ON MMSD301T1G Sod-123 schottky barrier diode Datasheet

MMSD301T1G,
SMMSD301T1G,
MMSD701T1G,
SMMSD701T1G,
SOD-123 Schottky
Barrier Diodes
http://onsemi.com
The MMSD301T1, and MMSD701T1 devices are spin−offs of our
popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They
are designed for high−efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
SOD−123
CASE 425
STYLE 1
Features






Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
Cathode
MARKING DIAGRAM
1
xx
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
VR
Vdc
Forward Current (DC) Continous
IF
Forward Power Dissipation
TA = 25C
PF
Junction Temperature
TJ
−55 to +125
C
Storage Temperature Range
Tstg
−55 to +150
C
30
70
200
mA
mW
225
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
Anode
M
G
XXX MG
G
= Specific Device Code
XT = MMSD301T1G
SMMSD301T1G
XH = MMSD701T1G
SMMSD701T1G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MMSD301T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD301T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSD701T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD701T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMSD301T1/D
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
V(BR)R
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
MMSD301T1G, SMMSD301T1G
MMSD701T1G, SMMSD701T1G
CT
Total Capacitance
(VR = 15 V, f = 1.0 MHz)
MMSD301T1G, SMMSD301T1G
(VR = 20 V, f = 1.0 MHz)
MMSD701T1G, SMMSD701T1G
CT
Reverse Leakage
(VR = 25 V)
MMSD301T1G, SMMSD301T1G
(VR = 35 V)
MMSD701T1G, SMMSD701T1G
IR
Forward Voltage
(IF = 1.0 mAdc)
MMSD301T1G, SMMSD301T1G
(IF = 10 mA)
(IF = 1.0 mAdc)
MMSD701T1G, SMMSD701T1G
(IF = 10 mA)
VF
Min
Unit
−
−
−
−
pF
−
−
2
Max
V
30
70
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Typ
0.9
0.5
1.5
1.0
pF
−
0.9
1.5
−
0.5
1.0
nAdc
−
13
200
−
9.0
200
Vdc
−
−
0.38
0.52
0.45
0.6
−
−
0.42
0.7
0.5
1.0
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
TYPICAL CHARACTERISTICS
MMSD301T1G, SMMSD301T1G
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MMSD301T1
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MMSD301T1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
20
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 2. Minority Carrier Lifetime
10
100
MMSD301T1
IF, FORWARD CURRENT (mA)
MMSD301T1
IR, REVERSE LEAKAGE ( m A)
10
TA = 100C
1.0
TA = 75C
0.1
TA = 85C
1.0
TA = 25C
0.01
TA = -40C
10
0.001
TA = 25C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
http://onsemi.com
3
1.0
1.2
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
TYPICAL CHARACTERISTICS
MMSD701T1G, SMMSD701T1G
2.0
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MMSD701T1
f = 1.0 MHz
1.6
1.2
0.8
0.4
0
MMSD701T1
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 5. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 6. Minority Carrier Lifetime
10
100
MMSD701T1
MMSD701T1
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( m A)
20
TA = 100C
1.0
TA = 75C
0.1
10
TA = 85C
TA = -40C
1.0
0.01
TA = 25C
0.001
TA = 25C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.2
50
Figure 7. Reverse Leakage
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Forward Voltage
http://onsemi.com
4
1.6
2.0
MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G,
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
MILLIMETERS
DIM MIN
NOM
MAX
A
0.94
1.17
1.35
A1
0.00
0.05
0.10
b
0.51
0.61
0.71
----c
0.15
D
1.40
1.60
1.80
E
2.54
2.69
2.84
HE
3.56
3.68
3.86
----L
0.25
--10 
q
0
STYLE 1:
PIN 1. CATHODE
2. ANODE
E
2
q
L
b
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMSD301T1/D