LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556 300 mW/°C °C/W mW R θ JA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C MMBD2836LT1 Forward Current CASE 318–08, STYLE 12 SOT– 23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBD2835LT1 = A3X;MMBD2836LT1=A2X ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol Min Max Unit V (BR) 35 — Vdc 75 — OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) MMBD2835LT1 MMBD2836LT1 Reverse Voltage Leakage Current (V R = 30 Vdc) MMBD2835LT1 IR — 100 (V R = 50 Vdc) MMBD2836LT1 — 100 CT — 4.0 pF VF — — — — 1.0 1.0 1.2 4.0 Vdc Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) (I F = 50 mAdc) (I F = 100 mAdc) Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC)= 1.0mAdc) (Figure 1) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. t rr nAdc ns G20–1/2 LESHAN RADIO COMPANY, LTD. MMBD2835LT1 MMBD2836LT1 +10 V 2.0 k 820 Ω 100 µH IF 0.1 µF tp tr 0.1µF IF t t rr 10% t 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR i IR INPUT SIGNAL V R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 10 I R, REVERSE CURRENT ( µA) T A = 85°C T A= –40°C 10 T A = 25°C 1.0 T A =150°C T A =125°C 1.0 T A =85°C 0.1 T A =55°C 0.01 T A =25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 1.75 C D , DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) 100 1.50 1.25 1.00 0.75 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G20–2/2