Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0735, -0736 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.4 GHz • 13.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package Description The MSA-0735 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9591E OUT MSA Vd = 4.0 V 6-394 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. MSA-0735, -0736 Absolute Maximum Ratings Absolute Maximum[1] 60 mA 275 mW +13 dBm 200°C –65 to 200°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 157°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Ths small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 1.3 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. Max. dB 12.5 13.5 14.5 dB ± 0.6 ± 1.0 GHz 2.4 Input VSWR f = 0.1 to 2.5 GHz 2.0:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 3.6 4.0 4.4 –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0735 MSA-0736-BLK MSA-0736-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-395 MSA-0735, -0736 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA) S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .13 .13 .14 .16 .19 .21 .27 .32 .37 .43 .47 .49 .51 .60 S21 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang –3 –6 –13 –20 –29 –40 –71 –107 –134 –160 –179 167 134 96 13.5 13.4 13.4 13.3 13.2 12.9 12.2 11.5 10.3 8.8 7.5 6.2 4.0 2.1 4.71 4.69 4.68 4.64 4.60 4.42 4.07 3.74 3.26 2.76 2.37 2.05 1.59 1.27 175 170 160 150 140 129 104 79 62 44 27 12 –15 –42 –19.0 –18.5 –18.6 –18.4 –18.1 –17.6 –16.5 –15.6 –15.3 –15.4 –15.3 –15.2 –15.2 –14.6 .112 .119 .118 .120 .125 .131 .149 .165 .173 .171 .173 .168 .173 .185 2 3 6 7 8 10 10 7 5 0 –4 –6 –11 –16 .29 .29 .29 .28 .28 .27 .24 .19 .15 .14 .16 .21 .28 .29 –7 –12 –24 –35 –47 –58 –83 –103 –113 –120 –120 –121 –135 –167 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 14 40 12 30 8 Id (mA) G p (dB) 10 6 16 TC = +125°C TC = +25°C TC = –55°C G p (dB) Gain Flat to DC 20 12 2.0 GHz 10 10 2 6 0 0 0.1 0.3 0.5 1.0 3.0 6.0 4 0 1 2 3 4 10 5 Figure 1. Typical Power Gain vs. Frequency, Id = 22 mA. 6.0 I d = 40 mA 12 GP 4 6 P1 dB I d = 15 mA I d = 22 mA I d = 40 mA 9 6 NF (dB) 5 P1 dB (dBm) 5.5 6 NF (dB) NF 40 Figure 3. Power Gain vs. Current. 15 13 30 I d (mA) Figure 2. Device Current vs. Voltage. 14 12 20 Vd (V) FREQUENCY (GHz) G p (dB) 0.1 GHz 0.5 GHz 1.0 GHz 8 4 P1 dB (dBm) 14 I d = 22 mA 5.0 3 4.5 5 0 4 3 –55 –25 I d = 15 mA +25 +85 +125 –3 0.1 4.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=22mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-396 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS A07 RF INPUT 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 GROUND .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 6-397