Formosa FM1150-MH1 Chip schottky barrier rectifier Datasheet

Chip Schottky Barrier Rectifier
Formosa
MS
FM140-MH1 THRU FM1200-MH1
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Chip Schottky Barrier Rectifiers
Formosa
MS
FM140-MH1 THRU FM1200-MH1
1.0A Surface Mount
Schottky Barrier Rectifiers - 40V-200V
Features
Package outline
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, l ow forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. FM140-MH1-H.
SOD-123H1
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
0.012(0.3) Typ.
0.004(0.1) Typ.
Mechanical data
•
•
•
Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H1
Terminals :Plated terminals, solderable per MIL-STD-750,
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•
•
•
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.0103 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
SYMBOLS FM140-MH1 FM160-MH1 FM1100-MH1 FM1150-MH1 FM1200-MH1 UNITS
Maximum repetitive peak reverse voltage
VRRM
40
60
100
150
200
Volts
Maximum RMS voltage
VRMS
28
42
70
105
140
Volts
Maximum DC blocking voltage
VDC
40
60
100
150
200
Volts
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
(JEDEC Method)
Maximum instantaneous forward voltage at IF=1.0A
Maximum DC reverse current
at rated DC blocking voltage
TJ =25 °C
TJ =100 °C
Typical junction capacitance (Note 1)
Typical thermal resistance junction to ambient
Typical thermal resistance junction to case
IO
1.0
Amps
IFSM
30
Amps
VF
0.50
0.70
0.85
0.92
0.90
Volts
IR
0.5
10
mA
CJ
120
pF
RθJA
RθJC
80
40
°C / W
°C / W
-55 to +150
°C
-55 to +150
°C
Operating junction temperature range
TJ
Storage temperature range
TSTG
-55 to +125
Notes 1: Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
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FAX:886-2-22696141
Page 2
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Rating and characteristic curves (FM140-MH1 THRU FM1200-MH1)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
1.0
1~
FM
12
00
-M
H1
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
PEAK FORWARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
V
MH
1
0
3.0
40
0-
MH
0.2
V
16
0-
0.4
10
60
FM
14
0.6
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
V
00
~2
0
15
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
8.3ms Single Half
TJ=25 C
Sine Wave
.01
JEDEC method
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
40V
60V~200V
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
JUNCTION CAPACITANCE,(pF)
0V
10
1.0
300
250
200
150
100
1.0
TJ=100°C
0.1
TJ=25°C
0.01
50
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM140-MH1 THRU FM1200-MH1
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
FM140-MH1
FM160-MH1
FM1100-MH1
FM1150-MH1
FM1200-MH1
14
16
10
115
120
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
PACKAGE
A
B
C
SOD-123H1
0.071 (1.80)
0.051 (1.30)
0.067 (1.70)
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM140-MH1 THRU FM1200-MH1
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123H1
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM140-MH1 THRU FM1200-MH1
Reel packing
PACKAGE
REEL SIZE
SOD-123H1
7"
COMPONENT
SPACING
REEL
(pcs)
(m/m)
4.0
3,000
BOX
(pcs)
30,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*183*123
178
382*262*387
240,000
8.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM140-MH1 THRU FM1200-MH1
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=125 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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TEL:886-2-22696661
FAX:886-2-22696141
MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-121614
2013/12/17
-
A
7
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