Diode Semiconductor Korea FR101---FR107 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage DO - 41 Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 101 FR 102 FR 103 FR 104 FR 105 FR 106 FR 107 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 30.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 5.0 IR 150 250 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ 12 Typical thermal resistance (Note3) RθJA 55 TJ - 55---- +150 TSTG - 55---- + 150 Operating junction temperature range Storage temperature range A 100.0 500 ns pF ／W NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr FR101---FR107 Diode Semiconductor Korea FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 (+) 50VDC (APPROX) (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASEFOR 50/100 ns /cm FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 100 10 TJ =25 Pulse Width=300µS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 .8 .6 .4 .2 0 25 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 14 12 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 75 100 125 150 175 200 FIG.5--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 20 50 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 16 Single Phase Half Wave 60HZ Resistive or Inductive Load 30 20 TJ=125 8.3ms Single Half Sine-Wave 10 0 1 100 10 NUMBER OF CYCLES AT 60 Hz www.diode.kr