BSS205N OptiMOS™2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 V DS • N-channel R DS(on),max • Enhancement mode • Super Logic level (2.5V rated) 2.5 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS205N SOT23 H6327: 3000 pcs/ reel SZs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.5 T A=70 °C 2.0 10 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=2.5 A, R GS=25 Ω 10.8 Reverse diode dv /dt dv /dt I D=2.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±12 V 0.5 W -55 ... 150 °C 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 [email protected] Unit 55/150/56 www.zpsemi.com 1 of 3 BSS205N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 , I D= 250 µA 20 - - Gate threshold voltage V GS(th) V DS=VGS , I D=11 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V μA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=1.95 A - 63 85 mΩ V GS=4.5 V, I D=2.5 A - 40 50 8.5 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both sides of the PCB. [email protected] www.zpsemi.com 2 of 3 BSS205N Parameter Values Symbol Conditions Unit min. typ. max. - 315 419 - 114 152 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=10 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 16 24 Turn-on delay time t d(on) - 5.80 - Rise time tr - 2.9 - Turn-off delay time t d(off) - 11.0 - Fall time tf - 2.4 - Gate to source charge Q gs - 0.65 0.9 Gate to drain charge Q gd - 0.4 0.6 Gate charge total Qg - 2.1 3.2 Gate plateau voltage V plateau - 2 - V - - 0.5 A - - 10 - 0.8 1.1 V - 10 - ns - 2.2 - nC V DD=10 V, V GS=4.5 V, I D=2.5 A, R G=6 Ω ns Gate Charge Characteristics V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr [email protected] T A=25 °C V GS=0 V, I F=2.5 A, T j=25 °C V R=10 V, I F=2.5 A, di F/dt =100 A/µs www.zpsemi.com 3 of 3