MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • (No Suffix) Electrically Similar to Popular TIP47, and TIP50 Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS, 15 WATTS COLLECTOR 2, 4 1 BASE MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCEO Collector−Base Voltage MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCB Emitter−Base Voltage VEB 5 Vdc IC 1 Adc ICM 2 Adc Base Current IB 0.6 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 0.0125 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Continuous Collector Current − Peak 3 EMITTER Vdc 250 400 4 Vdc 350 500 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW JxxG A Y WW Jxx G = Assembly Location = Year = Work Week = Device Code xx = 47 or 50 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 15 1 Publication Order Number: MJD47/D MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Case Characteristic RqJC 8.33 °C/W Thermal Resistance Junction−to−Ambient (Note 2) RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering Purpose ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) MJD47, NJVMJD47T4G MJD50, NJVMJD50T4G VCEO(sus) Vdc 250 400 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) MJD47, NJVMJD47T4G (VCE = 300 Vdc, IB = 0) MJD50, NJVMJD50T4G ICEO Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) MJD47, NJVMJD47T4G (VCE = 500 Vdc, VBE = 0) MJD50, NJVMJD50T4G ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − − mAdc − 0.2 − 0.2 mAdc − 0.1 − 0.1 − 1 30 10 150 − − 1 − 1.5 10 − 25 − mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) fT Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz − MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 Vin 0 VEB(off) 1.5 15 0 50 75 100 125 Figure 2. Switching Time Equivalent Circuit 1.4 200 VCE = 10 V 1.2 TJ = 150°C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 60 40 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. TURN-OFF PULSE Figure 1. Power Derating 25°C 20 -55°C 10 1 VBE(sat) @ IC/IB = 5 0.8 VBE(on) @ VCE = 4 V 0.6 TJ = 25°C 0.4 6 4 2 0.02 0.2 0.2 0.4 0.6 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMPS) 2 1 0 0.02 VCE(sat) @ IC/IB = 5 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 1 0.7 0.5 Figure 4. “On” Voltages 0.1 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 2 0.2 0.2 0.03 1 D = 0.5 0.3 0.1 0.07 0.05 -4 V DUTY CYCLE ≈ 2% APPROX -9 V t2 150 T, TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Cjd << Ceb t1 ≤ 7 ns 10 < t2 < 500 ms t3 < 15 ns Vin 25 RB t1 APPROX +11 V 5 0 SCOPE Vin t3 TC 1 10 RC 51 TA (SURFACE MOUNT) 0.5 VCC TURN-ON PULSE APPROX +11 V 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G IC, COLLECTOR CURRENT (AMP) 5 2 1ms 1 0.5 500ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms dc TC ≤ 25°C 0.2 0.1 SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25°C WIRE BOND LIMIT MJD47 CURVES APPLY BELOW MJD50 RATED VCEO 0.05 0.02 0.01 0.005 5 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 6. Active Region Safe Operating Area 5 1 TJ = 25°C VCC = 200 V IC/IB = 5 ts 2 tr 0.2 1 t, TIME (s) μ t, TIME (s) μ 0.5 td 0.1 0.05 0.5 tf 0.2 0.1 0.02 0.01 0.02 TJ = 25°C VCC = 200 V IC/IB = 5 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 0.05 0.02 2 Figure 7. Turn−On Time 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) Figure 8. Turn-Off Time http://onsemi.com 4 1 2 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G ORDERING INFORMATION Package Shipping† MJD47G 369C (Pb−Free) 75 Units / Rail MJD47T4G 369C (Pb−Free) 2,500 / Tape & Reel NJVMJD47T4G* 369C (Pb−Free) 2,500 / Tape & Reel MJD50G 369C (Pb−Free) 75 Units / Rail MJD50T4G 369C (Pb−Free) 2,500 / Tape & Reel NJVMJD50T4G* 369C (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 5 MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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