacitor to PGND if there are long inductive leads to battery. CE 16 16 16 16 16 I Charger enable input. This active low input, if set high, suspends charge and places the device in the low-power sleep mode. Do not pull up this input to VTSB. I Available on parts with fixed output voltage. Ground or float for single-cell operation (4.2 V). For two-cell operation (8.4 V) pull up this pin with a resistor to VCC. 7 I Charge mode selection: low for precharge as set by ISET2 pin and high (pull up to VTSB or <7 V) for fast charge as set by ISET1. 13 I Output voltage analog feedback adjustment. Connect the output of a resistive voltage divider powered from the battery terminals to this node to adjust the output battery voltage regulation. Charger input voltage. NAME CELLS 13 13 CMODE 7 FB IN ISET1 13 I/O DESCRIPTION 3, 4 3, 4 3, 4 3, 4 3, 4 I 8 8 8 8 8 I/O Charger current set point 1 (fast charge). Use a resistor to ground to set this value. I/O Charge current set point 2 (precharge and termination), set by a resistor connected to ground. A low-level CMODE signal selects the ISET2 charge rate, but if the battery voltage reaches the regulation set point, bqSWITCHER™ changes to voltage regulation regardless of CMODE input. ISET2 9 9 9 N/C 13 19 19 - No connection. This pin must be left floating in the application. 1 1 O 20 20 20 O Charge current output inductor connection. Connect a zener TVS diode between OUT pin and PGND pin to clamp the voltage spike to protect the power MOSFETs during abnormal conditions. 5 5 5 5 O 17,18 17,18 17,18 17,18 17, 18 SNS 15 15 15 15 15 I Charge current-sense input. Battery current is sensed via the voltage drop developed on this pin by an external sense resistor in series with the battery pack. A 0.1-μF capacitor to PGND is required. STAT1 2 2 2 2 2 O Charge status 1 (open-drain output). When the transistor turns on indicates charge in process. When it is off and with the condition of STAT2 indicates various charger conditions (See Table 1) OUT PG PGND 9 9 1 1 1 20 20 5 Copyright © 2004–2015, Texas Instruments Incorporated Power-good status output (open drain). The transistor turns on when a valid VCC is detected. It is turned off in the sleep mode. PG can be used to drive a LED or communicate with a host processor. Power ground input Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 5 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Pin Functions (continued) PIN NAME bq24100, bq24108, bq24109 bq24103, bq24103A bq24104 bq24105 STAT2 19 19 19 TS 12 12 12 TTC 7 7 7 bq24113, bq24113A 12 bq24115 12 VCC 6 6 6 6 6 VSS 10 10 10 10 10 VTSB 11 11 11 11 11 Exposed Thermal Pad Pad Pad Pad Pad I/O DESCRIPTION O Charge status 2 (open-drain output). When the transistor turns on indicates charge is done. When it is off and with the condition of STAT1 indicates various charger conditions (See Table 1) I Temperature sense input. This input monitors its voltage against an internal threshold to determine if charging is allowed. Use an NTC thermistor and a voltage divider powered from VTSB to develop this voltage. (See Figure 4) I Timer and termination control. Connect a capacitor from this node to GND to set the bqSWITCHER™ timer. When this input is low, the timer and termination detection are disabled. I Analog device input. A 0.1 μF capacitor to VSS is required. Analog ground input O Pad TS internal bias regulator voltage. Connect capacitor (with a value between a 0.1-μF and 1-μF) between this output and VSS. There is an internal electrical connection between the exposed thermal pad and VSS. The exposed thermal pad must be connected to the same potential as the VSS pin on the printed circuit board. The power pad can be used as a star ground connection between VSS and PGND. A common ground plane may be used. VSS pin must be connected to ground at all times. 7 Specifications 7.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN Supply voltage (with respect to VSS) Input voltage (with respect to VSS and PGND) IN, VCC MAX UNIT 20 V STAT1, STAT2, PG, CE, CELLS, SNS, BAT –0.3 20 V OUT –0.7 20 V 7 V VTSB 3.6 V ISET1, ISET2 3.3 V ±1 V mA CMODE, TS, TTC Voltage difference between SNS and BAT inputs (VSNS – VBAT) Output sink STAT1, STAT2, PG 10 Output current (average) OUT 2.2 A Operating free-air temperature, TA –40 85 °C Junction temperature, TJ –40 125 °C 300 °C 150 °C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds Storage temperature, Tstg (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) (1) (2) 6 (1) UNIT ±2000 ±500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 7.3 Recommended Operating Conditions MIN Supply voltage, VCC and IN (Tie together) 4.35 Operating junction temperature range, TJ (1) (2) NOM (1) MAX 16 –40 UNIT (2) V 125 °C The IC continues to operate below Vmin, to 3.5 V, but the specifications are not tested and not specified. The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the IN or OUT pins. A tight layout minimizes switching noise. 7.4 Thermal Information bq241xx THERMAL METRIC (1) RHL (VQFN) UNIT 20 PINS RθJA Junction-to-ambient thermal resistance 39.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 39.3 °C/W RθJB Junction-to-board thermal resistance 15.8 °C/W ψJT Junction-to-top characterization parameter 0.6 °C/W ψJB Junction-to-board characterization parameter 15.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 3.6 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS VCC > VCC(min), PWM switching I(VCC) I(SLP) VCC supply current Battery discharge sleep current, (SNS, BAT, OUT, FB pins) 10 VCC > VCC(min), PWM NOT switching 5 VCC > VCC(min), CE = HIGH 315 0°C ≤ TJ ≤ 65°C, VI(BAT) = 4.2 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 3.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 8.4 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 5.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 12.6 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 7.7 mA μA μA VOLTAGE REGULATION VOREG VIBAT CELLS = Low, in voltage regulation 4.2 CELLS = High, in voltage regulation 8.4 Output voltage, bq24100/08/09 Operating in voltage regulation 4.2 Feedback regulation REF for bq24105/15 only (W/FB) IIBAT = 25 nA typical into pin 2.1 Output voltage, bq24103/03A/04/13/13A Voltage regulation accuracy TA = 25°C V V –0.5% 0.5% –1% 1% 150 2000 –10% 10% CURRENT REGULATION - FAST CHARGE IOCHARGE Output current range of converter VLOWV ≤ VI(BAT) < VOREG, V(VCC) - VI(BAT) > V(DO-MAX) mA 100 mV ≤ VIREG≤ 200 mV, V VIREG Voltage regulated across R(SNS) Accuracy V(ISET1) Output current set voltage Copyright © 2004–2015, Texas Instruments Incorporated IREG + 1V RSET1 1000, Programmed Where 5 kΩ ≤ RSET1 ≤ 10 kΩ, Select RSET1 to program VIREG, VIREG(measured) = IOCHARGE + RSNS (–10% to 10% excludes errors due to RSET1 and R(SNS) tolerances) V(LOWV) ≤ VI(BAT) ≤ VO(REG), V(VCC) ≤ VI(BAT) × V(DO-MAX) 1 Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 V 7 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER K(ISET1) Output current set factor TEST CONDITIONS MIN VLOWV ≤ VI(BAT) < VO(REG) , V(VCC) ≤ VI(BAT) + V(DO-MAX) TYP MAX 1000 UNIT V/A PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION VLOWV Precharge to fast-charge transition voltage threshold, BAT, bq24100/03/03A/04/05/08/09 ICs only t Deglitch