AMIS-30660 High Speed CAN Transceiver Description The AMIS−30660 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus and may be used in both 12 V and 24 V systems. The transceiver provides differential transmit capability to the bus and differential receive capability to the CAN controller. Due to the wide common−mode voltage range of the receiver inputs, the AMIS−30660 is able to reach outstanding levels of electromagnetic susceptibility (EMS). Similarly, extremely low electromagnetic emission (EME) is achieved by the excellent matching of the output signals. http://onsemi.com MARKING DIAGRAM 8 8 1 1 • • • • • • PIN ASSIGNMENT TxD 1 8 S GND 2 7 CANH VCC 3 6 CANL RxD 4 5 Vref AMIS− 30660 • • • • Fully Compatible with the ISO 11898−2 Standard Certified “Authentication on CAN Transceiver Conformance (d1.1)” High Speed (up to 1 Mbit/s) Ideally Suited for 12 V and 24 V Industrial and Automotive Applications Low EME Common−Mode Choke is No Longer Required Differential Receiver with Wide Common−Mode Range ($35 V) for High EMS No Disturbance of the Bus Lines with an Unpowered Node Transmit Data (TxD) Dominant Time−out Function Thermal Protection Bus Pins Protected Against Transients in an Automotive Environment Silent Mode in which the Transmitter is Disabled Short Circuit Proof to Supply Voltage and Ground Logic Level Inputs Compatible with 3.3 V Devices These are Pb−Free Devices* 30660−2 ALYW G 30660−2 = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package Features • • • • SOIC−8 CASE 751 PC20040918.3 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 10 1 Publication Order Number: AMIS−30660/D AMIS−30660 Table 1. TECHNICAL CHARACTERISTICS Min Max Unit VCANH Symbol DC Voltage at Pin CANH Parameter 0 < VCC < 5.25 V; No Time Limit Conditions −45 +45 V VCANL DC Voltage at Pin CANL 0 < VCC < 5.25 V; No Time Limit −45 +45 V Vo(dif)(bus_dom) Differential Bus Output Voltage in Dominant State 42.5 W < RLT < 60 W 1.5 3 V tpd(rec−dom) Propagation Delay TxD to RxD See Figure 6 70 245 ns tpd(dom−rec) Propagation Delay TxD to RxD See Figure 6 100 245 ns CM−range Input Common−Mode Range for Comparator Guaranteed Differential Receiver Threshold and Leakage Current −35 +35 V VCM−peak Common−Mode Peak See Figures 7 and 8 (Note 1) −500 500 mV VCM−step Common−Mode Step See Figures 7 and 8 (Note 1) −150 150 mV 1. The parameters VCM−peak and VCM−step guarantee low electromagnetic emission. V CC S 8 3 Thermal shutdown VCC 7 TxD Driver control Timer 1 6 CANH CANL AMIS−30660 RxD 4 COMP V cc / 2 Ri(cm) + V ref 5 Ri(cm) 2 PD20070607.1 Figure 1. Block Diagram GND Table 2. PIN LIST AND DESCRIPTIONS Pin Name Description 1 TxD Transmit data input; low input → dominant driver; internal pull−up current 2 GND Ground 3 VCC Supply voltage 4 RxD Receive data output; dominant transmitter → low output 5 VREF Reference voltage output 6 CANL Low−level CAN bus line (low in dominant mode) 7 CANH High−level CAN bus line (high in dominant mode) 8 S Silent mode control input; internal pull−down current http://onsemi.com 2 AMIS−30660 Table 3. