NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -12V Features ID Max RDS(ON) Max TA = +25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A 0.6mm Profile – Ideal For Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed ESD Protected to 3KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMP1022UFDEQ) Description Mechanical Data This MOSFET is designed specifically for use in battery management applications. Case: U-DFN2020-6 (Type E) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type E) Pin1 D 6 D D 1 5 D D 2 4 S S G 3 ESD PROTECTED G Gate Protection Diode Pin Out Bottom View Bottom View S Internal Schematic Ordering Information (Note 4) Part Number DMP1022UFDE-7 Notes: Marking P4 Reel Size (inches) 7 Quantity Per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year Code Month Code 2011 Y ~ ~ Jan 1 Feb 2 DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 2015 C Mar 3 2016 D Apr 4 YM P4 P4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) 2017 E May 5 2018 F Jun 6 1 of 8 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N 2023 K Dec D October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF DMP1022UFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) ID -11.2 -9.0 -90 -2.5 -7.1 -50 ID IDM TA = +25°C TC = +25°C Continuous Source-Drain Diode Current Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) Value -12 ±8 -9.1 -7.2 IS ISM Unit V V A A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: Symbol TA = +25°C TA = +70°C Steady State t<5s TA = +25°C TA = +70°C Steady State t<5s Steady State PD RθJA PD RθJA RθJC TJ, TSTG Value 0.66 0.42 189 123 2.03 1.3 61 40 9.3 -55 to +150 Unit W °C/W W °C/W °C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 2 of 8 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Zero Gate Voltage Drain Current (TJ = +55°C) (Note 8) Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH)Temperature Coefficient On-State Drain Current Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time BODY DIODE CHARACTERISTICS Diode Forward Voltage Symbol Min Typ Max Unit BVDSS IDSS IDSS IGSS -12 — — — — — — — — -200 -2 ±2 V nA µA µA VGS(TH) ΔVGS(TH)/ΔTJ ID(ON) -0.35 — -10 RDS(ON) — |Yfs| VSD — — — 2.5 — 12 15 20 23 80 12 -0.8 -0.8 — — 16 21.5 26 32 160 — -1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — 2,953 756 678 8.6 28.4 25.3 2.3 7.2 20 28 117 93 — — — 18 42.6 38 — — 30 42 176 139 — — — — — — — — -0.8 — — — 28 10 18 13 -1.2 -2.5 -7.1 -50 56 — — 26 tD(ON) tR tD(OFF) tF VSD Continuous Source-Drain Diode Current (Note 6) IS Pulse Diode Forward Current (Note 8) Body Diode Reverse Recovery Time (Note 8) Reverse Recovery Fall Time Reverse Recovery Rise Time Body Diode Reverse Recovery Charge (Note 8) ISM tRR tA tB QRR Notes: DMP1022UFDE Test Condition VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VDS = -12V, VGS = 0V VGS = ±5V, VDS = 0V V VDS = VGS, ID = -250μA mV/°C ID = -250μA A VGS = -4.5V, VDS < -5A VGS = -4.5V, ID = -8.2A VGS = -2.5V, ID = -7.2A mΩ VGS = -1.8V, ID = -6.6A VGS = -1.5V, ID = -1A VGS = -1.2V, ID = -1A S VDS = -4V, ID = -8.2A V VGS = 0V, IS = -8A pF VDS = -4V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = -5V, VDS = -4V, ID = -10A nC VGS = -4.5V, VDS = -4V, ID = -10A ns V A ns VDS = -4V, VGS = -4.5V, RG = 1Ω, RL = 0.4Ω, ID = -9.8A VGS = 0V, IS = -9.8A TA = +25°C TC = +25°C — IS = -9.8A, dI/dt = 100A/μs nC 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 3 of 8 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF 100 DMP1022UFDE 100 PEAKTRANSIENT TRANSIENTPOWER POIWER(W) (W) PP(PK) , ,PEAK (PK) -ID, DRAIN CURRENT (A) PW = 10µs RDS(on) Limited 10 DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms PW = 100祍 100µs 0.1 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 90 Single Pulse RJA = 61 C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation 100 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t)=r(t) * RJA RJA=61癈 /W 61°C/W Duty Cycle, D=t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 0.001 0.01 0.1 1 t1, t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) Fig. 3 Transient Thermal Resistance 4 of 8 www.diodes.com 10 100 1,000 October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF 30 DMP1022UFDE 20 VGS = -8.0V VDS = -5.0V VGS = -4.5V 16 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -2.0V 20 VGS = -1.8V 15 VGS = -1.5V 10 12 8 TA = 150C 4 5 TA = 125C TA = -55C VGS = -1.2V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 4 Typical Output Characteristics 5 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.3 1.1 0.9 0.7 Datasheet number: DS35477 Rev. 12 - 3 3.0 VGS= -4.5V 0.025 0.020 TA = 150C TA = 125C 0.015 TA = 85C TA = 25C 0.010 TA = -55C 0.005 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.03 VGS = -2.5V ID = -5A 0.02 VGS = -4.5V ID = -10A 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 8 On-Resistance Variation with Temperature DMP1022UFDE 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristics 0.030 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.5 0.5 -50 0 30 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE( ) RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0 TA = 85C TA = 25C 5 of 8 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 9 On-Resistance Variation with Temperature October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF 20 1.2 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.4 1.0 0.8 0.6 0.4 16 12 8 4 0.2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (° (癈 C)) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 4,000 3,500 f = 1MHz )A n ( T N 10,000 E R R U C E G A K A 1,000 E L ,S 3,000 Ciss 2,500 2,000 1,500 1,000 Coss -I 500 TA = 150°C TA = 125°C TA = 85°C S D Crss 0 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 100,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) DMP1022UFDE 0 3 6 9 12 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Junction Capacitance TA = 25°C 15 100 0 2 4 6 8 10 12 -VDS , DRAIN-SOURCE VOLTAGE(V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage VGS, GATE-SOURCE VOLTAGE (V) 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 6 of 8 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF DMP1022UFDE Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) A3 A1 A D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e U-DFN2020-6 (Type E) Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 K2 0.225 Z 0.20 All Dimensions in mm b(6X) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) Dimensions Y3 Y2 X2 Y1 X1 X (6x) DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 7 of 8 www.diodes.com October 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF DMP1022UFDE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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