CDIL CC328PNP Pnp/npn silicon planar epitaxial transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
E
CC327, CC327A, CC328 (PNP)
CC337, CC337A, CC338 (NPN)
TO-92
BCE
CB
Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak
Emitter Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Ambient in Free Air
CC327
CC337
45
50
Tj, Tstg
CC327A
CC337A
60
60
5.0
500
1.0
1.0
100
200
625
5
-65 to +150
Rth(j-a)
200
VCE0
VCES
VEBO
IC
ICM
IEM
IB
IBM
PTA
CC328
CC338
25
30
UNITS
V
V
V
mA
A
A
mA
mA
mW
mW/deg C
deg C
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
CC327 CC327A
CC328 UNITS
CC337 CC337A
CC338
VCEO
IC=10mA,IB=0
>45
>60
>25
V
Collector -Emitter Voltage
VCES
IC=100uA.IE=0
>50
>60
>30
V
>5.0
VEBO
IE=10uA, IC=0
V
Emitter-Base Voltage
<100
ICBO
VCB=20V, IE=0
nA
Collector-Cut off Current
<5.0
VCB=20V, IE=0, Tj=150 deg C
uA
<10
IEBO
VEB=5V, IC=0
uA
Emitter Cut off Current
Continental Device India Limited
Data Sheet
Page 1 of 3
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
CC327 CC327A
CC328
CC337 CC337A
CC338
>40
hFE*
IC=500mA,VCE=1V
DC Current Gain
.
IC=100mA,VCE=1V 100-600
100-400 100-600
100-250
100-250
Group-16
160-400
160-400
Group-25
250-600
250-600
Group-40
<0.70
VCE(Sat) * IC=500mA,IB=50mA
Collector Emitter Saturation Voltage
<1.20
VBE(on) * IC=500mA,VCE=1V
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
Typ 200
ft
IC=10mA,VCE=5V
Transistors Frequency
NPN
Typ 100
f=35MHz
PNP
Typ 5.0
Cob
VCB=10V, f=1MHz
Out-Put Capacitance
NPN
Typ 8.0
PNP
*Pulse Test : Pulse Width =300us, Duty CYCLE=2%
UNITS
V
V
MHz
MHz
pF
pF
TO-92 Plastic Package
B
TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
A
M EC H AN IC AL D ATA
h
h
(p)
A1
3 2 1
D
C arrier
Strip
P
T
FEE
Ad hesive Tape o n Top Side
LA BE L
A
H1
FL AT SIDE
8.2"
W2
H0
L
Wo
W1
W
1 3"
K
t1
F1
t
F2
F
E
3
2
1
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
All diminsions in mm.
C
H
3 2 1
DIM
MIN.
MAX.
A
B
4.32
4.45
5.33
5.20
C
D
E
3.18
0.41
0.35
4.19
0.55
0.50
F
G
H
K
5 DEG
1.14
1.40
1.14
1.53
12.70
—
Flat S id e o f Tra nsis tor and
Ad hesive Tape V isible
20 00 pcs./A m m o P ack
All dim ensions in m m unless specified otherwise
ITEM
SEC AA
F
F
7"
Po
A A
G
1 .7
P2
D
D
Do
SYM BO L
BOD Y W IDT H
BOD Y H EIG HT
BOD Y T HICKNESS
PITCH OF COM PO NENT
FEED HO LE PITCH
A1
A
T
P
Po
FEED HO LE CENTR E TO
CO M PONENT CENTR E
P2
DISTAN CE BET WEEN O UTER
LEADS
CO M PONENT ALIGN M EN T
TAPE W IDTH
HO LD-D OW N TAPE W IDT H
HO LE PO SITIO N
F
h
W
Wo
W1
HO LD-D OW N TAPE PO SIT ION
LEAD W IRE CLINCH H EIG HT
CO M PONENT HEIGH T
LENG TH O F SNIPPED LEAD S
FEED HO LE DIAM ETER
TO TAL TAPE TH ICKNESS
LEAD - TO - LEAD DISTAN CEF1,
W2
Ho
H1
L
Do
t
F2
CLINC H HEIGH T
PULL - O UT FO RCE
H2
(P)
SPEC IFICAT ION
REM ARKS
M IN. NO M . M AX. TO L .
4.0
4.8
5.2
4.8
4.2
3.9
12.7
±1
12.7
± 0.3 CUM U LATIVE PIT CH
ERRO R 1.0 m m /20
PITCH
6.35
± 0.4 TO BE M EASURED AT
BOT TOM O F C LINCH
+0.6
5.08
-0.2
0
1
AT TO P OF BODY
18
± 0.5
6
± 0.2
9
+0.7
-0.5
0.5
± 0.2
16
± 0.5
23.25
11.0
4
± 0.2
1.2
t1 0.3 - 0 .6
2.54
+0.4
-0.1
3
6N
N OT ES
1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T TO B E G R E AT E R T H A N 0 .2 m m .
2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0
P IT C H E S .
3 . H O L D D O W N TA P E N O T T O E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O
E X P O S U R E O F A D H E S IV E .
4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D .
5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T.
6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .
Packing Detail
PACKAGE
STANDARD PACK
Net Weight/Qty
1K/polybag
200 gm/1K pcs
2K/ammo box
645 gm/2K pcs
Details
TO-92 Bulk
TO-92 T&A
Continental Device India Limited
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
5.0K
12.5" x 8" x 1.8"
2.0K
Data Sheet
OUTER CARTON BOX
Size
Qty
Gr Wt
17" x 15" x 13.5"
80.0K
23 kgs
17" x 15" x 13.5"
32.0K
12.5 kgs
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
[email protected]
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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