time for precharge to fast charge transition, IOPRECHG V(ISET2) K(ISET2) Precharge current set factor 68 71.4 75 %VO(REG) Rising voltage; tRISE, tFALL = 100 ns, 2-mV overdrive 20 30 40 ms Precharge range VI(BAT) < VLOWV, t < tPRECHG 15 200 mA Precharge set voltage, ISET2 VI(BAT) < VLOWV, t < tPRECHG 100 mV 1000 V/A 100 mV ≤ VIREG-PRE ≤ 100 mV, V VIREG-PRE Voltage regulated across RSNS-Accuracy IREG*PRE + 0.1V RSET2 1000, (PGM) Where 1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1 to program VIREG-PRE, VIREG-PRE (Measured) = IOPRE-CHG × RSNS (–20% to 20% excludes errors due to RSET1 and RSNS tolerances) –20% 20% 15 200 CHARGE TERMINATION (CURRENT TAPER) DETECTION ITERM Charge current termination detection range VI(BAT) > VRCH VTERM Charge termination detection set voltage, ISET2 VI(BAT) > VRCH K(ISET2) Termination current set factor tdg-TERM 100 mV 1000 Charger termination accuracy VI(BAT) > VRCH Deglitch time for charge termination Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns –20% mA V/A 20% 20 30 40 ms TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR %LTF Cold temperature threshold, TS, % of bias VLTF = VO(VTSB) × % LTF/100 72.8% 73.5% 74.2% %HTF Hot temperature threshold, TS, % of bias VHTF = VO(VTSB) × % HTF/100 33.7% 34.4% 35.1% %TCO Cutoff temperature threshold, TS, % of bias VTCO = VO(VTSB) × % TCO/100 28.7% 29.3% 29.9% 0.5% 1% 1.5% 20 30 40 LTF hysteresis Deglitch time for temperature fault, TS Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns tdg-TS Deglitch time for temperature fault, TS, bq24109, bq24104 VO(VTSB) TS bias output voltage VCC > VIN(min), I(VTSB) = 10 mA 0.1 μF ≤ CO(VTSB) ≤ 1 μF VO(VTSB) TS bias voltage regulation accuracy VCC > IN(min), I(VTSB) = 10 mA 0.1 μF ≤ CO(VTSB) ≤ 1 μF ms 500 3.15 –10% V 10% BATTERY RECHARGE THRESHOLD VRCH tdg-RCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell Deglitch time VI(BAT) < decreasing below threshold, tFALL = 100 ns 10-mV overdrive 20 30 40 ms STAT1, STAT2, AND PG OUTPUTS VOL(STATx) Low-level output saturation voltage, STATx IO = 5 mA 0.5 VOL(PG) Low-level output saturation voltage, PG IO = 10 mA 0.1 V CE CMODE, CELLS INPUTS VIL Low-level input voltage IIL = 5 μA VIH High-level input voltage IIH = 20 μA 0 0.4 1.3 VCC V TTC INPUT tPRECHG Precharge timer tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) Charge timer accuracy 0.01 μF ≤ C(TTC) ≤ 0.18 μF 8 Submit Documentation Feedback 1440 2160 s 25 1800 572 minutes -10% 10% Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER KTTC Timer multiplier CTTC Charge time capacitor range VTTC_EN TTC enable threshold voltage TEST CONDITIONS MIN TYP MAX 2.6 0.01 V(TTC) rising UNIT min/nF μF 0.22 200 mV SLEEP COMPARATOR VSLP-ENT Sleep-mode entry threshold VSLP-EXIT Sleep-mode exit hysteresis, tdg-SLP Deglitch time for sleep mode 2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells VCC ≤ VIBAT +5 mV VCC ≤ VIBAT +75 mV VI(OUT) = 12.6 V, RIN = 1 kΩ bq24105/15 (1) VCC ≤ VIBAT -4 mV VCC ≤ VIBAT +73 mV 40 160 2.3 V ≤ VI(OUT)≤ VOREG VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, PMOS turns off VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, STATx pins turn off V mV μs 5 20 30 40 3.50 ms UVLO VUVLO-ON IC active threshold voltage VCC rising 3.15 3.30 IC active hysteresis VCC falling 120 150 V mV PWM Internal P-channel MOSFET on-resistance Internal N-channel MOSFET on-resistance fOSC 7 V ≤ VCC ≤ VCC(max) 400 4.5 V ≤ VCC ≤ 7 V 500 7 V ≤ VCC ≤ VCC(max) 130 4.5 V ≤ VCC ≤ 7 V mΩ 150 Oscillator frequency 1.1 Frequency accuracy –9% MHz 9% DMAX Maximum duty cycle DMIN Minimum duty cycle 100% tTOD Switching delay time (turn on) 20 ns tsyncmin Minimum synchronous FET on time 60 ns 0% Synchronous FET minimum current-off threshold (2) 50 400 mA BATTERY DETECTION IDETECT Battery detection current during time-out fault VI(BAT) < VOREG – VRCH IDISCHRG1 Discharge current tDISCHRG1 Discharge time IWAKE Wake current tWAKE Wake time IDISCHRG2 Termination discharge current tDISCHRG2 Termination time 2 mA VSHORT < VI(BAT) < VOREG – VRCH 400 μA VSHORT < VI(BAT) < VOREG – VRCH 1 s VSHORT < VI(BAT) < VOREG – VRCH 2 mA VSHORT < VI(BAT) < VOREG – VRCH 0.5 s Begins after termination detected, VI(BAT) ≤ VOREG 400 μA 262 ms OUTPUT CAPACITOR COUT Required output ceramic capacitor range from SNS to PGND, between inductor and RSNS CSNS Required SNS capacitor (ceramic) at SNS pin 4.7 10 μF 47 μF 0.1 PROTECTION VOVP OVP threshold voltage ILIMIT Cycle-by-cycle current limit VSHORT Short-circuit voltage threshold, BAT (1) (2) Threshold over VOREG to turn off P-channel MOSFET, STAT1, and STAT2 during charge or termination states 110 117 2.6 3.6 4.5 A VI(BAT) falling 1.95 2 2.05 V/cell 121 %VO(REG) For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry. N-channel always turns on for approximately 60 ns and then turns off if current is too low. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 9 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER ISHORT Short-circuit current TSHTDWN Thermal trip TEST CONDITIONS MIN VI(BAT) ≤ VSHORT TYP MAX 35 UNIT 65 Thermal hysteresis mA 165 °C 10 °C 7.6 Dissipation Ratings θJA θJC TA < 40°C POWER RATING DERATING FACTOR ABOVE TA = 40°C 46.87°C/W 2.5°C/W 1.81 W 0.021 W/°C PACKAGE RHL (1) (1) This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is connected to the ground plane by a 2x3 via matrix. 7.7 Typical Characteristics 100 100 VI = 9 V 90 90 VI = 5 V Efficiency - % Efficiency - % VI = 16 V 80 VI = 16 V 70 V(BAT) = 4.2 V 1-Cell 60 70 V(BAT) = 8.4 V 2-Cell 60 50 50 0 0.5 1 1.5 I(BAT) - Charge Current - A Figure 1. Efficiency vs Charge Current 10 80 Submit Documentation Feedback 2 0 0.5 1 1.5 2 I(BAT) - Charge Current - A Figure 2. Efficiency vs Charge Current Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8 Detailed Description 8.1 Overview The bqSWITCHER™ supports a precision Li-ion or Li-polymer charging system for single cell or two cell applications. The device has a battery detect scheme that allows it to automatically detect the presence and absence of a battery. When the battery is detected, charging begins in one of three phases (depending upon battery voltage): precharge, constant current (fast-charge current regulation), and constant voltage (fast-charge voltage regulation). The device will terminate charging when the termination current threshold has been reached and will begin a recharge cycle when the battery voltage has dropped below the recharge threshold (VRCG). Precharge, constant current, and termination current can be configured through the ISET1 and ISET2 pins, allowing for flexibility in battery charging profile. During charging, the integrated fault monitors of the device, such as battery short detection (VSHORT), thermal shutdown (internal TSHTDWN and TS pin), and safety timer expiration (TTC pin), ensure battery safety. bqSWITCHER™ has three status pins (STAT1, STAT2, and PG) to indicate the charging status and input voltage (AC adapter) status. These pins can be used to drive LEDs or communicate with a host processor. Precharge Phase Voltage Regulation and Charge Termination Phase Current Regulation Phase Regulation Voltage Regulation Current Charge Voltage VLOW VSHORT Charge Current Precharge and Termination ISHORT UDG-04037 Programmable Safety Timer Precharge