ASB ASL5463 High gain, low noise amplifier Datasheet

ASL5463
ASL5463 Data Sheet
High Gain, Low Noise Amplifier
1. Product Overview
1.1
General Description
ASL5463 is a low noise amplifier with high linearity over a wide range of frequency up to 1.7 ~ 4.0 GHz
with S11 & S22 < -10 dB. It is also suitable for use in the mobile wireless systems such as PCS, WCDMA,
LTE, WiBro, WiMAX, WLAN and so on. It has an active bias circuit for stable current over temperature
and process variation. The amplifier is available in SOT363 package and passes the stringent DC, RF
and reliability tests.
1.2
Features
 17.0 dB Gain at 2000 MHz
 20.0 dBm P1dB at 2000 MHz
 37.0 dBm Output IP3 at 2000 MHz
 0.75 dB NF at 2000 MHz
 Current adjustable with R1 (in application circuit 3.1)
 MTTF > 100 Years
 Single Supply: +3 ~ +5 V
1.3
Applications
 Low Noise Amplifier for PCS, WCDMA, WLAN, and WiMAX
 Other Low Noise Application
1.4
Package Profile & RoHS Compliance
SOT363, 2.1x2.0 mm2, surface mount
1/10
ASB Inc.

[email protected]
RoHS-compliant
June 2014
ASL5463
2. Summary on Product Performances
2.1
Typical Performance
Supply voltage = +5 V, TA = +25 C, ZO = 50 
Parameter
Typical
Unit
Frequency
1500
1700
1800
2000
2500
MHz
Noise Figure
0.65
0.65
0.70
0.75
0.95
dB
Gain
19.4
18.3
17.8
17.0
14.9
dB
S11
-17.0
-18.0
-17.0
-15.0
-14.0
dB
S22
-10.0
-10.0
-10.0
-11.0
-11.0
dB
IP31)
32.0
33.0
34.0
37.0
38.0
dBm
Output P1dB
20.0
20.0
20.0
20.0
20.0
dBm
Current
45
mA
Device Voltage
+5
V
Output
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
2.2
Product Specification
Supply voltage = +5 V, TA = +25 C, ZO = 50 
Parameter
Typ
Max
Unit
Frequency
2000
MHz
Noise Figure
0.75
dB
Gain
17.0
dB
S11
-15.0
dB
S22
-11.0
dB
Output IP3
37.0
dBm
Output P1dB
20.0
dBm
Current
45
mA
Device Voltage
+5
V
2.3
2/10
Min
Pin Configuration
Pin
Description
1
Bias
2, 4, 5
Ground
3
RF_IN
6
RF_OUT & Bias
Simplified Outline
1
2
3
ASB Inc.

[email protected]
6
5
4
June 2014
ASL5463
2.4
Absolute Maximum Ratings
Parameters
Max. Ratings
Operation Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
Operation Junction Temperature
+150 C
Input RF Power (CW, 50  matched)
+25 dBm
2.5
Thermal Resistance
Symbol
Description
Typ
Unit
Rth
Thermal resistance from junction to lead
110
C/W
2.6
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1A
Voltage Level: 400 V
MM
Class A
Voltage Level: 50 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
3/10
ASB Inc.

[email protected]
June 2014
ASL5463
3. Application: 1700 ~ 2500 MHz (Vsupply = +5 V)
3.1
Application Circuit & Evaluation Board
Vdevice = +5 V
R1
C5
C4
R2
C3
L2
C2
L1
RF IN
RF OUT
C1
ASL5463
PCB Information
Material
FR4
Thickness (mm)
0.8
Size (mm)
40x40
EB No.
EB-363-J2
Bill of Material
4/10
Symbol
Value
Size
Description
Manufacturer
ASL5463
-
-
MMIC Amplifier
ASB
C1, C2
100 pF
0603
DC blocking capacitor
Murata
C3
22 pF
0603
Decoupling capacitor
Murata
C4, C5
1 F
0603
Decoupling capacitor
Murata
L1
6.8 nH
0603
RF choke inductor
Murata
L2
8.2 nH
0603
RF choke inductor
Murata
R1
6.8 k
0603
Current adjust resistor
Samsung
R2
51 
0603
Bias resistor
Samsung
ASB Inc.

[email protected]
June 2014
ASL5463
3.2
Performance Table
Supply voltage = +5 V, TA = +25 C, ZO = 50 
Parameter
Typical
Unit
Frequency
1500
1700
1800
2000
2500
MHz
Noise Figure
0.65
0.65
0.70
0.75
0.95
dB
Gain
19.4
18.3
17.8
17.0
14.9
dB
S11
-17.0
-18.0
-17.0
-15.0
-14.0
dB
S22
-10.0
-10.0
-10.0
-11.0
-11.0
dB
Output IP31)
32.0
33.0
34.0
37.0
38.0
dBm
Output P1dB
20.0
20.0
20.0
20.0
20.0
dBm
Current
45
mA
Device Voltage
+5
V
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
Plot of S-parameter & Stability Factor
30
7
S21
S-parameters (dB)
20
10
5
0
4
S22
-10
3
S11
-20
2
K
-30
S12
-40
0
5/10
6
Stability Factor, K
3.3
1
0
500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
ASB Inc.

[email protected]
June 2014
ASL5463
3.4
Plot of Noise Figure
1.4
1.2
NF (dB)
1
0.8
0.6
0.4
0.2
0
1500
6/10
1700
ASB Inc.

1900
2100
Frequency (MHz)
[email protected]
2300
2500
June 2014
ASL5463
3.5
Plots of Noise Figure and Performances with Temperature
55
Current (mA)
50
45
40
35
30
25
-60
25
-40
-20
0
20
40
Temperature (°C)
60
80
100
2
Frequency = 2000 MHz
1.5
15
NF (dB)
Gain (dB)
20
10
1
0.5
5
Frequency = 2000 MHz
0
0
-60
7/10
-40
-20
0
20
40
Temperature (°C)
60
80
100
ASB Inc.

-60
[email protected]
-40
-20
0
20
40
Temperature (°C)
60
80
100
June 2014
ASL5463
23
Frequency = 2000 MHz
P1dB (dBm)
21
19
17
15
-60
8/10
ASB Inc.

[email protected]
-40
-20
0
20
40
Temperature (°C)
60
80
100
June 2014
ASL5463
4. Package Outline (SOT363, 2.1x2.0x1.0 mm)
Symbols
A
A1
A2
b
C
D
F
E1
e
e1
L
Dimensions (In mm)
MIN
NOM
0.900
1.000
0.025
0.062
0.875
0.937
0.200
0.300
0.100
0.125
1.900
2.000
1.150
1.250
2.000
2.100
0.65BSC
1.30BSC
0.425REF
MAX
1.10
0.10
1.00
0.40
0.15
2.10
1.35
2.20
5. Surface Mount Recommendation (In mm)
0.20
1.30
0.45
1.00
2.00
9/10
ASB Inc.

[email protected]
June 2014
ASL5463
6. Recommended Soldering Reflow Profile
260 C
20~40 sec
Ramp-up
(3 C/sec)
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
(End of Datasheet)
10/10
ASB Inc.

[email protected]
June 2014
Similar pages