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Unit −0.3 +7 V 0 < VCC < 5.25 V; No Time Limit −45 +45 V 0 < VCC < 5.25 V; No Time Limit −45 +45 V DC Voltage at Pin TxD −0.3 VCC + 0.3 V VRxD DC Voltage at Pin RxD −0.3 VCC + 0.3 V VS DC Voltage at Pin S −0.3 VCC + 0.3 V Vref DC Voltage at Pin VREF −0.3 VCC + 0.3 V Vtran(CANH) Transient Voltage at Pin CANH (Note 2) −150 +150 V Vtran(CANL) Transient Voltage at Pin CANL (Note 2) −150 +150 V Vesd Electrostatic Discharge Voltage at All Pins (Note 3) (Note 5) −4 −500 +4 +500 kV V Latchup Static Latchup at All Pins (Note 4) 100 mA Tstg Storage Temperature −55 +155 °C Tamb Ambient Temperature −40 +125 °C TJunc Maximum Tunction Temperature −40 +150 °C VCC Supply Voltage VCANH DC Voltage at Pin CANH VCANL DC Voltage at Pin CANL VTxD Conditions Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4). 3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7. 4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78. 5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993. Table 4. THERMAL CHARACTERISTICS Symbol Parameter Conditions Value Unit Rth(vj−a) Thermal Resistance from Junction−to−Ambient in SOIC−8 Package In Free Air 150 K/W Rth(vj−s) Thermal resistance from Junction−to−Substrate of Bare Die In Free Air 45 K/W VBAT IN 5V−reg 60 W OUT 60 W 47 nF V CC V CC S RxD CAN controller TxD 3 8 4 7 AMIS− 30660 5 6 1 GND Figure 2. Application Diagram http://onsemi.com 3 Vref CAN BUS CANL 60 W 2 PC20040918.2 CANH GND 60 W 47 nF AMIS−30660 FUNCTIONAL DESCRIPTION Operating Modes The behavior of AMIS−30660 under various conditions is illustrated in Table 5 below. In case the device is powered, one of two operating modes can be selected through Pin S. Table 5. FUNCTIONAL TABLE OF AMIS−30660 (X = DON’T CARE) VCC Pin TxD Pin S Pin CANH Pin CANL Bus State Pin RxD 4.75 V to 5.25 V 0 0 (or Floating) High Low Dominant 0 4.75 V to 5.25 V X 1 VCC / 2 VCC / 2 Recessive 1 4.75 V to 5.25 V 1 (or Floating) X VCC / 2 VCC / 2 Recessive 1 VCC < PORL (Unpowered) X X 0 V < CANH < VCC 0 V < CANL < VCC Recessive 1 PORL < VCC < 4.75 V >2V X 0 V < CANH < VCC 0 V < CANL < VCC Recessive 1 High−Speed Mode circuit is particularly necessary when a bus line short−circuits. If Pin S is pulled low (or left floating), the transceiver is in its high−speed mode and is able to communicate via the bus lines. The signals are transmitted and received to the CAN controller via the Pins TxD and RxD. The slopes on the bus line outputs are optimized to give extremely low electromagnetic emissions. TxD Dominant Time−out Function A TxD dominant time−out timer circuit prevents the bus lines from being driven to a permanent dominant state (blocking all network communication) if Pin TxD is forced permanently low by a hardware and/or software application failure. The timer is triggered by a negative edge on pin TxD. If the duration of the low−level on Pin TxD exceeds the internal timer value tdom, the transmitter is disabled, driving the bus into a recessive state. The timer is reset by a positive edge on Pin TxD. Silent Mode In silent mode, the transmitter is disabled. All other IC functions continue to operate. The silent mode is selected by connecting Pin S to VCC and can be used to prevent network communication from being blocked, due to a CAN controller which is out of control. Fail−Safe Features Overtemperature Detection A current−limiting circuit protects the transmitter output stage from damage caused by an accidental short−circuit to either positive or negative supply voltage, although power dissipation increases during this fault condition. The Pins CANH and CANL are protected from automotive electrical transients (according to “ISO 7637”; see Figure 3). Pin TxD is pulled high internally should the input become disconnected. A thermal protection circuit