ON MMBT3906LT3 General purpose transistor(pnp silicon) Datasheet

MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
• Pb−Free Packages are Available
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Collector −Base Voltage
VCBO
−40
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−200
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING
DIAGRAM
3
1
2A
2
SOT−23 (TO−236)
CASE 318
Style 6
2A
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3906LT1
SOT−23
3000 / Tape & Reel
MMBT3906LT1G
SOT−23
3000 / Tape & Reel
MMBT3906LT3
SOT−23
10000 / Tape & Reel
MMBT3906LT3G
SOT−23
10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 4
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−40
—
Vdc
Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0)
V(BR)CBO
−40
—
Vdc
Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0)
V(BR)EBO
−5.0
—
Vdc
IBL
—
−50
nAdc
ICEX
—
−50
nAdc
60
80
100
60
30
—
—
300
—
—
—
—
−0.25
−0.4
−0.65
—
−0.85
−0.95
fT
250
—
MHz
Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.5
pF
Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
10
pF
Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
2.0
12
kΩ
Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hre
0.1
10
X 10− 4
Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
100
400
—
Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
3.0
60
mhos
Noise Figure (IC = −100 Adc, VCE = −5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
NF
—
4.0
dB
(VCC = −3.0
3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td
—
35
tr
—
35
(VCC = −3.0
3.0 Vdc, IC = −10
10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts
—
225
tf
—
75
Characteristic
OFF CHARACTERISTICS
Base Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc)
Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
1N916
10 < t1 < 500 s
t1
CS < 4 pF*
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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2
MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Fall Time
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3
200
MMBT3906LT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 A
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 A
2
IC = 100 A
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 −4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 10. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
Figure 11. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
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4
MMBT3906LT1
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
−55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
−55 °C TO +25°C
−0.5
+25°C TO +125°C
−1.0
−55 °C TO +25°C
VB FOR VBE(sat)
−1.5
−2.0
200
VC FOR VCE(sat)
0
Figure 15. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 16. Temperature Coefficients
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5
180 200
MMBT3906LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
Figure 17. SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3906LT1/D
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