ETL G2N7000 The g2n7000 is designed for high voltage, high speed applications such as switching regulators, converters solenoid and relay drivers. Datasheet

ISSUED DATE :2004/02/18
REVISED DATE :2006/10/30F
G2N7000
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters,
solenoid and relay drivers.
Package Dimensions
D
TO-92
E
A
S1
b1
S E A T IN G
PLANE
L
REF.
e1
e
A
S1
b
b1
C
C
b
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150
1.390
2.42
2.66
REF.
D
E
L
e1
e
Absolute Maximum Ratings at Ta = 25
Parameter
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
-Continuous
-Non-repetitive (tp 50us)
Drain Current
-Continuous
- Pulsed
Power Dissipation
Symbol
Ratings
Tj, Tstg
-55 ~ +150
VDSS
60
V
VGS
±20
V
VGSM
±40
V
ID
IDM
200
500
mA
Ta=25
R
Thermal Resistance ,Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes,1/16” from
case for 10 seconds
Parameter
Symbol
V(BR)DSS
60
VGS(th)
0.8
Gate Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(ON)
Static Drain-Source on-State Resistance
Drain-Source on-Voltage
RDS(ON)
VDS(ON)
357
JA
300
Max.
Unit
-
-
V
VGS=0, ID=250uA
-
3.0
V
VDS= VGS, ID=1.0mA
-
-
±100
nA
VGS=±20V, VDS=0
-
-
1
uA
VDS=60V, VGS=0
75
-
-
mA
VGS =4.5V ,VDS=10V
-
-
5.0
VGS=10V, ID=500mA
-
-
6.0
VGS=4.5V, ID=75mA
-
-
2.5
-
-
0.45
GFS
100
-
-
Input Capacitance
Ciss
-
-
60
Output Capacitance
Coss
-
-
25
Reverse Transfer Capacitance
Crss
-
-
5
Forward Transconductance
G2N7000
/W
unless otherwise noted)
Typ.
Gate Threshold Voltage
W
mW/
2.8
TL
Min.
Drain-Source Breakdown Voltage
0.35
PD
Derate above 25
Electrical Characteristics (Tc= 25
Unit
V
mS
pF
Test Conditions
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
VDS=10 V, ID=200mA
VDS=25V, VGS=0V, f=1MHz
Page: 1/2
ISSUED DATE :2004/02/18
REVISED DATE :2006/10/30F
Switching Characteristics (Note 1)
Turn-on Delay Time
ton
-
-
10
Turn-off Delay Time
toff
-
-
10
Note 1. Pulse Test: Pulse Width
ns
VDD=15V, ID=500mA
RG=25 , RL=30 , Vgen=10V
300us, Duty cycle 2%.
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G2N7000
Page: 2/2
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