DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor • Low power consumption during drive HQ1 SERIES LISTS Products Marking R1 (KΩ) R2 (KΩ) HQ1L2N DP 0.47 1.0 HQ1A3M DQ 1.0 1.0 HQ1F3M DR 2.2 2.2 HQ1F3P DS 2.2 10 HQ1L2Q DT 0.47 4.7 HQ1F2Q DU 0.22 2.2 HQ1A4A DX − 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −10 V IC(DC) −2.0 A IC(pulse) * −3.0 A Base current (DC) IB(DC) −0.04 A Total power dissipation PT ** 2.0 W Collector current (DC) Collector current (Pulse) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ** When 0.7 mm × 16 cm ceramic board is used 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16183EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 HQ1 SERIES HQ1L2N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −20 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.7 A −0.55 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 329 470 611 Ω E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HQ1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.5 A −0.4 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HQ1F3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.3 A −0.3 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 1.54 2.2 2.86 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 − Data Sheet D16183EJ1V0DS HQ1 SERIES HQ1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −20 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.3 A −0.3 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HQ1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.7 A −0.55 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit −100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % HQ1F2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.7 A −0.55 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − Input resistance R1 154 220 286 kΩ E-to-B resistance R2 1.54 2.2 2.86 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D16183EJ1V0DS 3 HQ1 SERIES HQ1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = −20 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 VCE(sat) ** IC = −1.0 A, IB = −20 mA DC current gain Collector saturation voltage Low level input voltage VIL ** − −0.35 VCE = −5.0 V, IC = −100 µA Input resistance R1 − E-to-B resistance R2 7 ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 MIN. Data Sheet D16183EJ1V0DS −0.45 V −0.3 V − − Ω 10 13 kΩ HQ1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16183EJ1V0DS 5 HQ1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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