ASB ASX1037HG X band power amplifier mmic Datasheet

ASX1037HG
ASX1037HG Data Sheet
X Band Power Amplifier MMIC
1. Product Overview
1.1 General Description
ASX1037HG is a two-stage internally matched MMIC Power Amplifier which operates between 8.0 GHz
and 10.5 GHz frequency range. This product is well suited for X band applications.
1.2 Features
 Frequency Range: 8.5 - 10.5 GHz
 Saturated Output Power: 36 dBm
 Power Added Efficiency: 39 %
 Power Gain: 18 dB
 Small Signal Gain: 22 dB
 Output Third Order Intercept Point: 42 dBm
 Bias: VDD = +7 V, IDD = 1300 mA, VGG = -0.95 V (Typical)
100% DC and RF tested
1.3 Applications
 Point to Point Radio
 Communications
1.4 Package Profile & RoHS Compliance
10-lead Flange Package
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ASX1037HG
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Gate Bias Voltage
Output Power at
Power Gain at
f = 8.5 - 10.5 GHz
Psat1)
Psat1)
Drain Current at
Min
Psat1)
Typ
Max
Units
-0.95
-0.5
V
f = 8.5 - 10.5 GHz
35
36
dBm
f = 8.5 - 10.5 GHz
17
18
dB
f = 8.5 - 10.5 GHz
1700
f = 8.5 - 10.5 GHz
39
%
Small Signal Gain
f = 8.5 - 10.5 GHz
22
dB
Gain Flatness
f = 8.5 - 10.5 GHz
1.5
2.0
dB
Input Return Loss
f = 8.5 - 10.5 GHz
-14
-9
dB
Output Return Loss
f = 8.5 - 10.5 GHz
Δf = 10 MHz
2-Tone Test
Output power / Tone = +26 dBm
VDD = +7 V
-14
-9
dB
Power Added Efficiency at
Psat1)
Output TOI2)
Supply Current
2000
mA
42
dBm
1300
mA
1) Psat: Saturated output power
2) TOI: Third order intercept point
2.2 Product Specifications
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -0.95 V typical, ZO = 50 
Parameters
Min
Typ
Max
Frequency
8.5
Small Signal Gain
20
10.5
22
Unit
GHz
dB
Input Return Loss
-14
-9
dB
Output Return Loss
-14
-9
dB
Supply Current
1300
mA
2.3 Absolute Maximum Ratings
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Parameters
Max. Ratings
Operation Case Temperature (Tc)
-40 to 85 C
Storage Temperature (Tstg)
-55 to 125 C
Drain Voltage (VDD)
+9 V
Gate Voltage (VGG)
-1.5 to -0.5 V
Input RF Power (CW)
25 dBm
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2.4 Pin Descriptions
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Pin
Pin Name
Description
1,5
Vg
Gate voltage
3
RF IN
Input, matched to 50 ohms
6,10
Vd
Drain voltage
8
RF OUT
2,4,7,9
NC
Output, matched to 50 ohms
No internal connection ( open
or connected to GND )
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3. Application: 8.5 - 10.5 GHz
3.1 Application Circuit
Note 1: The capacitors are recommended on the bias supply line, close to the package,
in order to prevent video oscillations which could damage the module.
3.2 Biasing Procedure
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
Make sure no RF power is applied to the device before continuing.

Pinch off device by setting VGG to -1.5 V.

Raise VDD to +7.0 V while monitoring drain current.

Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.6 V.

Apply RF power.

