APT8011JFLL
800V 51A 0.125Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recongnized"
file # 145592
ISOTOP fi
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
S
S
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8011JFLL
UNIT
800
Volts
51
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
204
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
51
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 25.5A)
TYP
MAX
UNIT
Volts
0.125
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7094 Rev B
Symbol
APT8011JFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
tf
ID = 51A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
1390
VDD = 533V, VGS = 15V
1545
ID = 51A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
19
RG = 0.6Ω
Eon
UNIT
pF
340
650
100
525
23
23
83
ID = 51A @ 25°C
Turn-off Delay Time
MAX
9480
1890
VDD = 400V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
2095
VDD = 533V VGS = 15V
ID = 51A, RG = 5Ω
1800
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
51
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
204
Diode Forward Voltage
2
(VGS = 0V, IS = -51A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
375
Tj = 125°C
1200
Q rr
Reverse Recovery Charge
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
2.5
Tj = 125°C
18
IRRM
Peak Recovery Current
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
36
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7094 Rev B
5-2006
0.20
0.3
0.1
0
t1
t2
0.04
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 2.77mH, RG = 25Ω, Peak IL = 51A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
0.0375
0.142
Dissipated Power
(Watts)
0.0554
0.751
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
TC ( C)
ZEXT
TJ ( C)
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
5.5V
100
5V
80
60
4.5V
40
20
4V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100 120 140
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
= 25.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
NORMALIZED TO
= 10V @ 25.5A
GS
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
6V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2006
ID, DRAIN CURRENT (AMPERES)
120
1.15
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VGS =15 & 10V
050-7094 Rev B
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
120
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
APT8011JFLL
160
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
50
1mS
10
5
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
D
= 51A
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Coss
1,000
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Ciss
10,000
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
APT8011JFLL
30,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
204
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
350
300
V
DD
R
G
td(off)
100
= 533V
= 5Ω
T = 125°C
J
250
V
DD
R
G
200
= 5Ω
T = 125°C
J
L = 100µH
150
100
50
3500
V
DD
R
G
30
14,000
= 533V
= 5Ω
EON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
500
20
I
DD
D
30
= 533V
= 51A
T = 125°C
J
L = 100µH
0
10
20
V
12,000
T = 125°C
30
40
50
60
70
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
5-2006
050-7094 Rev B
2500
tr
40
50
60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
J
3000
40
0
10
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
4000
20
60
20
td(on)
0
10
tf
80
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
Eoff
L = 100µH
E ON includes
10,000
diode reverse recovery.
8,000
6,000
4,000
Eon
2,000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8011JFLL
10%
Gate Voltage
90%
TJ = 125°C
Gate Voltage
td(off)
td(on)
tr
DrainVoltage
Drain Current
90%
90%
5%
10%
TJ = 125°C
tf
5%
10%
Drain Current
DrainVoltage
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2006
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7094 Rev B
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)