FCP7N60 / FCPF7N60 N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ Features • 650 V @ TJ = Description 150oC SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 530 mΩ • Ultra Low Gate Charge (Typ. Qg = 23 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Solar Inverter • AC-DC Power Supply D D GD S TO-220 G D S G TO-220F G TO-220F Y-formed S S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FCPF7N60 / FCPF7N60YDTU FCP7N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) 600 (Note 1) Unit V 7 4.4 7* 4.4* A A 21 21* A ± 30 V 230 mJ IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 4.5 V/ns 83 0.67 31 0.25 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP7N60 FCPF7N60 / FCPF7N60YDTU RθJC Thermal Resistance, Junction-to-Case, Max. 1.5 4.0 RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 1 Unit °C/W www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET November 2013 Part Number FCP7N60 Top Mark FCP7N60 FCPF7N60 FCPF7N60YDTU Package TO220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF7N60 TO220F Tube N/A N/A 50 units FCPF7N60 TO-220F (Y-formed) Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0 V, ID = 7 A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 0.53 0.6 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.5 A -- 6 -- S VDS = 25 V, VGS = 0 V, f = 1 MHz -- 710 920 pF -- 380 500 pF -- 34 -- pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz -- 22 29 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 60 -- pF VDD = 300 V, ID = 7 A, VGS = 10 V, RG = 25 Ω -- 35 80 ns -- 55 120 ns -- 75 160 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4) VDS = 480 V, ID = 7 A, VGS = 10 V (Note 4) -- 32 75 ns -- 23 30 nC -- 4.2 5.5 nC -- 11.5 -- nC 7 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7 A -- -- 1.4 V trr Reverse Recovery Time 360 -- ns Reverse Recovery Charge VGS = 0 V, IS = 7 A, dIF/dt =100 A/μs -- Qrr -- 4.5 -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 2 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 0 10 Notes : 1. 250μs Pulse Test 2. TC = 25°C -1 10 ID , Drain Current [A] ID, Drain Current [A] 1 10 150°C 25°C 0 10 -55°C Note 1. VDS = 40V 2. 250μs Pulse Test 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 0.0 1 10 0 10 150°C 25°C Notes : 1. VGS = 0V 2. 250μs Pulse Test Note : TJ = 25°C -1 0 5 10 15 10 20 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3000 0.8 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz Crss 10 10 VDS = 250V 10 VDS = 400V 8 6 4 2 Note : ID = 7A 0 1 0 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 1.6 VDS = 100V 2000 0 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd 0 -1 10 1.2 Figure 6. Gate Charge Characteristics Coss = Cds + Cgd 1000 1.0 VSD , Source-Drain Voltage [V] 3 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 3.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FCP7N60 2 2 10 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms DC 0 10 Notes : 1. TC = 25°C -1 10 100 150 200 Operation in This Area is Limited by R DS(on) 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC Notes : 1. TC = 25°C -1 10 2. TJ = 150°C 2. TJ = 150°C 3. Single Pulse 3. Single Pulse -2 10 50 Figure 9-2. Maximum Safe Operating Area for FCPF7N60 ID, Drain Current [A] ID, Drain Current [A] 10 0 TJ, Junction Temperature [°C] -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10.0 ID, Drain Current [A] 7.5 5.0 2.5 0.0 25 50 75 100 125 150 TC, Case Temperature [? ] ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 4 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) 10 0 D = 0 .5 0 .2 N o te s : 1 . Z θ J C (t) = 1 .5 ° C /W M a x. 0 .1 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T JM - T C = P D M * Z θ J C (t) 0 .0 2 0 .0 1 PDM θJC o ZθJC Z (t), (t),Thermal ThermalResponse Response[ C/W] Figure 11-1. Transient Thermal Response Curve for FCP7N60 10 -2 10 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 0 .1 N o te s : 1 . Z θ J C (t) 4 .0 ° C /W M a x. 0 .0 5 10 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 -1 0 .0 1 PDM θJC ZθJC Response [oC/W] Z (t),(t),Thermal Thermal Response Figure 11-2. Transient Thermal Response Curve for FCPF7N60 t1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 5 www.fairchildsemi.com 50KΩ 200nF 12V FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD V 10V GS GS ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 6 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 7 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 8 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 9 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Y-Formed Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3 ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 10 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2005 Fairchild Semiconductor Corporation FCP7N60 / FCPF7N60 Rev. C1 11 www.fairchildsemi.com FCP7N60 / FCPF7N60 — N-Channel SuperFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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