POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - [email protected] HIGH CURRENT PHASE CONTROL THYRISTOR INSULATED MODULE AZT800 Repetitive voltage up to Mean forward current Surge current 800 V 808 A 30 kA FINAL SPECIFICATION May 17 - Issue: 3 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 800 V V RSM Non-repetitive peak reverse voltage 125 900 V V DRM Repetitive peak off-state voltage 125 800 V I RRM Repetitive peak reverse current 125 70 mA I DRM Repetitive peak off-state current 125 70 mA I T (AV) Mean forward current 180° sin, 50 Hz, Tc=55°C, double side cooled I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled I TSM Surge forward current CONDUCTING 1223 125 A 808 A 30 kA I² t I² t Sine wave, 10 ms without reverse voltage V T On-state voltage On-state current = V T(TO) Threshold voltage 125 0,82 V r T On-state slope resistance 125 0,180 mohm 3 4500 x 10 1800 A 25 1,34 A²s V SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1050 A; gate 10V, 5W 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10W , tr=.5 µs 25 t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM Q rr Reverse recovery charge di/dt = -20 A/µs, I= 700 A I rr Peak reverse recovery current VR= 50 V I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA V GT Gate trigger voltage VD=5V 25 3,50 V I GT Gate trigger current VD=5V 25 300 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation 150 W P G Average gate power dissipation 2 W R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T j Operating junction temperature 3 250 125 µs µs µC A GATE Pulse width 100 µs MOUNTING F 42,0 °C/kW 10 °C/kW -30 / 125 °C Mounting force 04,0 / 06,0 kN Mass 2800 ORDERING INFORMATION : AZT800 S 08 standard specification VRRM/100 g AZT800 HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 130 120 110 100 90 80 70 60 50 30° 60° 90° 120° 180° DC 40 0 200 400 600 800 1000 1200 1400 1600 IT(AV) [A] PF(AV) [W] 1800 DC 180° 1600 120° 1400 60° 1200 90° 30° 1000 800 600 400 200 0 0 200 400 600 800 IT(AV) [A] 1000 1200 1400 1600 AZT800 HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 130 120 110 100 90 80 70 60 50 30° 60° 90° 120° 180° 40 0 200 400 600 800 1000 1200 1400 IT(AV) [A] PF(AV) [W] 1800 120° 1600 180° 90° 60° 30° 1400 1200 1000 800 600 400 200 0 0 200 400 600 IT(AV) [A] 800 1000 1200 1400 AZT800 HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 4000 35 3500 30 25 2500 ITSM [kA] Forward Current [A] 3000 2000 1500 20 15 10 1000 5 500 0 0 0 0,5 1 1,5 2 1 10 Forward Voltage [V] 100 n° cycles 177 79.5 90 4 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED G-K Terminali A 2.8x0.8 45 40 104 70 35 Ø6 .5 46 30 58 Zth j-h [°C/kW] 1 2 70 3 Ø1 30 25 V5 80 20 92 15 10 K 5 0 0,001 2 0,01 0,1 1 10 G 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 1