isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F; -100V(Min)- BDT96F ·Complement to Type BDT91F/93F/95F APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDT92F -60 BDT94F -80 BDT96F -100 BDT92F -60 BDT94F -80 BDT96F -100 UNIT V V Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25℃ 32 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.4 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDT92F/94F/96F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT92F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT94F MIN TYP. MAX UNIT -60 IC= -100mA ; IB= 0 V -80 -100 BDT96F VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -3 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V -1.6 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=150℃ -0.1 -1 mA ICEO Collector Cutoff Current VCE= VCEOmax V; IB= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -4A ; VCE= -4V 20 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 5 Current-Gain—Bandwidth Product IC= -500mA ; VCE= -10V 4 fT B 200 MHz Switching times ton Turn-On Time 0.5 1.5 μs 1 3 μs IC= -4A; IB1= -IB2= -0.4A toff Turn-Off Time isc Website：www.iscsemi.cn 2