Infineon BAT2402LSE6327 Silicon schottky diode Datasheet

BAT24-02LS
Silicon Schottky Diode
• RF Schottky diode for mixer applications
up to 26 GHz
• Extremely low inductance combined with
ultra low device capacitance
• Very stable performance for all major parameters
• Package size: 0.62 x 0.31 x 0.31 mm³ only
• Pb-free (RoHS compliant) package
BAT24-02LS
1
2
Type
BAT24-02LS
Package
TSSLP-2-1
Configuration
single, leadless
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
LS(nH)
Marking
0.2 ±0.05 S
Value
Unit
Diode reverse voltage
VR
4
V
Forward current
IF
110
mA
Total power dissipation
Ptot
100
mW
Junction temperature
Tj
150
°C
Operating temperature range
Top
-55 ... 150
Storage temperature
Tstg
-55 ... 150
TS ≤ 73 °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
≤ 770
K/W
1For
calculation of RthJA please refer to Application Note Thermal Resistance
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2011-06-15
BAT24-02LS
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)
4
-
-
V
IR
-
-
5
µA
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 1 V
Forward voltage
V
VF
IF = 1 mA
0.16
0.23
0.32
IF = 10 mA
0.25
0.32
0.41
CT
-
0.2
0.23
pF
RF
-
8
10
Ω
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 10 mA / 50 mA
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BAT24-02LS
Diode capacitance CT = ƒ (VR)
Diode capacitance CT = ƒ(TA)
f = 1MHz, TA = 25 °C
VR = 0 V, f = 1MHz
0.3
0.3
pF
pF
0.24
0.2
CT
CT
0.26
0.22
0.2
0.15
0.18
0.1
0.16
0.14
0.05
0.12
0
0
1
V
2
0.1
-50
4
-25
0
25
50
°C
VR
100
TA
Differential forward resistance RF = ƒ (TA )
Reverse current IR = ƒ (TA)
IF = 10 mA / 50 mA
VR = 1 V
10 -4
10
A
Ohm
10 -5
8
IR
RF
7
6
10 -6
5
10 -7
4
3
10 -8
2
1
0
-50
-25
0
25
50
°C
10 -9
-50
100
TA
-25
0
25
50
°C
100
TA
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BAT24-02LS
Reverse current IR = ƒ(VR )
Forward Voltage VF = ƒ (TA)
TA = 25 °C
IF = Parameter
10 -5
0.5
V
0.4
A
10mA
IR
VF
0.35
10 -6
0.3
1mA
0.25
0.2
100µA
0.15
0.1
0.05
10 -7
0
1
V
2
0
-50
4
-25
0
25
50
VR
°C
100
TA
Forward current IF = ƒ (VF)
Forward current IF = ƒ (TS )
TA = 25 °C
10 -1
A
120
mA
10 -2
100
90
10 -3
IF
IF
80
10 -4
70
60
10
-5
50
40
10 -6
30
20
10 -7
10
10
-8
0
0.2
0.4
0.6
V
0
0
1
VF
15
30
45
60
75
90 105 120 °C
150
TS
4
2011-06-15
Package TSSLP-2-1
5
BAT24-02LS
2011-06-15
BAT24-02LS
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-06-15
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