BVDSS = 60 V RDS(on) typ = 2.8mΩ HRP35N06K ID = 210 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.8 mΩ (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 60 V Drain Current – Continuous (TC = 25℃) 210 A Drain Current – Continuous (TC = 100℃) 150 A IDM Drain Current – Pulsed 735 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 2590 mJ EAR Repetitive Avalanche Energy (Note 1) 25 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 250 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 1.67 W/℃ -55 to +175 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθCS Case-to-Sink RθJA Junction-to-Ambient Typ. Max. -- 0.6 0.5 -- -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRP35N06K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 3.6 V Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 2.8 3.5 mΩ Forward Transconductance VDS = 20, ID = 30 A -- 90 -- S VGS = 0 V, ID = 250 ㎂ 60 -- -- V VDS = 48 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ -- 7900 -- ㎊ -- 1300 -- ㎊ -- 900 -- ㎊ -- 2 -- Ω -- 90 -- ㎱ -- 140 -- ㎱ -- 250 -- ㎱ -- 110 -- ㎱ -- 190 -- nC -- 30 -- nC -- 77 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 30 A, RG = 6 Ω VDS = 48 V, ID = 30 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 210 ISM Pulsed Source-Drain Diode Forward Current -- -- 735 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 80 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 150 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=36A, VDD=45V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRP35N06K Electrical Characteristics TJ=25 °C HRP35N06K Typical Characteristics VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V 102 ID, Drain Current [A] ID, Drain Current [A] Top : 100 10 175oC 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 101 100 0.1 101 0 2 Figure 1. On Region Characteristics 3.4 6 8 VGS = 10V 3.2 3.0 2.8 100 10 25oC 175oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 2.6 0 90 180 270 360 0.1 0.0 450 0.4 0.8 1.2 1.6 2.0 VSD, Source-Drain Voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Ciss 10000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8000 6000 Coss 4000 * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 2000 0 10-1 VGS, Gate-Source Voltage [V] 12 12000 Capacitances [pF] 10 Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 4 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 8 6 4 2 VDS = 48V ID = 30A 0 100 101 0 30 60 90 120 150 180 210 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,December 2014 (continued) 2.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HRP35N06K Typical Characteristics 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 30 A 0.0 -100 200 -50 100 µs ID, Drain Current [A] DC 101 100 * Notes : 1. TC = 25 oC 200 150 120 90 60 30 2. TJ = 175 oC 3. Single Pulse 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZθJC(t), Thermal Response ID, Drain Current [A] 102 10-2 10-1 150 180 1 ms 10 ms 10 100 210 Operation in This Area is Limited by R DS(on) -1 50 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 103 0 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] D=0.5 10-1 * Notes : 1. ZθJC(t) = 0.6 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 0.05 PDM 0.02 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRP35N06K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRP35N06K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRP35N06K Package Dimension TO-220 (A) 9.90±0.20 0 .2 ±0 0 .6 4.50±0.20 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,December 2014 HRP35N06K Package Dimension TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,December 2014