Timer Figure 3. Typical Charging Profile Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 11 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 8.2 Functional Block Diagram Protection PMOS FET is OFF when not charging or in SLEEP to prevent discharge of battery when IN < BAT Rsns IN OUT VIN Sense FET IN Poff VCC PG CHARGE SLEEP 10 Synch V(150 mA) VCC-6V PGND VCC Sense FET Vuvlo UVLO/POR POR Icntrl 6V VTSB VTSB Co 10 F Temp VCC TG VCC-6V V(3.6A) 2.1V + Pack- PGND VCC PkILim Voltage Reference Pack+ H OUT Isynch BG TG Lo I VCC/10 RAMP (Vpp=VCC/10) Gate Drive to FB FB SPIN ONLY BG SYNCH VCC-6V MOD OSC Q S MOD Q R VCC OVP RAMP PkILim or OVP TIMEOUT FAULT SUSPEND TERM UVLO/POR SNS VCC + - Ibat Reg + - ∗ TIMEOUT COMPENSATION 1k PG SUSPEND SLEEP + - VCC + CLAMP BAT VCC VCC UVLO/ POR 1V 50 mV VTSB CE CE BAT Vbat Reg + 2.1V Vrch CONTROL LOGIC (STATE MACHINE) 20uA 20uA Term_Det SNS+ VCC LowV TERM SLEEP SUSPEND FB 1C 1V VSHORT DISCHARGE Wake PkILim CELLS (bq24103/04/13) FB (bq24105/15) N/C (bq24100) VTSB 2C Vreg + - ISET1 FASTCHG Disable WAKE VCC FB SPIN BAT BAT_PRS_ disch CHARGE VCC BAT Charge RSET1 PRE-CHARGE STAT1 SYNCH Charge STAT2 0.1V Discharge SLEEP SNS + 1k - Vovp OVP BAT OVP 2.1V TERM VCC 0.25V Vrch 30ms Dgltch DSABL_TERM 1V TTC TIMER CLK Term & Timer Disable 0.75V TIMER FF CHAIN 0.5V PRE-CHG TIMEOUT VSS bqSWITCHER RESET FAST CHG TIMEOUT LowV 30ms Dgltch BAT_PRS_dischg VSHORT BAT + - ISET2 PRE-CHG Disable RSET2 + - FASTCHG Disable VTSB 0.1V 30ms dgltch Term_Det VTSB TS LTF SUSPEND TS SPIN TEMP SUSPEND HTF TCO bq2410x ∗Patent Pending #36889 12 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8.3 Feature Description 8.3.1 PWM Controller The bq241xx provides an integrated fixed 1-MHz frequency voltage-mode controller with Feed-Forward function to regulate charge current or voltage. This type of controller is used to help improve line transient response, thereby simplifying the compensation network used for both continuous and discontinuous current conduction operation. The voltage and current loops are internally compensated using a Type-III compensation scheme that provides enough phase boost for stable operation, allowing the use of small ceramic capacitors with very low ESR. There is a 0.5 V offset on the bottom of the PWM ramp to allow the device to operate between 0% to 100% duty cycle. The internal PWM gate drive can directly control the internal PMOS and NMOS power MOSFETs. The high-side gate voltage swings from VCC (when off), to VCC-6 (when on and VCC is greater than 6 V) to help reduce the conduction losses of the converter by enhancing the gate an extra volt beyond the standard 5 V. The low-side gate voltage swings from 6 V, to turn on the NMOS, down to PGND to turn it off. The bq241xx has two back to back common-drain P-MOSFETs on the high side. An input P-MOSFET prevents battery discharge when IN is lower than BAT. The second P-MOSFET behaves as the switching control FET, eliminating the need of a bootstrap capacitor. Cycle-by-cycle current limit is sensed through the internal high-side sense FET. The threshold is set to a nominal 3.6 A peak current. The low-side FET also has a current limit that decides if the PWM Controller will operate in synchronous or non-synchronous mode. This threshold is set to 100 mA and it turns off the low-side NMOS before the current reverses, preventing the battery from discharging. Synchronous operation is used when the current of the low-side FET is greater than 100 mA to minimize power losses. 8.3.2 Temperature Qualification The bqSWITCHER™ continuously monitors battery temperature by measuring the voltage between the TS pin and VSS pin. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this voltage. The bqSWITCHER™ compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a charge cycle, the battery temperature must be within the V(LTF)-to-V(HTF) thresholds. If battery temperature is outside of this range, the bqSWITCHER™ suspends charge and waits until the battery temperature is within the V(LTF)-to-V(HTF) range. During the charge cycle (both precharge and fast charge), the battery temperature must be within the V(LTF)-to-V(TCO) thresholds. If battery temperature is outside of this range, the bqSWITCHER™ suspends charge and waits until the battery temperature is within the V(LTF)-toV(HTF) range. The bqSWITCHER™ suspends charge by turning off the PWM and holding the timer value (that is, timers are not reset during a suspend condition). Note that the bias for the external resistor divider is provided from the VTSB output. Applying a constant voltage between the V(LTF)-to-V(HTF) thresholds to the TS pin disables the temperature-sensing feature. VO(VTSB) ´ RTHCOLD ´ RTHHOT ´ 1 - 1 VLTF VHTF RT2 = RTHHOT ´ ( VO(VTSB) -1 VHTF VO(VTSB) -1 VLTF RT1 = 1 + 1 RT2 RTHCOLD ) - RTHCOLD ´ ( VO(VTSB) -1 VLTF ) Where: VLTF = VO(VTSB) ´ % LTF¸100 / 100 VHTF = VO(VTSB) ´ % HTF¸100 / 100 Copyright © 2004–2015, Texas Instruments Incorporated (1) Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 13 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Feature Description (continued) VCC Charge Suspend Charge Suspend V(LTF) Temperature Range to Initiate Charge V(HTF) V(TCO) Charge Suspend Temperature Range During Charge Cycle Charge Suspend VSS Figure 4. TS Pin Thresholds 8.3.3 Battery Preconditioning (Precharge) On power up, if the battery voltage is below the VLOWV threshold, the bqSWITCHER™ applies a precharge current, IPRECHG, to the battery. This feature revives deeply discharged cells. The bqSWITCHER™ activates a safety timer, tPRECHG, during the conditioning phase. If the VLOWV threshold is not reached within the timer period, the bqSWITCHER™ turns off the charger and enunciates FAULT on the STATx pins. In the case of a FAULT condition, the bqSWITCHER™ reduces the current to IDETECT. IDETECT is used to detect a battery replacement condition. Fault condition is cleared by POR or battery replacement. The magnitude of the precharge current, IO(PRECHG), is determined by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V (ISET2) I O(PRECHG) + R(ISET2) R(SNS) ǒ Ǔ where • • • • RSNS is the external current-sense resistor V(ISET2) is the output voltage of the ISET2 pin K(ISET2) is the V/A gain factor V(ISET2) and K(ISET2) are specified in the Electrical Characteristics table. (2) 8.3.4 Battery Charge Current The battery charge current, IO(CHARGE), is established by setting the external sense resistor, R(SNS), and the resistor, R(ISET1), connected to the ISET1 pin. In order to set the current, first choose R(SNS) based on the regulation threshold VIREG across this resistor. The best accuracy is achieved when the VIREG is between 100mV and 200mV. V IREG R (SNS) + I OCHARGE (3) If the results is not a standard sense resistor value, choose the next larger value. Using the selected standard value, solve for VIREG. Once the sense resistor is selected, the ISET1 resistor can be calculated using the following equation: 14 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Feature Description (continued) R ISET1 + K ISET1 RSNS V ISET1 I CHARGE (4) 8.3.5 Battery Voltage Regulation The voltage regulation feedback occurs through the BAT pin. This input is tied directly to the positive side of the battery pack. The bqSWITCHER™ monitors the battery-pack voltage between the BAT and VSS pins. The bqSWITCHER™ is offered in a fixed single-cell voltage version (4.2 V) and as a one-cell or two-cell version selected by the CELLS input. A low or floating input on the CELLS selects single-cell mode (4.2 V) while a highinput through a resistor selects two-cell mode (8.4 V). For the bq24105 and bq24115, the output regulation voltage is specified as: (R1 + R2) VOREG = x VIBAT R2 (5) where R1 and R2 are resistor divider from BAT to FB and FB to VSS, respectively. The bq24105 and bq24115 recharge threshold voltage is specified as: (R1 + R2) VRCH = x 50 mV R2 (6) 8.3.6 Charge Termination and Recharge The bqSWITCHER™ monitors the charging current during the voltage regulation phase. Once the termination threshold, ITERM, is detected, the bqSWITCHER™ terminates charge. The termination current level is selected by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V TERM I TERM + R(ISET2) R(SNS) ǒ Ǔ where • • • • R(SNS) is the external current-sense resistor VTERM is the output of the ISET2 pin K(ISET2) is the A/V gain factor VTERM and K(ISET2) are specified in the Electrical Characteristics table (7) As a safety backup, the bqSWITCHER™ also provides a programmable charge timer. The charge time is programmed by the value of a capacitor connected between the TTC pin and GND by the following formula: t CHARGE + C(TTC) K(TTC) where • • A • • • • C(TTC) is the capacitor connected to the TTC pin K(TTC) is the multiplier (8) new charge cycle is initiated when one of the following conditions is detected: The battery voltage falls below the VRCH threshold. Power-on reset (POR), if battery voltage is below the VRCH threshold CE toggle TTC pin, described as follows. To disable the charge termination and safety timer, the user can pull the TTC input below the VTTC_EN threshold. Going above this threshold enables the termination and safety timer features and also resets the timer. Tying TTC high disables the safety timer only. 8.3.7 Sleep Mode The bqSWITCHER™ enters the low-power sleep mode if the VCC pin is removed from the circuit. This feature prevents draining the battery during the absence of VCC. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 15 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Feature Description (continued) 8.3.8 Charge Status Outputs The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in Table 1. These status pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates that the open-drain transistor is turned off. Table 1. Status Pins Summary Charge State STAT1 STAT2 Charge-in-progress ON OFF Charge complete OFF ON Charge suspend, timer fault, overvoltage, sleep mode, battery absent OFF OFF Table 2. Status Pins Summary (bq24104, bq24108 and bq24109 Only) STAT1 STAT2 Battery absent Charge State OFF OFF Charge-in-progress ON OFF Charge complete OFF ON Battery over discharge, VI(BAT) < V(SC) ON/OFF (0.5 Hz) OFF Charge suspend (due to TS pin and internal thermal protection) ON/OFF (0.5 Hz) OFF Precharge timer fault ON/OFF (0.5 Hz) OFF Fast charge timer fault ON/OFF (0.5 Hz) OFF OFF OFF Sleep mode 8.3.9 PG Output The open-drain PG (power good) indicates when the AC-to-DC adapter (that is, VCC) is present. The output turns on when sleep-mode exit threshold, VSLP-EXIT, is detected. This output is turned off in the sleep mode. The PG pin can be used to drive an LED or communicate to the host processor. 8.3.10 CE Input (Charge Enable) The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables the charge and a high-level VCC signal disables the charge. A high-to-low transition on this pin also resets all timers and fault conditions. Note that the CE pin cannot be pulled up to VTSB voltage. This may create power-up issues. 8.3.11 Timer Fault Recovery As shown in Figure 4, bqSWITCHER™ provides a recovery method to deal with timer fault conditions. The following summarizes this method. Condition 1 VI(BAT) above recharge threshold (VOREG - VRCH) and timeout fault occurs. Recovery method: bqSWITCHER™ waits for the battery voltage to fall below the recharge threshold. This could happen as a result of a load on the battery, self-discharge or battery removal. Once the battery falls below the recharge threshold, the bqSWITCHER™ clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. Condition 2 Charge voltage below recharge threshold (VOREG – VRCH) and timeout fault occurs Recovery method: In this scenario, the bqSWITCHER™ applies the IDETECT current. This small current is used to detect a battery removal condition and remains on as long as the battery voltage stays below the recharge threshold. If the battery voltage goes above the recharge threshold, then the bqSWITCHER™ disables the IDETECT current and executes the recovery method described in Condition 1. Once the battery falls below the recharge threshold, the bqSWITCHER™ clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. 16 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 8.3.12 Output Overvoltage Protection (Applies to All Versions) The bqSWITCHER™ provides a built-in overvoltage protection to protect the device and other components against damages if the battery voltage gets too high, as when the battery is suddenly removed. When an overvoltage condition is detected, this feature turns off the PWM and STATx pins. The fault is cleared once VIBAT drops to the recharge threshold (VOREG – VRCH). 8.3.13 Functional Description For System-Controlled Version (bq2411x) For applications requiring charge management under the host system control, the bqSWITCHER™ (bq2411x) offers a number of control functions. The following section describes these functions. 8.3.14 Precharge and Fast-Charge Control A low-level signal on the CMODE pin forces the bqSWITCHER™ to charge at the precharge rate set on the ISET2 pin. A high-level signal forces charge at fast-charge rate as set by the ISET1 pin. If the battery reaches the voltage regulation level, VOREG, the bqSWITCHER™ transitions to voltage regulation phase regardless of the status of the CMODE input. 8.3.15 Charge Termination and Safety Timers The charge timers and termination are disabled in the system-controlled versions of the bqSWITCHER™. The host system can use the CE input to enable or disable charge. When an overvoltage condition is detected, the charger process stops, and all power FETs are turned off. 8.3.16 Battery Detection For applications with removable battery packs, bqSWITCHER™ provides a battery absent detection scheme to reliably detect insertion and/or removal of battery packs. