Mitsubishi M63807FP 8-unit 300ma transistor array Datasheet

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
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DESCRIPTION
M63807P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
extremely low input-current supply.
M63807P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→
INPUT
FEATURES
● Three package configurations (P, FP, and KP)
● Medium breakdown voltage (BVCEO ≥ 35V)
● Synchronizing current (IC(max) = 300mA)
● Low output saturation voltage
● Wide operating temperature range (Ta = –40 to +85°C)
2
17 →O2
IN3→
3
16 →O3
IN4→ 4
15 →O4
IN5→
5
14 →O5
IN6→ 6
13 →O6
IN7→
7
12 →O7
IN8→
8
11 →O8
GND
9
10
OUTPUT
→NC
Package type 18P4G(P)
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
18 →O1
1
IN2→
INPUT
FUNCTION
The M63807P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
20
1
NC
IN1→ 2
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
IN7→ 8
13 →O7
IN8→ 9
12 →O8
10
11 →NC
GND
OUTPUT
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
10.5K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
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tion
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is n limits
This
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ice: ramet
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M63807P/FP/KP
P
8-UNIT 300mA TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
V CEO
IC
Parameter
VI
Collector current
Input voltage
Pd
Power dissipation
Topr
Operating temperature
Storage temperature
Tstg
Conditions
Collector-emitter voltage
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
RECOMMENDED OPERATING CONDITIONS
Symbol
VO
IC
VIN
Test conditions
Output voltage
M63807P
(Current per 1 circuit when 8 circuits
M63807FP
are coming on simultaneously)
M63807KP
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VIN(on)
h FE
Symbol
ton
toff
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
Test conditions
ICEO = 10µA
IIN = 1mA, IC = 10mA
Collector-emitter saturation voltage
IIN = 2mA, IC = 150mA
“On” input voltage
IIN = 1mA, IC = 10mA
DC amplification factor
VCE = 10V, IC = 10mA
SWITCHING CHARACTERISTICS
mA
V
M63807P
1.79
M63807FP
M63807KP
1.10
0.68
W
–40 ~ +85
–55 ~ +125
°C
°C
Limits
min
typ
max
0
0
0
—
—
—
35
250
170
0
0
0
0
—
—
—
—
250
130
250
100
0
—
30
Unit
V
mA
V
Limits
min
35
typ
—
max
—
—
—
7.5
50
—
—
11.0
—
0.2
0.8
15.0
—
Unit
V
V
V
—
(Unless otherwise noted, Ta = 25°C)
Parameter
Turn-on time
Turn-off time
300
–0.5 ~ +35
(Unless otherwise noted, Ta = 25 °C)
Symbol
VCE(sat)
Duty Cycle no more than 50%
Input voltage
ELECTRICAL CHARACTERISTICS
Unit
V
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector current
Ratings
–0.5 ~ +35
Test conditions
CL = 15pF (note 1)
Limits
min
—
typ
120
max
—
—
240
—
Unit
ns
ns
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63807P/FP/KP
P
8-UNIT 300mA TRANSISTOR ARRAY
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Vo
INPUT
50%
Measured device
PG
50%
INPUT
RL
OUTPUT
OUTPUT
50Ω
50%
50%
CL
ton
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 11V
(2)Input-output conditions : RL = 220Ω, Vo = 35V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TYPICAL CHARACTERISTICS
Input Characteristics
Thermal Derating Factor Characteristics
4
2.0
Ta = –40°C
1.5
Input current II (mA)
Power dissipation Pd (W)
M63807P
M63807FP
1.0
0.931
M63807KP
0.572
0.5
Ta = 25°C
2
Ta = 85°C
1
0.354
0
0
25
50
75 85
0
100
0
10
15
20
25
Duty Cycle-Collector Characteristics
(M63807P)
Duty Cycle-Collector Characteristics
(M63807P)
30
400
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
Duty cycle (%)
80
100
Collector current Ic (mA)
➀~ ➄
➅
➆
➇
200
0
5
Input voltage VI (V)
300
100
0
Ambient temperature Ta (°C)
400
Collector current Ic (mA)
3
300
➀ ~➂
➃
➄
➅
➆
➇
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
20
40
60
80
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63807P/FP/KP
P
8-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics
(M63807FP)
Duty Cycle-Collector Characteristics
(M63807FP)
400
➀~ ➂
➃
➄
➅
➆
➇
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
400
0
20
40
60
100
80
Duty Cycle-Collector Characteristics
(M63807KP)
Duty Cycle-Collector Characteristics
(M63807KP)
400
➀~ ➁
300
➂
➃
➄
➅
➇➆
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
Duty cycle (%)
➂
➃
➄
➅➆
➇
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
100
0
20
40
60
80
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
100
100
Ta = 25°C VI = 28V
IB = 2mA
IB = 1.5mA
IB = 1mA
100
IB = 0.5mA
50
0.2
0.4
0.6
Output saturation voltage VCE(sat) (V)
0.8
Collector current Ic (mA)
IB = 3mA
150
0
0
➁
200
Duty cycle (%)
Ta = 25°C
200
➀
300
0
100
250
Collector current Ic (mA)
➃
➄
➅➆
➇
Duty cycle (%)
400
0
➂
200
0
100
➀
➁
300
80
VI = 24V
VI = 20V
VI = 16V
60
VI = 12V
VI = 8V
40
20
0
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
RY
A
N
I
.
.
tion
nge
ifica to cha
pec
t
al s subjec
in
f
ot a
are
is n limits
This
ric
ice: ramet
t
o
N
e pa
Som
IM
REL
M63807P/FP/KP
P
8-UNIT 300mA TRANSISTOR ARRAY
DC Amplification Factor
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
103
100
DC amplification factor hFE
Collector current Ic (mA)
II = 2mA
80
Ta = –40°C
Ta = 25°C
Ta = 85°C
60
40
20
0
0
0.05
0.10
0.15
7
5
VCE 10V
Ta = 25°C
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
0.20
Output saturation voltage VCE(sat) (V)
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
Grounded Emitter Transfer Characteristics
50
250
VCE = 4V
VCE = 4V
40
30 Ta = 85°C
Collector current Ic (mA)
Collector current Ic (mA)
Ta = 85°C
Ta = –40°C
20
Ta = 25°C
10
0
0
1.0
2.0
3.0
Input voltage VI (V)
4.0
5.0
200
150
Ta = 25°C
100
Ta = –40°C
50
0
0
4
8
12
16
20
Input voltage VI (V)
Jan. 2000
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