MA-COM MA4E1338B1-1146T Silicon medium barrier schottky diode Datasheet

MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
Features
Package Outlines
 RF & Microwave Medium Barrier Silicon 8 V
Schottky Diode
 Available as Single Diode, Series Pair or
Unconnected Pair Configurations.
 Low Profile Surface Mount Plastic Package
 Lead Free
 RoHS* Compliant with 260°C Reflow Capability
SOT-23 (287)
SOT-323 (1146)
Description and Applications
The MA4E1338 series is a silicon medium barrier
Schottky diode suitable for use in mixer, detector
and limiter circuits. These diodes are also suitable
for usage in anti-parallel, shunt power surge
protection circuits for 50  and 75  systems.
The MA4E1338 Series of Schottky diodes is
available in the SOT-23 (case style 287), SOT-323
(case style 1146) , SC-79 (case style 1279) and the
SOD 323, (case style 1141) plastic package. These
packages are supplied on tape and reel for
automatic pick and place assembly and for surface
mount placement to circuit boards, as indicated by a
“T” to the P/N suffix.
SOD-323 (1141)
Configurations (Top View)
These Silicon Medium Barrier, 8 V Schottky Diodes
are useful in detector, limiter, mixer, and surge
protection applications for operating frequency
bands from DC through 6 GHz.
3
1
Part Numbers
Part Number
Package Style
MA4E1338A1-287T
SOT-23
MA4E1338A1-1146T
SOT-323
MA4E1338B1-287T
SOT-23
MA4E1338B1-1146T
SOT-323
MA4E1338A1-1141T
SOD-323
MADS-001338-12790T
SC-79
SC-79 (1279)
3
2
Single
MA4E1338A-287T
MA4E1338A-1146T
1
1
2
Series Pair
MA4E1338B-287T
MA4E1338B-1146T
2
Single
MA4E1338A-1141T
MADS-001338-12790T
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
Electrical Specifications @ +25°C
Parameter
Condition
Specification
Forward Voltage (VF)
IF = 1 mA
IF = 10 mA
360 mV max.
500 mV max.
Delta Forward Voltage( VF)
IF = 1 mA
20 mV max.
(for series pair and unconnected pair configurations)
Total Capacitance (CT)
VR = 0 V, F = 1 MHz
1.0 pF max.
Reverse Leakage Current (IR)
VR = 1 V
100 nA max.
Reverse Voltage Breakdown (VB)
IR = 10 µA
8 V min.
Maximum Ratings @ 25°C (unless otherwise specified)1,2
Parameter
Values
Operating Temperature
-55°C to +125°C
Storage Temperature
-55 to +125
Total Power Dissipation
(RF and DC)
250 mW
Continuous Forward Current
30 mA
Surge Forward Current, @ t < 10 ms
100 mA
Reverse Voltage
8V
Soldering Temperature (Standard Part #)
+235°C for 5 sec.
Soldering Temperature (RoHS Compliant Part #)
+260°C for 5 sec.
1. Operation of this device above any one of the Maximum Rated parameters may cause permanent damage.
2. Please refer to Application Note M538 for surface mounting instructions.
2
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
Circuit Models
SOT-23
0.05 pF
0.65 nH
1
0.13 pF
0.7 nH
0.01 pF
3
0.65 nH
0.13 pF
2
0.13 pF
0.01 pF
0.15 pF
0.05 pF
SOT-323
0.05 pF
0.6 nH
1
0.04 pF
0.6 nH
0.06 pF
3
0.6 nH
0.06 pF
2
0.04 pF
0.06 pF
0.04 pF
0.05 pF
SOD-323
0.05 pF
0.47 nH
0.47 nH
1
2
0.2 pF
0.02 pF
0.02 pF
0.2 pF
3
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
Case Styles
SOT-23
SOT-23 (Case Style 287)
DIM.
F
N
A
D
B
M
G
K
L
H
E
C
J
Package Parasitics
Ls = 1.4 nH
Cp = .12 pF
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
—
0.048
—
1.22
B
—
0.008
—
0.20
C
—
0.040
—
1.00
D
0.013
0.020
0.35
0.50
E
0.003
0.006
0.08
0.15
F
0.110
0.119
2.80
3.00
G
0.047
0.056
1.20
1.40
H
0.037 typical
0.95 typical
J
0.075 typical
1.90 typical
K
—
0.103
—
2.60
L
—
0.024
—
0.60
DIM.
GRADIENT
M
10 max.3
N
2 . . .30
3. Applicable on all sides
SOT-323
SOT-323 (Case Style 1146)
DIM.
A
H
E
J
10 M A X .
C
B
G
F
D
Package Parasitics
Ls = 1.2 nH
Cp = 0.11 pF
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
0.063
0.087
1.6
2.2
B
0.045
0.053
1.15
1.35
C
0.079
0.087
2.0
2.2
D
0.047
0.055
1.2
1.4
E
0.008
0.016
0.2
0.4
F
0.031
0.039
0.8
1.0
G
—
0.004
—
0.1
H
0.003
0.006
0.08
0.15
J
0.004
0.010
0.1
0.25
4
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Visit www.macom.com for additional data sheets and product information.
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MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
Case Styles (Cont’d)
SOD-323 (Case Style 1141)
SOD-323
C
F
E
D
G
H
B
A
Package Parasitics
Ls = 1.2 nH
Cp = 0.11 pF
SC-79
DIM.
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
—
0.043
—
1.1
B
—
0.004
—
0.1
C
—
0.008
—
0.2
D
0.010
0.016
0.25
0.4
E
0.003
0.006
0.08
0.15
F
0.063
0.075
1.6
1.9
G
0.045
0.057
1.15
1.45
H
0.091
0.106
2.3
2.7
SC-79 (Case Style 1279)
Package Parasitics
Ls = 0.6 nH
Cp = 0.10 pF
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E1338 Series
Silicon Medium Barrier Schottky Diodes
Rev. V9
M/A-COM Technology Solutions Inc. All rights reserved.
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6
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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