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 17 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com POR or VRCH Detection routine runs on power up and if VBAT drops below refresh threshold due to removing battery or discharging battery. Yes Enable I(DETECT) for t(DETECT) VI(BAT)<V(LOWV) No BATTERY PRESENT, Begin Charge No BATTERY PRESENT, Begin Charge Yes Apply I(WAKE) for t(WAKE) VI(BAT) > VO(REG) -VRCH Yes BATTERY ABSENT Figure 5. Battery Absent Detection for bq2410x ICs only The voltage at the BAT pin is held above the battery recharge threshold, VOREG – VRCH, by the charged battery following fast charging. When the voltage at the BAT pin falls to the recharge threshold, either by a load on the battery or due to battery removal, the bqSWITCHER™ begins a battery absent detection test. This test involves enabling a detection current, IDISCHARGE1, for a period of tDISCHARGE1 and checking to see if the battery voltage is below the short circuit threshold, VSHORT. Following this, the wake current, IWAKE is applied for a period of tWAKE and the battery voltage is checked again to ensure that it is above the recharge threshold. The purpose of this current is to attempt to close an open battery pack protector, if one is connected to the bqSWITCHER™. Passing both of the discharge and charge tests indicates a battery absent fault at the STAT pins. Failure of either test starts a new charge cycle. For the absent battery condition, typically the voltage on the BAT pin rises and falls between 0V and VOVPthresholds indefinitely. 18 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 VBAT Battery Connected VOREG No Battery Detected 2V/cell No Battery Detected Yes Battery Detected IWAKE IBAT - IDISCHRG1 t DISCHRG1 tWAKE t DISCHRG1 Figure 6. Battery Detect Timing Diagram 8.3.16.1 Battery Detection Example In order to detect a no battery condition during the discharge and wake tests, the maximum output capacitance should not exceed the following: a. Discharge (IDISCHRG1 = 400 μA, tDISCHRG1 = 1s, VSHORT = 2V) I ´t CMAX _ DIS = DISCHRG1 DISCHRG1 VOREG - VSHORT CMAX _ DIS = 400 mA ´ 1 s 4.2 V - 2 V CMAX _ DIS = 182 mF (9) b. Wake (IWAKE = 2 mA, tWAKE = 0.5 s, VOREG – VRCH = 4.1V) IWAKE ´ t WAKE CMAX _ WAKE = (VOREG - VRCH ) - 0 V CMAX _ WAKE = 2 mA ´ 0.5 s (4.2 V - 0.1 V ) - 0 V CMAX _ WAKE = 244 mF (10) Based on these calculations the recommended maximum output capacitance to ensure proper operation of the battery detection scheme is 100 μF which will allow for process and temperature variations. Figure 7 shows the battery detection scheme when a battery is inserted. Channel 3 is the output signal and Channel 4 is the output current. The output signal switches between VOREG and GND until a battery is inserted. Once the battery is detected, the output current increases from 0 A to 1.3 A, which is the programmed charge current for this application. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 19 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com Figure 7. Battery Detection Waveform When a Battery is Inserted Figure 8 shows the battery detection scheme when a battery is removed. Channel 3 is the output signal and Channel 4 is the output current. When the battery is removed, the output signal goes up due to the stored energy in the inductor and it crosses the VOREG – VRCH threshold. At this point the output current goes to 0 A and the IC terminates the charge process and turns on the IDISCHG2 for tDISCHG2. This causes the output voltage to fall down below the VOREG – VRCHG threshold triggering a Battery Absent condition and starting the battery detection scheme. Figure 8. Battery Detection Waveform When a Battery is Removed 8.3.17 Current Sense Amplifier BQ241xx family offers a current sense amplifier feature that translates the charge current into a DC voltage. Figure 9 is a block diagram of this feature. 20 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 OUT ICHARGE SNS RSNS + KISET2 BAT + - + FASTCHG Disable ISET2 RISET2 Figure 9. Current Sense Amplifier The voltage on the ISET2 pin can be used to calculate the charge current. Equation 11 shows the relationship between the ISET2 voltage and the charge current: VISET2 K(ISET2) I CHARGE + R SNS R ISET2 (11) This feature can be used to monitor the charge current (see Figure 10) during the current regulation phase (Fastcharge only) and the voltage regulation phase. The schematic for the application circuit for this waveform is shown in Figure 13. CH3 = Inductor Current CH3 500 mA/div CH1 = ISET2 CH3 0A CH1 200 mV/div CH2 = OUT CH1 0V CH2 16 V CH2 10 V/div t = Time = 200 ms/div Figure 10. Current Sense Amplifier Charge Current Waveform Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 21 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 8.4 Device Functional Modes Figure 11 shows the operational flow chart for a stand-alone charge operation. POR Check for Battery Presence Battery Detect? No Indicate BATTERY ABSENT Yes Suspend Charge TS Pin in LTF to HTF Range? No Indicate CHARGE SUSPEND Yes VBAT <VLOWV Yes Regulate IPRECHG Reset and Start T30min timer Indicate ChargeIn-Progress No Suspend Charge Reset and Start FSTCHG timer TS pin in LTF to TCO range? Regulate Current or Voltage Yes No Indicate CHARGE SUSPEND No TS pin in LTF to HTF range? Indicate ChargeIn-Progress No VBAT <VLOWV Suspend Charge TS Pin in LTF to TCO Range? Yes Yes No Indicate CHARGE SUSPEND Yes No T30min Expired? No TS pin in LTF to HTF range? FSTCHG Timer Expired? No Yes Yes Yes VBAT <VLOWV Yes No - Fault Condition - Enable I DETECT No ITERM detection? Indicate Fault No Yes Battery Replaced? (Vbat < Vrch?) - Turn Off Charge - Enable I DISCHG for tDISCHG2 Indicate ChargeIn-Progress *NOTE: If the TTC pin is pulled low, the safety timer and termination are disabled; the charger continues to regulate, and the STAT pins indicate charge in progress. If the TTC pin is pulled high (VTSB), only the safety timer is disabled (termination is normal). Yes Charge Complete VBAT < VRCH ? No Indicate DONE * Battery Removed Yes Indicate BATTERY ABSENT Figure 11. Stand-Alone Version Operational Flow Chart 22 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Device Functional Modes (continued) Figure 12 shows the operational flow chart for a system-controlled charge operation. POR SLEEP MODE No Vcc > VI(BAT) Checked at All Times No Indicate SLEEP MODE Yes /CE=Low Yes Regulate IO(PRECHG) CMODE=Low Yes Indicate ChargeIn-Progress No Yes /CE=High No Regulate Current or Voltage Indicate ChargeIn-Progress Yes Yes CMODE=High or VIBAT in VREG Yes No CMODE=Low No No /CE=High Yes Turn Off Charge Indicate DONE Yes No /CE=Low Yes Figure 12. System-Controlled Operational Flow Chart Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 23 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The bqSWITCHER™ battery charger supports precision Li-ion or Li-polymer charging system for single- or twocell application. The design example below shows the design consideration for a 1-cell application. 