AMD AM29F016D 16 megabit (2 m x 8-bit) cmos 5.0 volt-only, sector erase flash memory-die revision 1 Datasheet

Am29F016D
Known Good Die
Data Sheet
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SUPPLEMENT
Am29F016D Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
■ Manufactured on 0.23 µm process technology
■ High performance
— 120 ns access time
■ Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current (standard access
time to active mode)
■ Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Minimum 1 million erase cycles guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
■ Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■ Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■ Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
■ 20-year data retention at 125°C
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
Publication# 26244 Rev: A Amendment/+1
Issue Date: June 11, 2002
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F016D in Known Good Die (KGD) form is a 16
Mbit, 5.0 volt-only Flash memory. AMD defines KGD as
standard product in die form, tested for functionality and
speed. AMD KGD products have the same reliability and
quality as AMD products in packaged form.
The sector erase architecture allows memory sectors to
be erased and reprogrammed without affecting the data
contents of other sectors. A sector is typically erased
and verified within one second. The device is erased
when shipped from the factory.
Am29F016D Features
The hardware sector group protection feature disables
both program and erase operations in any combination
of the eight sector groups of memory. A sector group
consists of four adjacent sectors.
The Am29F016D is a 16 Mbit, 5.0 volt-only Flash
memory organized as 2,097,152 bytes of 8 bits each.
The 2 Mbytes of data are divided into 32 sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F016D is
manufactured using AMD’s 0.32 µm process technology. This device is designed to be programmed
in-system with the standard system 5.0 volt VCC supply.
A 12.0 volt VPP is not required for program or erase
operations. The device can also be programmed in
standard EPROM programmers.
The standard device offers an access time of 120 ns,
allowing high-speed microprocessors to operate without
wait states. To eliminate bus contention, the device has
separate chip enable (CE#), write enable (WE#), and
output enable (OE#) controls.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state machine that controls
the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and erase operations. Reading data out of
the device is similar to reading from 12.0 volt Flash or
EPROM devices.
The device is programmed by executing the program
command sequence. This invokes the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper
cell margin. The device is erased by executing the erase
command sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from, or
program data to, a sector that is not being erased. True
background erase can thus be achieved.
The device requires only a single 5.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the program and
erase operations. A low VCC detector automatically
inhibits write operations during power transitions. The
host system can detect whether a program or erase
cycle is complete by using the RY/BY# pin, the DQ7
(Data# Polling) or DQ6 (toggle) status bits. After a
program or erase cycle has been completed, the device
automatically returns to the read mode.
A hardware RESET# pin terminates any operation in
progress. The internal state machine is reset to the read
mode. The RESET# pin may be tied to the system reset
circuitry. Therefore, if a system reset occurs during
either an Embedded Program or Embedded Erase algorithm, the device is automatically reset to the read mode.
This enables the system’s microprocessor to read the
boot-up firmware from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
h i gh e s t l e v el s o f q ua l ity, r el ia b il it y, an d c o s t
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time
using the EPROM programming mechanism of hot electron injection.
Electrical Specifications
Refer to the Am29F016D data sheet, publication
number 21444, for full electrical specifications on the
Am29F016D in KGD form.
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F016D KGD
Speed Option (V CC = 5.0 V ± 10%)
-120
Max Access Time, tACC (ns)
120
Max CE# Access, tCE (ns)
120
Max OE# Access, tOE (ns)
50
2
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
10
2
1 38
30
AMD logo location
11
June 11, 2002
21
22
Am29F016D Known Good Die
29
3
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO DIE CENTER)
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
VCC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
VSS
VCC
DQ4
DQ5
DQ6
DQ7
RY/BY#
OE#
WE#
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE#
Pad Center (mils)
X
Y
31.30
90.86
–32.75
94.54
–42.74
90.77
–48.89
90.77
–55.27
90.77
–61.10
90.77
–67.48
90.77
–73.63
90.77
–80.01
90.77
–86.16
90.77
–85.72
–90.77
–79.88
–90.77
–74.42
–90.77
–68.59
–90.77
–58.60
–95.09
–47.60
–95.09
–34.33
–95.09
–23.34
–95.09
–14.38
–94.83
–8.96
–94.83
–3.54
–95.03
16.33
–95.09
27.32
–95.09
40.59
–95.09
51.59
–95.09
62.06
–90.77
72.14
–90.77
79.49
–90.77
85.87
–90.77
82.54
90.77
76.71
90.77
71.25
90.77
65.41
90.77
59.95
90.77
54.12
90.77
48.66
90.77
42.82
90.77
37.36
90.77
Pad Center (millimeters)
X
Y
0.80
2.31
–0.83
2.40
–1.09
2.31
–1.24
2.31
–1.40
2.31
–1.55
2.31
–1.71
2.31
–1.87
2.31
–2.03
2.31
–2.19
2.31
–2.18
–2.31
–2.03
–2.31
–1.89
–2.31
–1.74
–2.31
