Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET MTA7D0N01AV8 BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=11A RDSON(TYP) VGS=4.5V, ID=8A VGS=3V, ID=5A Features 16V 28A 12.5A 5.9mΩ 6.9mΩ 8.4mΩ • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTA7D0N01AV8 DFN3×3 Pin 1 G：Gate D：Drain S：Source Ordering Information Device Package DFN3×3 MTA7D0N01AV8-0-T6-G (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTA7D0N01AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current ID IDSM IDM IAS EAS Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω TC=25℃ TC=100℃ TA=25℃ TA=70℃ Total Power Dissipation PD PDSM Operating Junction and Storage Temperature Range Tj, Tstg Limits 16 ±10 28 17.7 12.5 10 112 *1 21 22 12.5 5 2.5 *2 1.6 *2 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 10 50 *2 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 MTA7D0N01AV8 Min. Typ. Max. 16 0.5 - 0.73 18 5.9 6.9 8.4 1.0 ±100 1 5 8.5 9.8 12 8.5 - 853 209 171 11.5 1.9 3.9 15 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=11A VGS=±8V VDS =16V, VGS =0V VDS =16V, VGS =0V, Tj=55°C VGS =10V, ID=11A VGS =4.5V, ID=8A VGS =3V, ID=5A pF VDS=10V, VGS=0V, f=1MHz nC VDS=15V, VGS=4.5V, ID=20A CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 VSD *1 trr Qrr Min. 2.5 Typ. 9.4 22.4 36.6 18.4 5.4 14.4 39.2 9.4 4.0 Max. 14.1 33.6 54.9 27.6 8.1 21.6 58.8 14.1 5 Unit - 0.9 12.8 5.8 28 1.2 - A Test Conditions ns VDS=12.5V, ID=20A, VGS=4.5V, RGS=2Ω ns VDS=15V, ID=20A, VGS=10V, RGS=3Ω Ω f=1MHz V ns nC IS=16A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature Recommended Soldering Footprint unit : mm MTA7D0N01AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 90 ID, Drain Current(A) 80 10V,9V,8V,7V,6V,5V,4V 70 3.5V 60 50 3V 40 30 2.5V 20 1.2 1 0.8 ID=250μA, VGS=0V VGS=2V 10 0.6 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=3V 10 VGS=10V 1 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 90 R DS(ON), Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=11A 80 70 60 50 40 30 20 10 2 VGS=4.5V, ID=8A RDSON@Tj=25°C : 6.9mΩ typ. 1.6 1.2 0.8 VGS=10V, ID=11A RDSON@Tj=25°C : 5.9mΩ typ. 0.4 0 0 0 MTA7D0N01AV8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.8 1.6 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 100 0 3 6 9 12 VDS, Drain-Source Voltage(V) -75 -50 -25 15 50 75 100 125 150 175 Gate Charge Characteristics 100 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=15V 8 VDS=12.5V 6 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 14 ID, Maximum Drain Current(A) 1000 RDS(ON) Limit ID, Drain Current(A) 0 100 100μs 10 1ms 10ms 100ms 1 TA=25°C, Tj=150°C, VGS=10V RθJA =50°C/W, Single Pulse DC 1s 12 10 8 6 4 TA=25°C, VGS=10V, RθJA =50°C/W Single Pulse 2 0 0.1 0.01 MTA7D0N01AV8 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junctione Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics 90 300 80 VDS=5V TJ(MAX) =150°C TA=25°C RθJA =50°C/W 250 70 60 Power (W) ID, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 40 200 150 100 30 20 50 10 0 0 1 2 3 VGS, Gate-Source Voltage(V) 4 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTA7D0N01AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTA7D0N01AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTA7D0N01AV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 9/9 DFN3×3 Dimension Marking: D D D D A7D0 N01A Date Code S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Millimeters Min. Max. 0.605 0.850 0.152 REF 0.000 0.050 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA7D0N01AV8 CYStek Product Specification