9.2 Typical Application LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC 2 STAT1 PGND 18 RSNS 10 mH COUT D1 PGND 17 Battery Pack 0.1W 10 mF Pack+ Pack- MMBZ18VALT1 103AT 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 13 NC 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF 0.1 mF Figure 13. Stand-Alone, 1-Cell Application 9.2.1 Design Requirements For this design example, use the parameters listed in Table 3. Table 3. Design Parameters DESIGN PARAMETER AC adapter voltage (VIN) Battery charge voltage (number of cells in series) EXAMPLE VALUE 16 V 4.2 V (1 cell) Battery charge current (during fast charge phase) 1.33 A Precharge and termination current 0.133 A Safety timer 5 hours Inductor ripple current Charging temperature range 24 Submit Documentation Feedback 30% of fast charge current (0.4 A) 0°C to 45°C Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 9.2.2 Detailed Design Procedure • VIN = 16 V • VBAT = 4.2 V (1-Cell) • ICHARGE = 1.33 A • IPRECHARGE = ITERM = 133 mA • Safety Timer = 5 hours • Inductor Ripple Current = 30% of Fast Charge Current • Initiate Charge Temperature = 0°C to 45°C 1. Determine the inductor value (LOUT) for the specified charge current ripple: DI L + I CHARGE I CHARGERipple L OUT + L OUT + ǒVINMAX * VBATǓ VBAT ƒ V INMAX DI L 4.2 (16 * 4.2) (1.1 106) (1.33 16 0.3) L OUT + 7.06 mH (12) Set the output inductor to standard 10 μH. Calculate the total ripple current with using the 10 μH inductor: DI L + DI L + ǒVINMAX * VBATǓ VBAT ƒ V INMAX 16 LOUT 4.2 (16 * 4.2) (1.1 106) (10 10 *6) DI L + 0.282 A (13) Calculate the maximum output current (peak current): DI I LPK + I OUT ) L 2 I LPK + 1.33 ) 0.282 2 I LPK + 1.471 A (14) Use standard 10 μH inductor with a saturation current higher than 1.471 A. (that is, Sumida CDRH74-100) 2. Determine the output capacitor value (OUT) using 16 kHz as the resonant frequency: 1 ƒo + Ǹ 2p LOUT COUT 1 C OUT + 4p 2 ƒo C OUT + 4p 2 (16 2 L OUT 1 10 3)2 (10 10 *6) C OUT + 9.89 mF (15) Use standard value 10 μF, 25 V, X5R, ±20% ceramic capacitor (that is, Panasonic 1206 ECJ-3YB1E106M 3. Determine the sense resistor using the following equation: V R SNS + RSNS I CHARGE (16) Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 25 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com In order to get better current regulation accuracy (±10%), let VRSNS be between 100 mV and 200 mV. Use VRSNS = 100 mV and calculate the value for the sense resistor. R SNS + 100 mV 1.33 A R SNS + 0.075 W (17) This value is not standard in resistors. If this happens, then choose the next larger value which in this case is 0.1 Ω. Using the same Equation 15 the actual VRSNS will be 133 mV. Calculate the power dissipation on the sense resistor: P RSNS + I CHARGE P RSNS + 1.332 2 R SNS 0.1 P RSNS + 176.9 mW (18) Select standard value 100 mΩ, 0.25 W 0805, 1206 or 2010 size, high precision sensing resistor. (that is., Vishay CRCW1210-0R10F) 4. Determine ISET 1 resistor using the following equation: K V ISET1 R ISET1 + ISET1 RSNS I CHARGE R ISET1 + 1000 1.0 0.1 1.33 R ISET1 + 7.5 kW (19) Select standard value 7.5 kΩ, 1/16W ±1% resistor (that is, Vishay CRCWD0603-7501-F) 5. Determine ISET 2 resistor using the following equation: KISET2 VISET2 R ISET2 + RSNS I PRECHARGE R ISET2 + 1000 0.1 0.1 0.133 R ISET2 + 7.5 kW (20) Select standard value 7.5 kΩ, 1/16W ±1% resistor (that is, Vishay CRCWD0603-7501-F) 6. Determine TTC capacitor (TTC) for the 5.0 hours safety timer using the following equation: t C TTC + CHARGE K TTC C TTC + 300 m 2.6 mńnF C TTC + 115.4 nF (21) Select standard value 100 nF, 16V, X7R, ±10% ceramic capacitor (that is, Panasonic ECJ-1VB1C104K). Using this capacitor the actual safety timer will be 4.3 hours. 7. Determine TS resistor network for an operating temperature range from 0°C to 45°C. 26 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 VTSB RT1 TS RTH RT2 103AT Figure 14. TS Resistor Network Assuming a 103AT NTC Thermistor on the battery pack, determine the values for RT1 and RT2 using the following equations: VO(VTSB) ´ RTHCOLD ´ RTHHOT ´ 1 - 1 VLTF VHTF RT2 = RTHHOT ´ ( VO(VTSB) -1 VHTF VO(VTSB) -1 VLTF RT1 = 1 + 1 RT2 RTHCOLD ) - RTHCOLD ´ ( VO(VTSB) -1 VLTF ) Where: VLTF = VO(VTSB) ´ % LTF¸100 / 100 VHTF = VO(VTSB) ´ % HTF¸100 / 100 (22) RTH COLD + 27.28 kW RTH HOT + 4.912 kW RT1 + 9.31 kW RT2 + 442 kW (23) 9.2.2.1 Inductor, Capacitor, and Sense Resistor Selection Guidelines The bqSWITCHER™ provides internal loop compensation. With this scheme, best stability occurs when LC resonant frequency, fo is approximately 16 kHz (8 kHz to 32 kHz). Use Equation 24 to calculate the value of the output inductor and capacitor. Table 4 provides a summary of typical component values for various charge rates. 1 f0 + Ǹ 2p L OUT C OUT (24) Table 4. Output Components Summary CHARGE CURRENT 0.5 A 1A Output inductor, LOUT 22 μH 10 μH 4.7 μH Output capacitor, COUT 4.7 μF 10 μF 22 μF (or 2 × 10 μF) ceramic Sense resistor, R(SNS) 0.2 Ω 0.1 Ω 0.05 Ω Copyright © 2004–2015, Texas Instruments Incorporated 2A Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 27 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 9.2.3 Application Curve 100 90 Efficiency - % VI = 5 V 80 VI = 16 V 70 V(BAT) = 4.2 V 1-Cell 60 50 0 0.5 1 2 1.5 I(BAT) - Charge Current - A Figure 15. Efficiency vs Charge Current 9.3 System Examples BQ24103 BQ24104 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge LOUT 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH COUT D1 Battery Pack 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 (see Note A) 2 Pack+ 103AT STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC ISET2 9 16 CE 0.1 mF RT1 442 KW RT2 TS 12 10 VSS 0.1 mF 9.31 KW RISET2 13 CELLS VTSB 11 0.1 mF 0.1 mF VIN 10 kW Zener diode not needed for bq24103A and bq24104. Figure 16. Stand-Alone, 2-Cell Application 28 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 System Examples (continued) LOUT BQ24105 VIN 1.5 KW 10 mF CIN 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH COUT D1 Battery Pack Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 103AT 2 STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 7.5 KW RISET1 ISET1 8 VTSB 7.5 KW CTTC 16 CE ISET2 9 10 VSS 0.1 mF 9.31 KW RT1 442 KW RT2 RISET2 0.1 mF TS 12 13 FB VTSB 11 0.1 mF 301 KW 0.1 mF 100 KW Figure 17. Stand-Alone, 2-Cell Application BQ24113, BQ24113A VIN 3 IN 4 IN 6 VCC 2 STAT1 PGND 18 LOUT OUT 1 10 mH 0.1 mF CIN 10 mF RSNS OUT 20 D1 COUT 0.1W 10 mF Pack+ Pack- MMBZ18VALT1 PGND 17 (see Note A) 19 NC Battery Pack 103AT SNS 15 5 PG 7 CMODE ISET1 8 BAT 14 7.5 KW RISET1 VTSB 7.5 KW 16 CE 10 VSS 13 CELLS ISET2 9 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF TO HOST CONTROLLER Zener diode not needed for bq24113A. Figure 18. System-Controlled Application Figure 19 shows charging a battery and powering system without affecting battery charge and termination. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 29 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com System Examples (continued) RSYS LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC 2 STAT1 PGND 18 PGND 17 RSNS 10 mH D1 COUT 0.1W Battery Pack Pack+ 10 mF Pack- MMBZ18VALT1 103AT 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 7.5 KW VTSB ISET1 8 7.5 KW CTTC 16 CE 9.31 KW ISET2 9 0.1 mF 10 VSS 0.1 mF 13 NC TS 12 VTSB 11 442 KW 0.1 mF 0.1 mF Figure 19. Application Circuit for Charging a Battery and Powering a System Without Affecting Termination The bqSWITCHER™ was designed as a stand-alone battery charger but can be easily adapted to power a system load, while considering a few minor issues. Advantages: 1. The charger controller is based only on what current goes through the current-sense resistor (so precharge, constant current, and termination all work well), and is not affected by the system load. 2. The input voltage has been converted to a usable system voltage with good efficiency from the input. 3. Extra external FETs are not needed to switch power source to the battery. 