¡ Semiconductor 1A MR27V452D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V452D operates on a single +3.3V power supply and is TTL compatible. The MR27V452D provides Page mode which can greatly reduce the read access time. Since the MR27V452D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V452D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 40-pin DIP , 40-pin SOP or 44-pin TSOP packages. FEATURES • 262,144 word x 16bit / 524,288 word x 8bit electrically switchable configuration • Single +3.3V power supply • Access time 100ns Page mode access time 30ns • Input / Output TTL compatible • Three-state output • Packages 40-pin plastic DIP (DIP40-P-600-2.54) (Product name : MR27V452DRP) 40-pin plastic SOP (SOP40-P-525-1.27-K) (Product name : MR27V452DMP) 44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V452DTP) November 1999 1/10 MR27V452D PIN CONFIGURATION (TOP VIEW) NC 1 NC 2 A17 1 A7 2 40 A8 39 A9 A17 3 A7 4 A6 3 A5 4 38 A10 37 A11 A6 5 A5 6 A4 5 A3 6 36 A12 35 A13 A4 7 A3 8 A2 7 A1 8 34 A14 33 A15 A2 9 A1 10 A0 9 32 A16 A0 11 44 NC 43 NC 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 CE 10 VSS 11 31 BYTE/Vpp 30 VSS CE 12 VSS 13 33 BYTE/Vpp 32 VSS OE 12 D0 13 D8 14 29 D15/A-1 28 D7 OE 14 D0 15 D8 16 31 D15/A-1 30 D7 27 D14 26 D6 D1 15 D9 16 D1 17 D9 18 25 D13 24 D5 D2 17 D10 18 D2 19 D10 20 23 D12 22 D4 D3 19 D11 20 D3 21 D11 22 21 VCC PIN NAMES 25 D12 24 D4 23 VCC FUNCTIONS D15/A-1 Data output / Address input A0 - A17 Address input D0 - D14 Data output CE Chip enable OE VCC Power supply voltage VSS GND NC 27 D13 26 D5 44-pin TSOP (II) 40-pin DIP , SOP BYTE/VPP 29 D14 28 D6 Output enable Mode switch / Program power supply voltage Non connection 2/10 MR27V452D BLOCK DIAGRAM A-1 OE BYTE/VPP CE OE PGM Row Decoder CE Memory Matrix 262,144X16-Bit or 524,288X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 Address Buffer X8/X16 Switch Multiplexer & Page Data Latch Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE MODE CE OE BYTE/VPP READ (16-Bit) L L H READ (8-Bit) L L L OUTPUT DISABLE L H STAND-BY H * PROGRAM L H PROGRAM INHIBIT H H PROGRAM VERIFY * : Don't Care H L H L VCC 3.3V H D0 - D7 D8 - D14 DOUT D15/A-1 DOUT Hi-Z L/H Hi-Z * Hi-Z L * DIN 9.75V 4.0V Hi-Z DOUT 3/10 MR27V452D ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 V -0.5 to 5 V - VI Input voltage Value 0 to 70 relative to VSS -0.5 to 11.5 V 1.0 W - RECOMMENDED OPERATING CONDITIONS FOR READ (Ta=0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input "H" level VIH Input "L" level Condition VCC=3.0V-3.6V VIL Min. Typ. Max. 3.0 3.6 Unit V -0.5 - VCC+0.5 V 2.2 - VCC+0.5* V -0.5** - 0.6 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 4/10 MR27V452D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. Output leakage current ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICS1 CE=VCC 50 CE=VIH - µA ICS2 - 1 mA - - 70 mA - - µA Parameter Input leakage current 10 Unit µA VCC power supply current (Read) ICCA VPP power supply current IPP Input "H" level VIH - 2.2 - 10 VCC+0.5* Input "L" level VIL - -0.5** - 0.6 V Output "H" level VOH IOH=-400µA - - V Output "L" level VOL IOL=2.1mA 2.4 - 0.4 V CE=VIL , OE=VIH tc=100ns VPP=VCC