Renesas H7N1004M Silicon n-channel mosfet high-speed power switching Datasheet

H7N1004LD, H7N1004LS, H7N1004LM
Silicon N-Channel MOSFET
High-Speed Power Switching
REJ03G0072-0600Z
(Previous ADE-208-1552E(Z))
Rev.6.00
Aug.27.2003
Features
•
•
•
•
Low on-resistance
RDS(on) = 25 mΩ typ.
Low drive current
Available for 4.5 V gate drive
Outline
LDPAK
4
4
4
D
G
1
1
S
2
3
H7N1004LS
3
H7N1004LD
Rev.6.00, Aug.27.2003, page 1 of 11
2
1
2
3
H7N1004LM
1. Gate
2. Drain
3. Source
4. Drain
H7N1004LD, H7N1004LS, H7N1004LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Note1
Drain peak current
ID (pulse)
100
A
Body-drain diode reverse drain
current
IDR
30
A
Avalanche current
IAP Note 3
15
A
22.5
mJ
50
W
Avalanche energy
EAR
Note 3
Note 2
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.6.00, Aug.27.2003, page 2 of 11
H7N1004LD, H7N1004LS, H7N1004LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
100
—
—
V
ID = 10 mA, VGS = 0
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V Note 1
Static drain to source on state
RDS(on)
—
25
35
mΩ
ID = 15 A, VGS = 10 V Note 1
—
30
45
mΩ
ID = 15 A, VGS = 4.5 V Note 1
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage
resistance
Forward transfer admittance
|yfs|
22
37
—
S
ID = 15 A, VGS = 10 V Note 1
Input capacitance
Ciss
—
2800
—
pF
VDS = 10 V
Output capacitance
Coss
—
240
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
140
—
pF
f = 1 MHz
Total gate charge
Qg
—
50
—
nC
VDD = 50 V
Gate to source charge
Qgs
—
9
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
11
—
nC
ID = 30 A
Turn-on delay time
td(on)
—
23
—
ns
VGS = 10 V, ID = 15 A
Rise time
tr
—
120
—
ns
RL = 2 Ω
Turn-off delay time
td(off)
—
70
—
ns
Rg = 4.7 Ω
Fall time
tf
—
9.5
—
ns
Body-drain diode forward voltage
VDF
—
0.9
—
V
IF = 30 A, VGS = 0
Body-drain diode reverse recovery
time
trr
—
47
—
ns
IF = 30 A, VGS = 0
diF/dt = 100 A/µs
Notes: 1. Pulse test
Rev.6.00, Aug.27.2003, page 3 of 11
H7N1004LD, H7N1004LS, H7N1004LM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
200
100
Drain Current I D (A)
Channel Dissipation
Pch (W)
80
60
40
20
30
10
µ
0µ s
s
10
1
=
DC 10 ms
m
(T Op s (
c = e 1s
25 ratio hot)
°C n
)
10
3
1
0.3 Operation in
this area is
0.1 limited by RDS(on)
0
50
100
Case Temperature
150
200
0.02
0.1
Tc (°C)
Typical Output Characteristics
50
V DS = 10 V
Pulse Test
40
30
3.5 V
20
10
Drain Current I D (A)
40
30
20
10
VGS = 3 V
0
3
30
0.3
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
4V
6V
Ta = 25°C
50
Pulse Test
10 V
Drain Current I D (A)
PW
2
4
6
8
10
Drain to Source Voltage V DS (V)
Rev.6.00, Aug.27.2003, page 4 of 11
-25°C
25°C
Tc = 75°C
0
3
4
5
1
2
Gate to Source Voltage V GS (V)
H7N1004LD, H7N1004LS, H7N1004LM
Drain to Source Saturation Voltage
V DS(on) (V)
1.0
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
Pulse Test
0.8
0.6
I D = 20 A
0.4
10 A
0.2
5A
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V GS = 4.5 V
20
10 V
10
5
0
5
10
15
1
20
Gate to Source Voltage VGS (V)
80
I D = 20 A
5, 10 A
60
40
V GS = 4.5 V
I D = 20 A
5, 10 A
20
V GS = 10 V
0
–25
0
25
50
75
100 125 150
Case Temperature Tc
Rev.6.00, Aug.27.2003, page 5 of 11
(°C)
5
10 20
50
Drain Current I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
2
100
Tc = –25°C
10
1
0.1
25°C
75°C
V DS = 10 V
Pulse Test
0.01
0.01
0.1
1
10
Drain Current I D (A)
100
H7N1004LD, H7N1004LS, H7N1004LM
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
Ciss
2000
1000
500
200
Coss
100
50
10
0.1
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Crss
VGS = 0
f = 1 MHz
20
10
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
10
16
12
80
0
8
VDD = 100 V
50 V
25 V
20
40
60
80
Gate Charge Qg (nC)
Rev.6.00, Aug.27.2003, page 6 of 11
4
VDS
0
100
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty ≤ 1%
R G = 4.7 Ω
Switching Time t (ns)
VGS
120
40
40
50
1000
20
Gate to Source Voltage V GS (V)
Drain to source Voltage V DS (V)
VDD = 25 V
50 V
160
100 V
I D = 30 A
30
Switching Characteristics
Dynamic Input Characteristics
200
20
Drain to Source Voltage V DS (V)
100
tr
t d(off)
t d(on)
tf
10
1
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
H7N1004LD, H7N1004LS, H7N1004LM
Maximum Avalanche Energy vs.
Channel Temperature Derating
EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
0, -5 V
V GS = 10 V
40
Repetitive Avalanche Energy
Reverse Drain Current I DO (A)
50
30
5V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source Drain Voltage
VSD
2.0
40
I AP = 15 A
V DD = 50 V
duty < 0.1 %
Rg > 50 Ω
32
24
16
8
0
25
(V)
Avalanche Test Circuit
50
75
100
Channel Temperature
125
150
Tch (°C)
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.6.00, Aug.27.2003, page 7 of 11
VDD
H7N1004LD, H7N1004LS, H7N1004LM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.03
θ ch - c(t) = γs (t) • θ ch - c
θ ch - c = 2.5°C/ W, Tc = 25°C
0.1
0.05
0.02
1
e
0.0
uls
tp
o
h
1s
0.01
10 µ
PDM
PW
T
D=
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 30 V
Vout
10%
10%
90%
td(on)
Rev.6.00, Aug.27.2003, page 8 of 11
tr
10%
90%
td(off)
tf
H7N1004LD, H7N1004LS, H7N1004LM
Package Dimensions
• H7N1004LD
As of January, 2003
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
11.0 ± 0.5
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
Unit: mm
2.49 ± 0.2
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.6.00, Aug.27.2003, page 9 of 11
LDPAK (L)
—
—
1.40 g
H7N1004LD, H7N1004LS, H7N1004LM
• H7N1004LS
As of January, 2003
Unit: mm
(1.5)
10.0
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.7
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.6.00, Aug.27.2003, page 10 of 11
LDPAK (S)-(1)
—
—
1.30 g
H7N1004LD, H7N1004LS, H7N1004LM
• H7N1004LM
As of January, 2003
Unit: mm
(2.3)
10.0
7.8
7.0
2.49 ± 0.2
1.7
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.6.00, Aug.27.2003, page 11 of 11
LDPAK (S)-(2)
—
—
1.35 g
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