MOTOROLA MRF18060AR3 Rf power field effect transistor Datasheet

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by MRF18060A/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET Line
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18060A
CASE 465A–06, STYLE 1
NI–780S
MRF18060ALSR3, MRF18060ASR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC ≥ 25°C
Derate above 25°C
PD
180
1.03
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.97
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.7
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
160
—
pF
Output Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
740
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.7
—
pF
11.5
13
—
43
45
—
—
—
–10
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz)
Gps
Drain Efficiency @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz)
η
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1805 – 1880 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
IRL
Ψ
dB
%
dB
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
2
MOTOROLA RF DEVICE DATA
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
T1
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF Chip Capacitor
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT–23
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″ Microstrip
1.16″ x 0.09″ Microstrip
0.57″ x 0.95″ Microstrip
0.59″ x 1.18″ Microstrip
1.26″ x 0.15″ Microstrip
1.15″ x 0.09″ Microstrip
0.37″ x 0.09″ Microstrip
Figure 1. 1805 – 1880 MHz Test Fixture Schematic
MRF18060
Figure 2. 1805 – 1880 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
3
$%&
ÎÎÎ
ÎÎÎ
ÎÎÎ
T1
T2
!!"#
Z4
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU–P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU–P (0805)
1 pF Chip Capacitor, ACCU–P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
'
T1
LP2951 Micro–8 Voltage Regulator
T2
BC847 SOT–23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon Glass, εr = 2.55
Figure 3. 1800 – 2000 MHz Demo Board Schematic
$%&
Î
ÎÎ
R5
MRF18060
Î
ÎÎ
ÎÎ
Î
ÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎ
Î
Î
Î
!!"#
'
ÎÎ
Î
ÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎ
Î
ÎÎ
Î
Î
MRF18060
Figure 4. 1800 – 2000 MHz Demo Board Component Layout
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
4
MOTOROLA RF DEVICE DATA
00
20
00 9
00 9
0
2
00 9
) :
3 ) ''0 567
'
0
+, *- .*/
00
*
0
0
) :
4 ) 00 9
0
0
*
0
08 *
0
0
'00
'0
0
0
*
0
) :
4 ) 00 9
'
0
- . /
''0
200
Figure 7. Output Power versus Frequency
'0
0
0
h
0
+
0
0
0
0
0
) :
4 ) 00 9
3 ) ''0 567
0
0
0
%, *- .*/
0
;
80
;
!
8
;
80
;'
8
; 0
80
; 8
; 80
'00
0
Figure 8. Output Power and Efficiency
versus Input Power
8
00
0
0
80
08
080
'
20
0
'0
'0
3, -4- .567/
! ,1*-1 1./
8 *
0
Figure 6. Output Power versus Supply Voltage
+ ,11*-1.*/
+ ,11*-1.*/
0
0
, % ) *
'0
% ) *
0
0
0
Figure 5. Power Gain versus
Output Power
20
'0
η,11- - 1.</
4 ) 0 9
200
3, -4- .567/
; ) :
4 ) 00 9
000
00
,11-11./
+ ,11*-1.*/
! ,1*-1 1./
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
; '
;0
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
5
3 ) 00 567
%
3 ) 00 567
3 ) 00 567
=
3 ) 00 567
)Ω
) f
MHz
Zin
, 4 ) 00 9, + ) 0 * *
ZOL*
Ω
Zin
Ω
1700
0.60 + j2.53
2.27 + j3.44
1800
0.80 + j3.20
2.05 + j3.05
1900
0.92 + j3.42
1.90 + j2.90
2000
1.07 + j3.59
1.64 + j2.88
2100
1.31 + j4.00
1.29 + j2.99
= Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load at a
given voltage, P1dB, gain, efficiency, bias
current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain,
output power, and drain efficiency.
!+
5&+:>%?
@+AB
+!+
5&+:>%?
@+AB
@C%:@
@ @ +
Z
in
Z
*
OL
Figure 10. Series Equivalent Input and Output Impedance
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
2X
1
Q
$$$
5
5
-D
8 5- - - 85; 228
8 5-D 68
8 ---
8 5- 6 5-- 0800 .08/ *
5 E - 8
5
3
B
K
2
(FLANGE)
D
$$$
5
5
5
M
$$$
N
R
(INSULATOR)
5
5
5
:::
5
5
5
&&&
5
5
S
(LID)
:::
5
5
(LID)
5
(INSULATOR)
5
H
C
F
E
T
A
A
SEATING
PLANE
4X U
(FLANGE)
1
K
2X
2
(FLANGE)
D
5
MILLIMETERS
MIN
MAX
82
8 28
282
8 '
8
8
8'
08'2
8 080'
08 821
8
80
8
8
28
282
280
0800
800
8
28
28
28
28
08 1-
081-
08' 1-
- D
8 8 8 -
-D
8 5- - - 85; 228
8 5-D 68
8 ---
8 5- 6 5-- 0800 .08/ *
5 E - 8
4X Z
(LID)
B
$$$
INCHES
MIN
MAX
8
8
08'0
0820
08 08 0
082
080
080
080
0800
0800
8 001
080
080
08 0
08 0
08
08'
08
08''
8 '
8 '
08
08
08
08
08001-
080 01-
080 1-
CASE 465–06
ISSUE F
NI–780
MRF18060A
(FLANGE)
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
5
5
N
(LID)
:::
M
R
5
5
5
:::
5
5
5
5
&&&
5
5
S
(INSULATOR)
$$$
5
(LID)
5
(INSULATOR)
5
INCHES
MIN
MAX
08'0
08' 08'0
0820
08 08 0
082
080
080
080
0800
0800
080
080
08 0
08 0
08
08'
08
08''
08
08
08
08
;;;
0800
;;;
0800
08001-
080 01-
080 1-
MILLIMETERS
MIN
MAX
08
080
28
282
8 '
8
8
8'
08'2
8 080'
08 8
80
8
8
28
080
28
080
28
28
28
28
;;;
80
;;;
08
08 1-
081-
08' 1-
- D
8 8 8 -
H
C
3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
F
E
A
T
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465A–06
ISSUE F
NI–780S
MRF18060ALSR3, MRF18060ASR3
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
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MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF18060A MRF18060AR3 MRF18060ALSR3
MRF18060ASR3
◊
8
MRF18060A/D
MOTOROLA RF DEVICE
DATA
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