V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. AC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Symbol Condition Min. Max. Unit - 100 - - ns Address access time TC TACC Page access cycle time TPC Page access time TPAC TCE TOE TCHZ OE=VIL TOHZ TOH Address access cycle time CE access time OE access time Output disable time Output hold time Measurement conditions Input signal level Input timing reference level Output load Output timing reference level CE=OE=VIL - 100 ns - ns 30 ns - 100 ns - 50 ns 30 ns ns ns 30 - OE=VIL CE=VIL CE=VIL 0 0 CE=OE=VIL 0 - 25 - 0V/3V 0.8V/2.0V 50pF 0.8V/2.0V 2.08V 800ohms Output 50pF 5/10 MR27V452D TIMING CHART NORMAL MODE READ CYCLE tC ADDRESS tOH tCE CE tCHZ tOE OE tOHZ tACC Valid Data DOUT Hi-Z Hi-Z PAGE MODE READ CYCLE tC A3 - A17 tPC tPC A0 - A2 (Word mode) A-1 - A2 (Byte mode) tOH tCE CE tCHZ tOE OE tACC tPAC tPAC tOHZ DOUT Hi-Z Hi-Z 6/10 MR27V452D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Symbol ILI Parameter Input leakage current Condition VI=VCC+0.5V VPP power supply current (Program) IPP2 VCC power supply current ICC CE=VIL - Input "H" level VIH - Input "L" level VIL - Output "H" level VOH IOH=-400µA Output "L" level VOL Program voltage VPP IOL=2.1mA - VCC power supply voltage VCC - Min. - Typ. - Max. 50 mA - - 80 mA 3.0 - VCC+0.5 V -0.5 2.4 - 0.8 - V V - - 0.45 V 9.5 3.9 9.75 10.0 V 4.0 4.1 V 10 Unit µA Voltage is relative to Vss AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - OE set-up time Data set-up time TOES - 2 Typ. - TDS - 100 Address hold time TAH - 2 Data hold time Output float delay from OE TDH TOHZ - TVS TPW - Data valid from OE TOE - Address hold from OE high TAHO - Parameter Address set-up time VPP voltage set-up time Program pulse width Max. - Unit ns - - µs ns - - µs 100 - - 0 - 100 ns ns 2 - - µs 9 10 11 µs - - 0 100 - ns - Min. 100 ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=OE=VIL,BYTE/Vpp=VIH,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 DATA 0 1 0 1 0 1 0 1 0 VH* 0 1 0 1 0 1 0 0 FF00 1 0 1 0 1 0 1 0 1 VH* 1 0 1 0 1 0 1 1 00FF Other conditions FFFF * :VH=8V±0.25V 7/10 MR27V452D Consecutive Programming Waveforms A0 - A17 tAS tAH tPW CE High OE tDS tDH D0 - D15 Din Din tVS BYTE/VPP Consecutive Program Verify Waveforms A0 - A17 High CE tACC tAHO OE tOE D0 - D15 tOHZ Dout Dout 9.75V BYTE/VPP 8/10 MR27V452D Program and Program Verify Cycle Waveforms A0 - A17 tAS tAHO tPW CE tOES OE tOHZ D0 - D15 tOE tDH tDS Din tOHZ Dout 9.75V BYTE/VPP PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input BYTE/VPP Output ( Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Min. - Typ. - Max. 8 (10) Unit - - 60 pF - - 10 (12) ) : DIP only 9/10 MR27V452D Programming / Verify Flow Chart Programming Verify Start Start NO Bad insertion Pin Check NO Pin Check Bad insertion OK OK Address = First location Address = First location VCC=3.0V VPP=3.0V VCC=4.0V VPP=9.75V Verify (One Byte) NG PASS Program 10µs VCC=3.6V VPP=3.6V NO Increment Address Last Address ? Verify (One Byte) YES Address = First location NG PASS Device Passed Device Failed X=0 NG X=X+1 Verify (One Byte) PASS NO Increment Address YES Last Address ? X=2? YES NO VCC=3.0V VPP=3.0V Program 10µs NG Verify (One Byte) PASS Device Passed Device Failed 10/10