4. The TTC pin can be grounded to disable termination and keep the converter running and the battery fully charged, or let the switcher terminate when the battery is full and then run off of the battery via the sense resistor. Other Issues: 1. If the system load current is large (≥ 1 A), the IR drop across the battery impedance causes the battery voltage to drop below the refresh threshold and start a new charge. The charger would then terminate due to low charge current. Therefore, the charger would cycle between charging and termination. If the load is smaller, the battery would have to discharge down to the refresh threshold resulting in a much slower cycling. Note that grounding the TTC pin keeps the converter on continuously. 2. If TTC is grounded, the battery is kept at 4.2 V (not much different than leaving a fully charged battery set unloaded). 3. Efficiency declines 2-3% hit when discharging through the sense resistor to the system. The following system example shows charging a battery and powering system without affecting battery charge and termination. 30 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 System Examples (continued) LOUT BQ24105 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH D1 COUT Battery Pack Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 103AT 2 STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 20 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 0.1 mF 13 FB 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF 143 KW 200 KW Figure 20. 1-Cell LiFePO4 Application The LiFePO4 battery has many unique features such as a high thermal runaway temperature, discharge current capability, and charge current. These special features make it attractive in many applications such as power tools. The recommended charge voltage is 3.6 V and termination current is 50 mA. Figure 20 shows an application circuit for charging one cell LiFePO4 using bq24105. The charge voltage is 3.6 V and recharge voltage is 3.516 V. The fast charging current is set to 1.33 A while the termination current is 50 mA. This circuit can be easily changed to support two or three cell applications. However, only 84 mV difference between regulation set point and rechargeable threshold makes it frequently enter into recharge mode when small load current is applied. This can be solved by lower down the recharge voltage threshold to 200 mV to discharge more energy from the battery before it enters recharge mode again. See the application report, Using the bq24105/25 to Charge LiFePO4 Battery, SLUA443, for additional details. The recharge threshold should be selected according to real application conditions. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 31 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 10 Power Supply Recommendations For proper operation of bqSWITCHER™, VCC and IN (tied together) must be from 4.35 V to 16 V. Power limit for the input supply must be greater than the maximum power required for charging the battery (plus any additional load on the output of the switch-mode converter). 11 Layout 11.1 Layout Guidelines It is important to pay special attention to the PCB layout. The following provides some guidelines: • To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed as close as possible to the bqSWITCHER™. The output inductor should be placed directly above the IC and the output capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current path loop area from the OUT pin through the LC filter and back to the GND pin. The sense resistor should be adjacent to the junction of the inductor and output capacitor. Route the sense leads connected across the R(SNS) back to the IC, close to each other (minimize loop area) or on top of each other on adjacent layers (do not route the sense leads through a high-current path). Use an optional capacitor downstream from the sense resistor if long (inductive) battery leads are used. • Place all small-signal components (CTTC, RSET1/2 and TS) close to their respective IC pin (do not place components such that routing interrupts power stage currents). All small control signals should be routed away from the high current paths. • The PCB should have a ground plane (return) connected directly to the return of all components through vias (3 vias per capacitor for power-stage capacitors, 3 vias for the IC PGND, 1 via per capacitor for small-signal components). A star ground design approach is typically used to keep circuit block currents isolated (highpower/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A single ground plane for this design gives good results. With this small layout and a single ground plane, there is not a ground-bounce issue, and having the components segregated minimizes coupling between signals. • The high-current charge paths into IN and from the OUT pins must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be connected to the ground plane to return current through the internal low-side FET. The thermal vias in the IC PowerPAD™ provide the return-path connection. • The bqSWITCHER™ is packaged in a thermally enhanced MLP package. The package includes a thermal pad to provide an effective thermal contact between the IC and the PCB. Full PCB design guidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment, SLUA271. Six 10-13 mil vias are a minimum number of recommended vias, placed in the IC's power pad, connecting it to a ground thermal plane on the opposite side of the PWB. This plane must be at the same potential as VSS and PGND of this IC. • See user's guide SLUU200 for an example of a good layout. WAVEFORMS: All waveforms are taken at Lout (IC Out pin). VIN = 7.6 V and the battery was set to 2.6 V, 3.5 V, and 4.2 V for the three waveforms. When the top switch of the converter is on, the waveform is at ~7.5 V, and when off, the waveform is near ground. Note that the ringing on the switching edges is small. This is due to a tight layout (minimized loop areas), a shielded inductor (closed core), and using a low-inductive scope ground lead (that is, short with minimum loop). Precharge: The current is low in precharge; so, the bottom synchronous FET turns off after its minimum on-time which explains the step between ≉0 V and -0.5 V. When the bottom FET and top FET are off, the current conducts through the body diode of the bottom FET which results in a diode drop below the ground potential. The initial negative spike is the delay turning on the bottom FET, which is to prevent shoot-through current as the top FET is turning off. Fast Charge: This is captured during the constant-current phase. The two negative spikes are the result of the short delay when switching between the top and bottom FETs. The break-before-make action prevents current shoot-through and results in a body diode drop below ground potential during the break time. 32 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Layout Guidelines (continued) Charge during Voltage Regulation and Approaching Termination: Note that this waveform, Figure 23, is similar to the precharge waveform, Figure 21. The difference is that the battery voltage is higher so the duty cycle is slightly higher. The bottom FET stays on longer because there is more of a current load than during precharge; it takes longer for the inductor current to ramp down to the current threshold where the synchronous FET is disabled. Figure 21. Precharge Waveform Figure 22. Fast Charge Waveform Figure 23. Voltage Regulation and Approaching Termination