–1.49
–2.42
–1.21
–2.42
–0.87
–2.42
–0.59
–2.42
–0.37
–2.41
–0.23
–2.41
–0.09
–2.41
0.41
–2.42
0.69
–2.42
1.03
–2.42
1.31
–2.42
1.58
–2.31
1.83
–2.31
2.02
–2.31
2.18
–2.31
2.10
2.31
1.95
2.31
1.81
2.31
1.66
2.31
1.52
2.31
1.37
2.31
1.24
2.31
1.09
2.31
0.95
2.31
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
4
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO VCC)
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
VCC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
VSS
VCC
DQ4
DQ5
DQ6
DQ7
RY/BY#
OE#
WE#
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE#
Pad Center (mils)
X
0.00
–64.05
–74.04
–80.19
–86.57
–92.41
–98.79
–104.94
–111.32
–117.47
–117.02
–111.19
–105.73
–99.89
–89.90
–78.91
–65.64
–54.64
–45.69
–40.26
–34.84
–14.98
–3.98
9.29
20.28
30.75
40.84
48.19
54.57
51.24
45.41
39.94
34.11
28.65
22.81
17.35
11.52
6.06
Y
0.00
3.68
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–181.63
–181.63
–181.63
–181.63
–185.96
–185.96
–185.96
–185.96
–185.69
–185.69
–185.89
–185.96
–185.96
–185.96
–185.96
–181.63
–181.63
–181.63
–181.63
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
–0.09
Pad Center (millimeters)
X
Y
0.00
0.00
–1.63
0.09
–1.88
0.00
–2.04
0.00
–2.20
0.00
–2.35
0.00
–2.51
0.00
–2.67
0.00
–2.83
0.00
–2.98
0.00
–2.97
–4.61
–2.82
–4.61
–2.69
–4.61
–2.54
–4.61
–2.28
–4.72
–2.00
–4.72
–1.67
–4.72
–1.39
–4.72
–1.16
–4.72
–1.02
–4.72
–0.88
–4.72
–0.38
–4.72
–0.10
–4.72
0.24
–4.72
0.52
–4.72
0.78
–4.61
1.04
–4.61
1.22
–4.61
1.39
–4.61
1.30
0.00
1.15
0.00
1.01
0.00
0.87
0.00
0.73
0.00
0.58
0.00
0.44
0.00
0.29
0.00
0.15
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
June 11, 2002
Am29F016D Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F016D
-120
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
=
Industrial (–40°C to +85°C)
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP
= Waffle Pack
180 die per 5 tray stack
DG
= Gel-Pak® Die Tray
432 die per 6 tray stack
DT
= Surftape™ (Tape and Reel)
2500 per 7-inch reel
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F016D Known Good Die
16 Megabit (2 M x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
AM29F016D-120
6
DPC 1, DPI 1,
DGC 1, DGI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
16 mm
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
June 11, 2002
AMD logo location
Am29F016D Known Good Die
7
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F016D product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition,
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1.
8
AMD KGD Product Test Flow
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die Dimensions, X x Y . . . . 186.61 mils x 208.66 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . 4.74 mm x 5.30 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Wafer Sort Test . . . . . . . . . . . . . . . . . . Sunnyvale, CA
. . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia
Manufacturing ID . . . . . . . . . . . . . . . . . . . . . 98J32AK
Bond Pad Size . . . . . . . . . . . . . . 3.52 mils x 3.52 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 89.3 µm x 89.3 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Pad Area Free of Passivation . . . . . . . . . .15.52 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm2
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Fabrication Process . . . . . . . . . . . . . . . . . . . CS49HS
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
SPECIAL HANDLING INSTRUCTIONS
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Processing
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Junction Temperature Under Bias . .TJ (max) = 130°C
Storage
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
June 11, 2002
Am29F016D Known Good Die
9
S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective materials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for
environmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replacement Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original purchase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instructions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the
above-referenced Warranty Exclusions. Buyer shall
ship such defective Die to AMD via AMD’s carrier, collect. Risk of loss will transfer to AMD when the defective Die is provided to AMD’s carrier. If Buyer fails to
adhere to these warranty returns guidelines, Buyer
shall assume all risk of loss and shall pay for all freight
to AMD’s specified location. The aforementioned provisions do not extend the original warranty period of
any Known Good Die that has either been repaired or
replaced by AMD.
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA , AND S HALL HAVE NO LIAB ILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PARTICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSIBILITY OF SUCH DAMAGES.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR
ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reasonably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applications is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
10
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
REVISION SUMMARY
Revision A (April 12, 2002)
Revision A+1 (June 11, 2002)
Initial release.
Ordering Information
Deleted Gel Pak wafer tray from packaging type
options.
Manufacturing Information
Corrected manufacturing ID. Added Sunnyvale, CA to
wafer sort test locations.
Trademarks
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
June 11, 2002
Am29F016D Known Good Die
11
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