protects the IC from damage by switching off the transmitter if the junction temperature exceeds a value of approximately 160°C. Because the transmitter dissipates most of the power, the power dissipation and temperature of the IC is reduced. All other IC functions continue to operate. The transmitter off−state resets when Pin TxD goes high. The thermal protection http://onsemi.com 4 AMIS−30660 ELECTRICAL CHARACTERISTICS Definitions is flowing into the pin; sourcing current means the current is flowing out of the pin. All voltages are referenced to GND (Pin 2). Positive currents flow into the IC. Sinking current means the current Table 6. DC AND TIMING CHARACTERISTICS (VCC = 4.75 V to 5.25 V; Tjunc = −40°C to +150°C; RLT = 60 W unless specified otherwise.) Parameter Symbol Conditions Min Typ Max Unit SUPPLY (Pin VCC) ICC Supply Current Dominant; VTXD = 0 V Recessive; VTXD = VCC 25 2 45 4 65 8 mA ICCS Supply Current in silent mode VS = VCC 2 4 8 mA TRANSMITTER DATA INPUT (Pin TxD) VIH High−level input voltage Output recessive 2.0 − VCC+0.3 V VIL Low−level input voltage Output dominant −0.3 − +0.8 V IIH High−level input current VTxD = VCC −1 0 +1 mA IIL Low−level input current VTxD = 0 V −75 −200 −350 mA Ci Input capacitance Not tested − 5 10 pF MODE SELECT (Pin S) VIH High−level input voltage Silent mode 2.0 − VCC+0.3 V VIL Low−level input voltage High−speed mode −0.3 − +0.8 V IIH High−level input current VS = 2 V 20 30 50 mA IIL Low−level input current VS = 0.8 V 15 30 45 mA 0.6 x VCC 0.75 x VCC RECEIVER DATA OUTPUT (Pin RxD) VOH High−level output voltage IRXD = − 10 mA VOL Low−level output voltage IRXD = 6 mA V 0.25 0.45 V REFERENCE VOLTAGE OUTPUT (Pin Vref) VREF Reference output voltage −50 mA < IVREF < +50 mA 0.45 x VCC 0.50 x VCC 0.55 x VCC V VREF_CM Reference output voltage for full common mode range −35 V <VCANH< +35V; −35 V <VCANL< +35V 0.40 x VCC 0.50 x VCC 0.60 x VCC V BUS LINES (Pins CANH and CANL) Vo(reces)(CANH) Recessive bus voltage at pin CANH VTxD = VCC; no load 2.0 2.5 3.0 V Vo(reces)(CANL) Recessive bus voltage at pin CANL VTxD = VCC; no load 2.0 2.5 3.0 V Io(reces) (CANH) Recessive output current at pin CANH −35 V < VCANH < +35 V; 0 V <VCC < 5.25 V −2.5 − +2.5 mA Io(reces) (CANL) Recessive output current at pin CANL −35 V < VCANL < +35 V; 0V <VCC < 5.25 V −2.5 − +2.5 mA Vo(dom) (CANH) Dominant output voltage at pin CANH VTxD = 0 V 3.0 3.6 4.25 V Vo(dom) (CANL) Dominant output voltage at pin CANL VTxD = 0 V 0. 5 1.4 1.75 V Vo(dif) (bus) Differential bus output voltage (VCANH − VCANL) VTxD = 0 V; dominant; 42.5 W < RLT < 60 W 1.5 2.25 3.0 V VTxD = VCC; recessive; No load −120 0 +50 mV Io(sc) (CANH) Short circuit output current at pin CANH VCANH = 0 V; VTxD = 0 V −45 −70 −95 mA Io(sc) (CANL) Short circuit output current at pin CANL V CANL = 36V; VTxD = 0V 45 70 120 mA http://onsemi.com 5 AMIS−30660 Table 6. DC AND TIMING CHARACTERISTICS (VCC = 4.75 V to 5.25 V; Tjunc = −40°C to +150°C; RLT = 60 W unless specified otherwise.) Symbol Parameter Conditions Min Typ Max Unit BUS LINES (Pins CANH and CANL) Vi(dif)(th) Differential receiver threshold voltage −5 V < VCANL < +10 V; −5 V < VCANH < +10 V; See Figure 4 0.5 0.7 0.9 V Vihcm(dif) (th) Differential receiver threshold voltage for high common−mode −35 V < VCANL < +35 V; −35 V < VCANH < +35V; See Figure 4 0.25 0.7 1.05 V Vi(dif) (hys) Differential receiver input voltage hysteresis −5 V < VCANL < +10 V; −5 V < VCANH < +10 V; See Figure 4 50 70 100 mV Ri(cm)(CANH) Common−mode input resistance at pin CANH 15 25 37 KW Ri(cm) (CANL) Common−mode input resistance at pin CANL 15 25 37 KW Ri(cm)(m) Matching between pin CANH and pin CANL common−mode input resistance −3 0 +3 % Ri(dif) Differential input resistance 25 50 75 KW Ci(CANH) Input capacitance at pin CANH VTxD = VCC; not tested 7.5 20 pF Ci(CANL) Input capacitance at pin CANL VTxD = VCC; not tested 7.5 20 pF Ci(dif) Differential input capacitance VTxD = VCC; not tested 3.75 10 pF ILI(CANH) Input leakage current at pin CANH VCC = 0 V; VCANH = 5V 10 170 250 mA ILI(CANL) Input leakage current at pin CANL VCC = 0 V; VCANL = 5V 10 170 250 mA VCM−peak Common−mode peak during transition from dom → rec or rec → dom See Figures 7 and 8 500 mV VCM−step Difference in common−mode between dominant and recessive state See Figures 7 and 8 −150 150 mV 2.2 3.5 4.5 V 150 160 180 °C VCANH = VCANL −500 POWER−ON−RESET (POR) PORL POR level CANH, CANL, Vref in tri− state below POR level THERMAL SHUTDOWN Tj(sd) Shutdown junction temperature TIMING CHARACTERISTICS (see Figures 5 and 6) td(TxD−BUSon) Delay TxD to bus active Vs = 0 V 40 85 130 ns td(TxD−BUSoff) Delay TxD to bus inactive Vs = 0 V 30 60 105 ns td(BUSon−RxD) Delay bus active to RxD Vs = 0 V 25 55 105 ns td(BUSoff−RxD) Delay bus inactive to RxD Vs = 0 V 65 100 135 ns tpd(rec−dom) Propagation delay TxD to RxD from recessive to dominant Vs = 0 V 70 245 ns td(dom−rec) Propagation delay TxD to RxD from dominant to recessive Vs = 0 V 100 245 ns tdom(TxD) TxD dominant time for time out VTxD = 0 V 250 750 ms http://onsemi.com 6 450 AMIS−30660 MEASUREMENT SEUPS AND DEFINITIONS +5 V 100 nF V CC 3 TxD 1 1 nF AMIS− 5 30660 RxD CANH 7 4 6 2 8 20 pF V REF Transient Generator 1 nF CANL PC20040918.4 GND S Figure 3. Test Circuit for Automotive Transients V RxD High Low Hysteresis PC20040829.7 0,9 0,5 V i(dif)(hys) Figure 4. Hysteresis of the Receiver +5 V 100 nF V CC 3 7 TxD CANH 1 AMIS− 5 V ref R LT 30660 RxD 60 W 4 6 8 20 pF CANL 2 S GND PC20040018.5 Figure 5. Test Circuit for Timing Characteristics http://onsemi.com 7 C LT 100 pF AMIS−30660 HIGH LOW TxD CANH CANL dominant 0,9V Vi(dif) = VCANH − VCANL 0,5V recessive RxD 0.7 x VCC 0,3 x VCC t d(TxD−BUSon) t d(TxD−BUSoff) t d(BUSon−RxD) t pd(dom−rec) t pd(rec−dom) t d(BUSoff−RxD) PC20040829.6 Figure 6. Timing Diagram for AC Characteristics +5 V 100 nF V CC 3 TxD 7 10 nF 1 Active Probe AMIS− Generator RxD 6.2 k W CANH 6 30660 6.2 k W 4 5 2 8 20 pF S CANL 30 W Spectrum Anayzer 30 W V REF 47 nF GND PC20040918.6 Figure 7. Basic Test Set−up for Electromagnetic Measurement CANH CANL recessive V CM−step VCM = 0.5*(VCANH + VCANL) V CM−peak PC20040829.7 V CM−peak Figure 8. Common−Mode Voltage Peaks (see Measurement Setup) http://onsemi.com 8 AMIS−30660 DEVICE ORDERING INFORMATION Description Temperature Range Package Type Shipping† AMIS30660CANH2G HS CAN Transc. (5 V) (Matte Sn) −40°C − 125°C SOIC−8 (Pb−Free) 96 Tube / Tray AMIS30660CANH2RG HS CAN Transc. (5 V) (Matte Sn) −40°C − 125°C SOIC−8 (Pb−Free) 3000 / Tape & Reel AMIS30660CANH6G HS CAN Transc. (5 V) (NiPdAu) −40°C − 125°C SOIC−8 (Pb−Free) 96 Tube / Tray AMIS30660CANH6RG HS CAN Transc. (5 V) (NiPdAu) −40°C − 125°C SOIC−8 (Pb−Free) 3000 / Tape & Reel Part Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 AMIS−30660 PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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