DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 18 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD81 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Available in ammo-pack. MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS UNIT BYD73A − 50 V BYD73B − 100 V BYD73C − 150 V BYD73D − 200 V BYD73E − 250 V BYD73F − 300 V BYD73G − 400 V − 50 V continuous reverse voltage BYD73B − 100 V BYD73C − 150 V BYD73D − 200 V BYD73E − 250 V BYD73F − 300 V BYD73G − 400 V average forward current BYD73A to D BYD73E to G IF(AV) MAX. repetitive peak reverse voltage BYD73A IF(AV) MIN. average forward current BYD73A to D BYD73E to G 1996 Sep 18 Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 2 − 1.75 A − 1.70 A − 1.00 A − 0.95 A Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM IFRM BYD73 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Ttp = 55 °C; see Figs 6 and 7 BYD73A to D − 14 A BYD73E to G − 15 A repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYD73A to D − 8.5 A BYD73E to G − 9.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 25 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 0.75 V − − 0.83 V − − 0.98 V − − 1.05 V ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD73A to D CONDITIONS IF = 1 A; Tj = Tj max; see Figs 12 and 13 BYD73E to G VF forward voltage BYD73A to D IF = 1 A; see Figs 12 and 13 BYD73E to G V(BR)R IR trr reverse avalanche breakdown voltage IR = 0.1 mA BYD73A 55 − − V BYD73B 110 − − V BYD73C 165 − − V BYD73D 220 − − V BYD73E 275 − − V BYD73F 330 − − V BYD73G 440 − − V VR = VRRMmax; see Fig.14 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.14 − − 100 µA − − 25 ns − − 50 ns reverse current reverse recovery time BYD73A to D BYD73E to G 1996 Sep 18 UNIT when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd BYD73 series PARAMETER diode capacitance CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 BYD73A to D BYD73E to G dI R -------dt maximum slope of reverse recovery current BYD73A to D BYD73E to G when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.17 MIN. TYP. MAX. UNIT − 50 − pF − 40 − pF − − 4 A/µs − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 60 K/W 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series GRAPHICAL DATA MGC535 handbook, halfpage MGC536 handbook, halfpage 2.0 2.0 IF(AV) IF(AV) (A) (A) 1.6 1.6 lead length 10 mm 1.2 1.2 0.8 0.8 0.4 0.4 0 lead length 10 mm 0 100 0 Ttp ( oC) 200 100 0 BYD73A to D a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYD73E to G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Ttp ( oC) 200 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MGC537 MGC538 1.6 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0 100 Tamb ( oC) 0 200 100 BYD73A to D a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. BYD73E to G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. Switched mode application. Fig.4 Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 Sep 18 5 Tamb ( oC) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series MCD605 16 handbook, full pagewidth I δ= 0.05 FRM (A) 0.1 8 0.2 0.5 1 0 10 −2 10 −1 1 10 10 2 10 3 t p (ms) 10 4 BYD73A to D Ttp = 55 °C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD607 handbook, 16 full pagewidth I δ= 0.05 FRM (A) 0.1 8 0.2 0.5 1 0 10 -2 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73E to G Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series MCD604 10 handbook, full pagewidth δ= 0.05 I FRM (A) 0.1 5 0.2 0.5 1 0 10 -2 10 -1 1 10 10 2 10 3 10 4 t p (ms) BYD73A to D Tamb = 60 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD606 handbook, 10 full pagewidth δ= 0.05 I FRM (A) 0.1 5 0.2 0.5 1 0 -2 10 10 -1 1 10 10 2 10 3 t p (ms) 10 4 BYD73E to G Tamb = 60 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 7 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series MGC540 MGC539 2 2 handbook, halfpage handbook, halfpage 2.5 2 1.57 1.42 a=3 a=3 2.5 2 1.57 1.42 P (W) P (W) 1 1 0 0 0 1 IF(AV) (A) 0 2 BYD73A to D a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 1 2 IF(AV) (A) BYD73E to G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MCD594 MGC531 10 10 handbook, halfpage handbook, halfpage IF (A) IF (A) 8 8 6 6 4 4 2 2 0 0 0 1 VF (V) 2 0 1 2 VF (V) 3 BYD73A to D Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYD73E to G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward voltage; maximum values. Fig.13 Forward current as a function of forward voltage; maximum values. 1996 Sep 18 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series MGA853 3 10halfpage handbook, MCD608 2 10 handbook, halfpage IR (µA) Cd (pF) 102 10 A, B, C, D 10 E, F, G 1 100 0 T j ( o C) 1 200 1 10 2 10 10 3 V R (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.14 Reverse current as a function of junction temperature; maximum values. Fig.15 Diode capacitance as a function of reverse voltage; typical values. 50 handbook, halfpage 25 IF halfpage andbook, dI F dt 7 t rr 50 10% t dI R dt 100% 2 IR MGC499 3 MGA200 Dimensions in mm. Fig.16 Device mounted on a printed-circuit board. 1996 Sep 18 Fig.17 Reverse recovery definitions. 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers handbook, full pagewidth BYD73 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 Sep 18 10 MAM057 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD73 series PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 max 28 min 3.8 max 28 min MBC051 Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD81. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 11