MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) MPS6602 and MPS6652 are Preferred Devices Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MPS6601/6651 MPS6602/6652 Collector −Base Voltage Vdc 25 40 NPN VCBO MPS6601/6651 MPS6602/6652 Emitter −Base Voltage Vdc 25 30 VEBO 4.0 Vdc Collector Current − Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE 2 BASE PNP 1 EMITTER TO−92 CASE 29−11 STYLE 1 1 2 1 EMITTER 3 THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. MARKING DIAGRAM MPS 66xy AYWW G G MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 4 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPS6601/D MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 25 40 − − 25 40 − − 4.0 − − − 0.1 0.1 − − 0.1 0.1 50 50 30 − − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO MPS6601/6651 MPS6602/6652 Vdc V(BR)CBO MPS6601/6651 MPS6602/6652 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) MPS6601/6651 MPS6602/6652 Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 Vdc Vdc mAdc ICES mAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) − 0.6 Vdc Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz Cobo − 30 pF td − 25 ns tr − 30 ns ts − 250 ns tf − 50 ns SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, tp w 300 ns Duty Cycle) Fall Time http://onsemi.com 2 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE t1 0.01 SINGLE PULSE 0.03 t2 0.02 0.01 0.001 RqJC(t) = (t) qJC RqJC = 100°C/W MAX RqJA(t)d = r(t) qJA RqJA = 357°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response TURN−ON TIME −1.0 V 5.0 ms 100 VCC +VBB +40 V +40 V 100 RL OUTPUT +10 V 0 TURN−OFF TIME VCC Vin tr = 3.0 ns OUTPUT RB Vin * CS t 6.0 pF 5.0 mF RL RB * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits http://onsemi.com 3 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN PNP 300 200 70 VCE = 1.0 V TJ = 25°C 50 30 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 100 10 100 VCE = 10 V TJ = 25°C f = 30 MHz 10 100 200 1000 300 200 100 70 50 VCE = −10 V TJ = 25°C f = 30 MHz 30 −10 −100 −200 −1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product −1.0 TJ = 25°C VBE(SAT) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) −1000 IC, COLLECTOR CURRENT (mA) 0.8 VBE(ON) @ VCE = 1.0 V 0.6 0.4 0 1.0 −100 Figure 4. MPS6651/6652 DC Current Gain 70 0.2 VCE = −1.0 V TJ = 25°C Figure 3. MPS6601/6602 DC Current Gain 100 1.0 50 IC, COLLECTOR CURRENT (mA) 200 30 70 IC, COLLECTOR CURRENT (mA) 300 50 100 20 −10 1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 200 100 0 −1.0 1000 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = −1.0 V −0.4 −0.2 VCE(SAT) @ IC/IB = 10 10 −0.6 TJ = 25°C VCE(SAT) @ IC/IB = 10 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. On Voltages Figure 8. On Voltages http://onsemi.com 4 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN PNP 80 160 TJ = 25°C 60 40 C, CAPACITANCE (pF) C, CAPACITANCE (pF) TJ = 25°C Cib 20 Cob 0 Cob Cib 5.0 1.0 15 20 10 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 120 80 Cib 40 0 25 5.0 Cob Cob Cib −5.0 −1.0 Figure 9. Capacitance VCE = 5.0 V f = 1.0 kHz TA = 25°C 6.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 8.0 IC = 100 mA 4.0 2.0 10 1k 100 8.0 6.0 IC = 100 mA 4.0 0 10 k 100 10 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure 10 k td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 1k 500 td @ VBE(off) = −0.5 V VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5k 3k t, TIME (NS) 5k 3k t, TIME (NS) VCE = −5.0 V f = 1.0 kHz TA = 25°C 2.0 10 k ts 200 100 1k 500 ts 200 100 50 tf 20 tr 10 −25 −5.0 Figure 10. Capacitance 10 0 −15 −20 −10 −2.0 −3.0 −4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 50 100 200 tf 50 500 tr td 20 td 1000 10 −10 −20 −50 −100 −200 −500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. MPS6601/6602 Switching Times Figure 14. MPS6651/6652 Switching Times http://onsemi.com 5 −1000 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) PNP −0.8 R qVB , TEMPERATURE COEFFICIENT (mV/° C) R qVB , TEMPERATURE COEFFICIENT (mV/° C) NPN −1.2 −1.6 RqVB for VBE −2.0 −2.4 −2.8 1.0 10 100 1000 −1.6 RqVB for VBE −2.0 −2.4 −2.8 −1.0 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 15. Base−Emitter Temperature Coefficient Figure 16. Base−Emitter Temperature Coefficient −1 k 1.0 MS 500 TC = 25°C 200 1.0 MS −500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) −1.2 IC, COLLECTOR CURRENT (mA) 1k 1.0 s TC = 25°C −200 100 1.0 s −100 50 MPS6601 MPS6602 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 5.0 10 20 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −20 −1.0 −2.0 −5.0 −10 −20 −40 VCE, COLLECTOR−EMITTER VOLTAGE VCE, COLLECTOR−EMITTER VOLTAGE Figure 17. Safe Operating Area Figure 18. Safe Operating Area −1.0 VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25°C 0.8 0.6 IC = 1000 mA 0.4 0.2 0 MPS6651 −50 −10 40 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) −0.8 IC = 50 mA IC = 10 mA 0.01 0.1 IC = 100 mA IC = 500 mA IC = 250 mA 1.0 10 100 TJ = 25°C −0.8 −0.6 IC = −1000 mA −0.4 −0.2 0 −0.01 IC = −10 mA IC = −50 mA −0.1 IC = −100 mA −1.0 IC = −500 mA IC = −250 mA −10 −100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region http://onsemi.com 6 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ORDERING INFORMATION Device Package MPS6601 TO−92 (TO−226) MPS6601G TO−92 (TO−226) (Pb−Free) MPS6601RLRA TO−92 (TO−226) MPS6601RLRAG TO−92 (TO−226) (Pb−Free) MPS6602 TO−92 (TO−226) MPS6602G TO−92 (TO−226) (Pb−Free) MPS6602RLRA TO−92 (TO−226) MPS6602RLRAG TO−92 (TO−226) (Pb−Free) MPS6651 TO−92 (TO−226) MPS6651G TO−92 (TO−226) (Pb−Free) MPS6652 TO−92 (TO−226) MPS6652G TO−92 (TO−226) (Pb−Free) MPS6652RLRA TO−92 (TO−226) MPS6652RLRAG TO−92 (TO−226) (Pb−Free) MPS6652RLRP TO−92 (TO−226) MPS6652RLRPG TO−92 (TO−226) (Pb−Free) Shipping † 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box 5000 Units / Box 2000 Units / Tape & Reel 2000 Units / Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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