ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F G2N7000 N-CHANNEL ENHANCEMENT MODE MOSFET Description The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Package Dimensions D TO-92 E A S1 b1 S E A T IN G PLANE L REF. e1 e A S1 b b1 C C b Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 REF. D E L e1 e Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage -Continuous -Non-repetitive (tp 50us) Drain Current -Continuous - Pulsed Power Dissipation Symbol Ratings Tj, Tstg -55 ~ +150 VDSS 60 V VGS ±20 V VGSM ±40 V ID IDM 200 500 mA Ta=25 R Thermal Resistance ,Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes,1/16” from case for 10 seconds Parameter Symbol V(BR)DSS 60 VGS(th) 0.8 Gate Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(ON) Static Drain-Source on-State Resistance Drain-Source on-Voltage RDS(ON) VDS(ON) 357 JA 300 Max. Unit - - V VGS=0, ID=250uA - 3.0 V VDS= VGS, ID=1.0mA - - ±100 nA VGS=±20V, VDS=0 - - 1 uA VDS=60V, VGS=0 75 - - mA VGS =4.5V ,VDS=10V - - 5.0 VGS=10V, ID=500mA - - 6.0 VGS=4.5V, ID=75mA - - 2.5 - - 0.45 GFS 100 - - Input Capacitance Ciss - - 60 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 Forward Transconductance G2N7000 /W unless otherwise noted) Typ. Gate Threshold Voltage W mW/ 2.8 TL Min. Drain-Source Breakdown Voltage 0.35 PD Derate above 25 Electrical Characteristics (Tc= 25 Unit V mS pF Test Conditions VGS=10V, ID=500mA VGS=4.5V, ID=75mA VDS=10 V, ID=200mA VDS=25V, VGS=0V, f=1MHz Page: 1/2 ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F Switching Characteristics (Note 1) Turn-on Delay Time ton - - 10 Turn-off Delay Time toff - - 10 Note 1. Pulse Test: Pulse Width ns VDD=15V, ID=500mA RG=25 , RL=30 , Vgen=10V 300us, Duty cycle 2%. Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N7000 Page: 2/2