Waveform Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 33 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 11.2 Layout Example Figure 24. bq241xx PCB Layout 11.3 Thermal Considerations The SWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad to provide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB design guidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment, SLUA271. The most common measure of package thermal performance is thermal impedance (θJA) measured (or modeled) from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for θJA is: T * TA q (JA) + J P where • • • TJ = chip junction temperature TA = ambient temperature P = device power dissipation (25) Factors that can greatly influence the measurement and calculation of θJA include: • Whether or not the device is board mounted • Trace size, composition, thickness, and geometry • Orientation of the device (horizontal or vertical) • Volume of the ambient air surrounding the device under test and airflow • Whether other surfaces are in close proximity to the device being tested The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal power FET. It can be calculated from the following equation: P = (VIN ´ lIN ) - (VBAT ´ IBAT ) (26) Due to the charge profile of Li-xx batteries, the maximum power dissipation is typically seen at the beginning of the charge cycle when the battery voltage is at its lowest. (See Figure 3). 34 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 12 Device and Documentation Support 12.1 Device Support 12.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 12.2 Documentation Support 12.2.1 Related Documentation For related documentation see the following: • bq241xx User's Guide, SLUU200 • QFN/SON PCB Attachment, SLUA271 • Using the bq24105/25 to Charge LiFePO4 Battery, SLUA443 12.3 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 5. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY bq24100 Click here Click here Click here Click here Click here bq24103 Click here Click here Click here Click here Click here bq24103A Click here Click here Click here Click here Click here bq24104 Click here Click here Click here Click here Click here bq24105 Click here Click here Click here Click here Click here bq24108 Click here Click here Click here Click here Click here bq24109 Click here Click here Click here Click here Click here bq24113 Click here Click here Click here Click here Click here bq24113A Click here Click here Click here Click here Click here bq24115 Click here Click here Click here Click here Click here 12.4 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.5 Trademarks bqSWITCHER, PowerPAD, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 35 bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 www.ti.com 12.6 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.7 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 36 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments Incorporated Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 PACKAGE OPTION ADDENDUM www.ti.com 12-May-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ24100RHL PREVIEW VQFN RHL 20 TBD Call TI Call TI -40 to 85 BQ24100RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIA BQ24103ARHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKO BQ24103ARHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKO BQ24103ARHLT ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKO BQ24103ARHLTG4 ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKO BQ24103RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CID BQ24104RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 NXW BQ24104RHLT ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 NXW BQ24105RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIF BQ24105RHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIF BQ24108RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIU BQ24108RHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIU BQ24109RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CDY BQ24109RHLT ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CDY BQ24113ARHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKF BQ24113ARHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKF Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 12-May-2015 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ24113ARHLT ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKF BQ24113ARHLTG4 ACTIVE VQFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CKF BQ24113RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIJ BQ24113RHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIJ BQ24115RHLR ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIL BQ24115RHLRG4 ACTIVE VQFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 CIL (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 12-May-2015 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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OTHER QUALIFIED VERSIONS OF BQ24105 : • Automotive: BQ24105-Q1 NOTE: Qualified Version Definitions: • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 3 PACKAGE MATERIALS INFORMATION www.ti.com 12-May-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ24100RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103ARHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103ARHLT VQFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24104RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24104RHLT VQFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24105RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1 BQ24105RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24108RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24109RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24109RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1 BQ24109RHLT VQFN RHL 20 250 180.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1 BQ24109RHLT VQFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113ARHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113ARHLT VQFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24115RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1 BQ24115RHLR VQFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 12-May-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ24100RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24103ARHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24103ARHLT VQFN RHL 20 250 210.0 185.0 35.0 BQ24103RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24104RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24104RHLT VQFN RHL 20 250 210.0 185.0 35.0 BQ24105RHLR VQFN RHL 20 3000 370.0 355.0 55.0 BQ24105RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24108RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24109RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24109RHLR VQFN RHL 20 3000 370.0 355.0 55.0 BQ24109RHLT VQFN RHL 20 250 195.0 200.0 45.0 BQ24109RHLT VQFN RHL 20 250 210.0 185.0 35.0 BQ24113ARHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24113ARHLT VQFN RHL 20 250 210.0 185.0 35.0 BQ24113RHLR VQFN RHL 20 3000 367.0 367.0 35.0 BQ24115RHLR VQFN RHL 20 3000 370.0 355.0 55.0 BQ24115RHLR VQFN RHL 20 3000 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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