, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ45 N-Channel Enhancement-Mode Power Field-Effect Transistors GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER Drain-source voltage VDS Drain current (d.c.) ID Total power dissipation Plot Drain-source on-state resistance RDS(ON) MAX. 500 9,6 125 0,6 UNIT V A W n MECHANICAL DATA Dimensions in mm Net mass: 12 g "8,3* Pinning: 1 = Gate 2 = Drain 3 • Source 4,2 19,5 —10,9-* Fig.l 1,55 max 1,6-* U-11,8-*- TO3; drain connected to mounting base. Notes 1, Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDg) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors RATINGS Limiting values in accordance with the Absolute Maximum System SYMBOL PARAMETER VDS VDGR *VGS ID ID IDM Ptot Tstg TJ Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (d.c.) Drain current (d.c.) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS - MIN. Tmb= 25 °C T mb =100°C Tmb= 25 °C T m b = 25 °C — — - - -55 - RGS = 20 k« - MAX. UNIT 500 500 20 V V. 9,6 6,1 38 125 150 150 A A V A W "C °C THERMAL RESISTANCES From junction to mounting base From junction to ambient R thj-mb • 1,0 K/W = 35 K/W Rthj-a STATIC CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage VGS(TO) Gate threshold voltage Zero gate voltage drain current IDSS Zero gate voltage drain current IDSS Gate source leakage current IGSS RDS(ON) Drain-source on-state resistance VGS = 0 V; ID = 0,25 mA TYP. MAX. MIN. 500 2,1 VDS = VGS; ID = i m* 3,0 20 0,1 10 0,55 VDS = 500 V; VGS = 0 V; TJ = 25 °C VDs = 500V;VGs = OV;Tj= 125 °C VGs = ±20V;V D s = OV V G s=10V;I D =5A 4,0 250 1,0 100 0,6 UNIT V V MA mA nA n MAX. UNIT DYNAMIC CHARACTERISTICS T mb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. 8fs Forward transconductance V D s»25V;I D = 5A 2,7 5,0 - S QM Coss C,s, •don Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 3800 250 100 4900 400 170 Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30V; ID = 2,8 A; VGS = 10 V; RGS = son; Rgen = son 50 80 330 110 75 120 430 140 Internal drain inductance Measured from contact screw on header closer to source pin and centre of die Measured from source lead 6 mm from package to source bond pad pF PF pF ns ns ns ns nH *r tdoff tf Ld LS Internal source inductance - 5,0 12,5 - - nH REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 "C unless otherwise specified SYMBOL PARAMETER Continuous reverse drain current IDR Pulsed reverse drain current IDRM Diode forward on-voltage VSD trr Reverse recovery time Qrr Reverse recovery charge CONDITIONS T m b =25°C Tmb=2S°C IF =19,2 A; VGS = OV; Tj = 25°C lF = 9,6A;Tj = 25°C -dlp/dt = 100 A/MS; Tj = 25°C;VGS = OV; VR = 100 V MIN. - TYP. 1,3 MAX. 9,6 38 1,7 UNIT A A V 1200 ns 12 MC