BAT24-02LS Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package BAT24-02LS 1 2 Type BAT24-02LS Package TSSLP-2-1 Configuration single, leadless Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Symbol LS(nH) Marking 0.2 ±0.05 S Value Unit Diode reverse voltage VR 4 V Forward current IF 110 mA Total power dissipation Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 TS ≤ 73 °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 770 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 2011-06-15 BAT24-02LS Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR) 4 - - V IR - - 5 µA DC Characteristics Breakdown voltage I(BR) = 10 µA Reverse current VR = 1 V Forward voltage V VF IF = 1 mA 0.16 0.23 0.32 IF = 10 mA 0.25 0.32 0.41 CT - 0.2 0.23 pF RF - 8 10 Ω AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA / 50 mA 2 2011-06-15 BAT24-02LS Diode capacitance CT = ƒ (VR) Diode capacitance CT = ƒ(TA) f = 1MHz, TA = 25 °C VR = 0 V, f = 1MHz 0.3 0.3 pF pF 0.24 0.2 CT CT 0.26 0.22 0.2 0.15 0.18 0.1 0.16 0.14 0.05 0.12 0 0 1 V 2 0.1 -50 4 -25 0 25 50 °C VR 100 TA Differential forward resistance RF = ƒ (TA ) Reverse current IR = ƒ (TA) IF = 10 mA / 50 mA VR = 1 V 10 -4 10 A Ohm 10 -5 8 IR RF 7 6 10 -6 5 10 -7 4 3 10 -8 2 1 0 -50 -25 0 25 50 °C 10 -9 -50 100 TA -25 0 25 50 °C 100 TA 3 2011-06-15 BAT24-02LS Reverse current IR = ƒ(VR ) Forward Voltage VF = ƒ (TA) TA = 25 °C IF = Parameter 10 -5 0.5 V 0.4 A 10mA IR VF 0.35 10 -6 0.3 1mA 0.25 0.2 100µA 0.15 0.1 0.05 10 -7 0 1 V 2 0 -50 4 -25 0 25 50 VR °C 100 TA Forward current IF = ƒ (VF) Forward current IF = ƒ (TS ) TA = 25 °C 10 -1 A 120 mA 10 -2 100 90 10 -3 IF IF 80 10 -4 70 60 10 -5 50 40 10 -6 30 20 10 -7 10 10 -8 0 0.2 0.4 0.6 V 0 0 1 VF 15 30 45 60 75 90 105 120 °C 150 TS 4 2011-06-15 Package TSSLP-2-1 5 BAT24-02LS 2011-06-15 BAT24-02LS Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-06-15