WINNERJOIN BC338-16 Transistor (npn) Datasheet

RoHS
BC337/338
BC337,-16,-25,-40
TRANSISTOR (NPN)
BC338, -16,-25,-40
FEATURES
Power dissipation
PCM:
0.625
W (Tamb=25℃)
1. COLLECTOR
Collector current
ICM:
0.8
A
Collector-base voltage
VCBO:
BC337 50
V
BC338 30
V
Operating and storage junction temperature range
2. BASE
CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
VCBO
Test
O
MIN
N
TYP
MAX
UNIT
50
V
30
V
45
V
25
V
5
V
IC= 10 mA , IB=0
R
T
VCEO
BC338
Emitter-base breakdown voltage
VEBO
Collector cut-off current
ICBO
C
E
L
BC337
conditions
Ic= 100µA, IE=0
BC338
BC337
IC
C
O
unless otherwise specified)
BC337
Collector-emitter breakdown voltage
1 2 3
3. EMITTER
TJ, Tstg: -55℃ to +150℃
ELECTRICAL
D
T
,. L
TO-92
IE= 10µA, IC=0
VCB= 45 V, IE=0
0.1
µA
VCB= 25V, IE=0
0.1
µA
VCE= 40 V, IB=0
0.2
µA
VCE= 20 V, IB=0
0.2
µA
IEBO
VEB= 4 V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC= 100mA
HFE(2)
VCE=1V, IC= 300mA
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50 mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= 500 mA, IB=50 mA
1.2
V
BC338
Collector cut-off current
E
Emitter cut-off current
J
E
DC current gain
W
BC337
ICEO
BC338
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
100
100
160
250
630
250
400
630
60
VCE= 5V, IC= 10mA
Transition frequency
fT
210
MHz
f = 100MHz
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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