LITE-ON SEMICONDUCTOR B170 thru B1100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0 For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications SMA A C B G H D F E MECHANICAL DATA DIM. MIN. MAX. A 4.06 4.57 B 2.29 2.92 C 1.27 1.63 D 0.15 0.31 E 4.83 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter Case : Molded plastic Polarity : Indicated by cathode band Weight : 0.002 ounces, 0.064 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current SYMBOL B170 B180 B190 B1100 UNIT VRRM VRMS VDC 70 49 70 80 56 80 90 63 90 100 70 100 V V V @TL =100 C I(AV) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC METHOD) IFSM 30 A Maximum forward Voltage at 1.0A DC @TJ =25 C @TJ =100 C VF Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =100 C IR 0.5 5.0 mA CJ 30 pF R0JL 25 C/W TJ -55 to +125 C TSTG -55 to +150 Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range 0.79 0.69 NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Lead. V C REV. 2, 01-Dec-2000, KSHA02 RATING AND CHARACTERISTIC CURVES B170 thru B1100 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 0.4 0.2 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0 20 40 60 80 90 100 120 140 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 30 20 10 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 10 20 50 100 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE , C FIG.4 - TYPICAL JUNCTION CAPACITANCE FIG.3 - TYPICAL FORWARD CHARACTERISTICS 1000 CAPACITANCE, (pF) 10 1.0 0.1 100 TJ = 25 C TJ = 25 C F= 1MHz PULSEWIDTH:300us .01 10 0 0.2 0.4 0.6 0.8 1.6 1.4 1.2 1.0 0.1 1.8 1.0 4.0 10.0 100 REVERSE VOLTAGE , (VOLTS) INSTANTANEOUS FORWARD VOLTAGE , (VOLTS) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT, (A) 5 10 TJ = 125 C 1.0 TJ = 100 C 0.1 TJ = 25 C 0.01 0.001 0 20 40 60 80 90 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) REV. 2, 01-Dec-2000, KSHA02