RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY PIN CONFIGURATION IN1→ INPUT FEATURES ● Three package configurations (P, FP, and KP) ● Medium breakdown voltage (BVCEO ≥ 35V) ● Synchronizing current (IC(max) = 300mA) ● Low output saturation voltage ● Wide operating temperature range (Ta = –40 to +85°C) 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND 9 10 OUTPUT →NC Package type 18P4G(P) NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals 18 →O1 1 IN2→ INPUT FUNCTION The M63807P/FP/KP each have eight circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. 20 1 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 10 11 →NC GND OUTPUT NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM OUTPUT INPUT 10.5K 10K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63807P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol V CEO IC Parameter VI Collector current Input voltage Pd Power dissipation Topr Operating temperature Storage temperature Tstg Conditions Collector-emitter voltage Output, H Current per circuit output, L Ta = 25°C, when mounted on board RECOMMENDED OPERATING CONDITIONS Symbol VO IC VIN Test conditions Output voltage M63807P (Current per 1 circuit when 8 circuits M63807FP are coming on simultaneously) M63807KP Parameter V (BR) CEO Collector-emitter breakdown voltage VIN(on) h FE Symbol ton toff Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Test conditions ICEO = 10µA IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA “On” input voltage IIN = 1mA, IC = 10mA DC amplification factor VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS mA V M63807P 1.79 M63807FP M63807KP 1.10 0.68 W –40 ~ +85 –55 ~ +125 °C °C Limits min typ max 0 0 0 — — — 35 250 170 0 0 0 0 — — — — 250 130 250 100 0 — 30 Unit V mA V Limits min 35 typ — max — — — 7.5 50 — — 11.0 — 0.2 0.8 15.0 — Unit V V V — (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time 300 –0.5 ~ +35 (Unless otherwise noted, Ta = 25 °C) Symbol VCE(sat) Duty Cycle no more than 50% Input voltage ELECTRICAL CHARACTERISTICS Unit V (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Collector current Ratings –0.5 ~ +35 Test conditions CL = 15pF (note 1) Limits min — typ 120 max — — 240 — Unit ns ns Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63807P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY TIMING DIAGRAM NOTE 1 TEST CIRCUIT Vo INPUT 50% Measured device PG 50% INPUT RL OUTPUT OUTPUT 50Ω 50% 50% CL ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V (2)Input-output conditions : RL = 220Ω, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Input Characteristics Thermal Derating Factor Characteristics 4 2.0 Ta = –40°C 1.5 Input current II (mA) Power dissipation Pd (W) M63807P M63807FP 1.0 0.931 M63807KP 0.572 0.5 Ta = 25°C 2 Ta = 85°C 1 0.354 0 0 25 50 75 85 0 100 0 10 15 20 25 Duty Cycle-Collector Characteristics (M63807P) Duty Cycle-Collector Characteristics (M63807P) 30 400 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) ➀~ ➄ ➅ ➆ ➇ 200 0 5 Input voltage VI (V) 300 100 0 Ambient temperature Ta (°C) 400 Collector current Ic (mA) 3 300 ➀ ~➂ ➃ ➄ ➅ ➆ ➇ 200 100 0 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 20 40 60 80 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63807P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY Duty Cycle-Collector Characteristics (M63807FP) Duty Cycle-Collector Characteristics (M63807FP) 400 ➀~ ➂ ➃ ➄ ➅ ➆ ➇ 300 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 0 20 40 60 100 80 Duty Cycle-Collector Characteristics (M63807KP) Duty Cycle-Collector Characteristics (M63807KP) 400 ➀~ ➁ 300 ➂ ➃ ➄ ➅ ➇➆ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 Duty cycle (%) ➂ ➃ ➄ ➅➆ ➇ •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 100 0 20 40 60 80 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics Output Saturation Voltage Collector Current Characteristics 100 100 Ta = 25°C VI = 28V IB = 2mA IB = 1.5mA IB = 1mA 100 IB = 0.5mA 50 0.2 0.4 0.6 Output saturation voltage VCE(sat) (V) 0.8 Collector current Ic (mA) IB = 3mA 150 0 0 ➁ 200 Duty cycle (%) Ta = 25°C 200 ➀ 300 0 100 250 Collector current Ic (mA) ➃ ➄ ➅➆ ➇ Duty cycle (%) 400 0 ➂ 200 0 100 ➀ ➁ 300 80 VI = 24V VI = 20V VI = 16V 60 VI = 12V VI = 8V 40 20 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL M63807P/FP/KP P 8-UNIT 300mA TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics Output Saturation Voltage Collector Current Characteristics 103 100 DC amplification factor hFE Collector current Ic (mA) II = 2mA 80 Ta = –40°C Ta = 25°C Ta = 85°C 60 40 20 0 0 0.05 0.10 0.15 7 5 VCE 10V Ta = 25°C 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 0.20 Output saturation voltage VCE(sat) (V) Collector current Ic (mA) Grounded Emitter Transfer Characteristics Grounded Emitter Transfer Characteristics 50 250 VCE = 4V VCE = 4V 40 30 Ta = 85°C Collector current Ic (mA) Collector current Ic (mA) Ta = 85°C Ta = –40°C 20 Ta = 25°C 10 0 0 1.0 2.0 3.0 Input voltage VI (V) 4.0 5.0 200 150 Ta = 25°C 100 Ta = –40°C 50 0 0 4 8 12 16 20 Input voltage VI (V) Jan. 2000