To improve the thermal and RF performance, ASB recommends a heat sinker attached to the
bottom of the package with an Indium alloy preform.
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3.3 Performance Table
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Min
Typ
Max
Units
-0.95
-0.5
V
Gate Bias Voltage
f = 8.5 - 10.5 GHz
Output Power at Psat1)
f = 8.5 - 10.5 GHz
35
36
dBm
Power Gain at Psat1)
f = 8.5 - 10.5 GHz
17
18
dB
Drain Current at Psat1)
f = 8.5 - 10.5 GHz
1700
Power Added Efficiency at Psat1)
f = 8.5 - 10.5 GHz
39
%
Small Signal Gain
f = 8.5 - 10.5 GHz
22
dB
Gain Flatness
f = 8.5 - 10.5 GHz
1.5
2.0
dB
Input Return Loss
f = 8.5 - 10.5 GHz
-14
-9
dB
Output Return Loss
f = 8.5 - 10.5 GHz
-14
-9
dB
Output TOI2)
Supply Current
Δf = 10 MHz
2-Tone Test
Output power / Tone = +26 dBm
VDD = +7 V
2000
mA
42
dBm
1300
mA
1) Psat: Saturated output power
2) TOI: Third order intercept point
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3.4 Plots of Performances
S-parameter
Input / Output Return Loss vs. Frequency
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
0
Input Return Loss (dB)
Input Return Loss
-5
Output Return Loss
-10
-15
-20
-25
7
9.5
9
8.5
Frequency (GHz)
8
7.5
10
10.5
11
Small Signal Gain vs. Frequency
Small Signal Gain (dB)
VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
7
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7.5
8
8.5
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9 9.5 10 10.5 11 11.5 12
Frequency (GHz)
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Output Power vs. Frequency
Output Power, IDD vs. Input Power
VDD = +7 V, IDD = 1300 mA
VDD = +7 V, IDD = 1300 mA
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
44
Power Added Efficiency (%)
Pin = +10 dBm
Pin = +5 dBm
Pin = +0 dBm
40
9.0 GHz
2800
36
9.5 GHz
2600
10.0 GHz
32
2400
10.5 GHz
28
2200
24
2000
20
1800
16
1600
12
1400
8
1200
4
1000
0
8
8.5
9
9.5
10
Frequency (GHz)
10.5
11
11.5
IDD (mA)
Output Power (dBm)
Pin = +18 dBm
7.5
800
-15
-10
-5
0
5
10 15
Input Power (dBm)
20
25
Power Added Efficiency vs. Frequency
Output TOI vs. Output Power / Tone
VDD = +7 V, IDD = 1300 mA
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
30
54
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
8.5 GHz
Pin = +18 dBm
52
9.0 GHz
9.5 GHz
50
10.0 GHz
48
Pin = +10 dBm
10.5 GHz
46
44
42
40
38
Pin = +5 dBm
36
Pin = +0 dBm
34
7.5
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3000
8.5 GHz
TOI (dBm)
Output Power (dBm)
ASX1037HG
8
8.5
9
9.5
10
Frequency (GHz)
10.5
11
11.5
12
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14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
32
January 2017
ASX1037HG
IMD3 vs. Output Power / Tone
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
-10
8.5 GHz
-15
9.0 GHz
IMD3 (dBc)
-20
9.5 GHz
-25
10.0 GHz
-30
10.5 GHz
-35
-40
-45
-50
-55
-60
-65
-70
12
8/17
14
16
18
20
22
24
Output Power / Tone (dBm)
26
28
30
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Output Power, Drain Current vs. Input Power by Temperature
3000
44
3000
40
2800
40
2800
36
2600
36
2600
32
2400
32
2400
28
2200
28
2200
24
2000
24
2000
20
1800
20
1800
16
1600
16
1600
12
1400
12
1400
8
1200
8
1200
4
1000
4
1000
0
800
0
800
-10
-5
0
10 15
5
Input Power (dBm)
20
25
-15
30
-5
0
5
10 15
Input Power (dBm)
20
25
30
VDD = +7 V, IDD = 1300 mA @ 10.0 GHz
3000
44
3000
40
2800
40
2800
36
2600
36
2600
32
2400
32
2400
28
2200
28
2200
24
2000
24
2000
20
1800
20
1800
16
1600
16
1600
12
1400
12
1400
8
1200
8
1200
4
1000
4
1000
0
800
0
800
-15
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-10
-5
0
5
10 15
Input Power (dBm)
20
25
-15
30
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Output Power (dBm), Gain (dB)
44
IDD (mA)
Output Power (dBm), Gain (dB)
VDD = +7 V, IDD = 1300 mA @ 9.5 GHz
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-10
-5
0
5
10 15
Input Power (dBm)
20
25
30
January 2017
IDD (mA)
-15
Output Power (dBm), Gain (dB)
44
IDD (mA)
VDD = +7 V, IDD = 1300 mA @ 9.0 GHz
IDD (mA)
Output Power (dBm), Gain (dB)
VDD = +7 V, IDD = 1300 mA @ 8.5 GHz
ASX1037HG
44
3000
40
2800
36
2600
32
2400
28
2200
24
2000
20
1800
16
1600
12
1400
8
1200
4
1000
0
800
-15
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-10
-5
0
5
10 15
Input Power (dBm)
20
25
IDD (mA)
Output Power (dBm), Gain (dB)
VDD = +7 V, IDD = 1300 mA @ 10.5 GHz
30
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VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 8.5 GHz
@ 9.0 GHz
52
52
50
50
48
48
46
46
TOI (dBm)
TOI (dBm)
Output TOI vs. Output Power / Tone by Temperature
44
42
40
38
38
36
36
34
34
14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
12
32
14
16
18 20 22 24 26
Output Power / Tone (dBm)
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 9.5 GHz
@ 10.0 GHz
52
52
50
50
48
48
46
46
TOI (dBm)
TOI (dBm)
42
40
12
44
42
28
30
32
28
30
32
44
42
40
40
38
38
36
36
34
34
12
11/17
44
14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
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12
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16
18 20 22 24 26
Output Power / Tone (dBm)
January 2017
ASX1037HG
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 10.5 GHz
52
50
48
TOI (dBm)
46
44
42
40
38
36
34
12
12/17
14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
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VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 8.5 GHz
@ 9 GHz
-10
-10
-15
-15
-20
-20
-25
-25
-30
-30
IMD3 (dBc)
IMD3 (dBc)
IMD3 vs. Output Power / Tone by Temperature
-35
-40
-45
-40
-45
-50
-50
-55
-55
-60
-60
-65
-65
-70
-70
12
14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
32
12
18 20 22 24 26
Output Power / Tone (dBm)
@ 9.5 GHz
@ 10.0 GHz
-10
-15
-15
-20
-20
-25
-25
-30
-30
-35
-40
-45
-55
-60
-60
-65
-65
-70
-70
18 20 22 24 26
Output Power / Tone (dBm)
28
30
12
32
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32
-45
-55
16
30
-40
-50
14
28
-35
-50
13/17
16
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
-10
12
14
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
IMD3 (dBc)
IMD3 (dBc)
-35
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14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
32
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ASX1037HG
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
@ 10.5 GHz
-10
-15
-20
-25
IMD3 (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
12
14/17
14
16
18 20 22 24 26
Output Power / Tone (dBm)
28
30
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Output Power vs. Frequency
Output TOI vs. Temperature
VDD = +7 V, IDD = 1300 mA, Pin = +18 dBm, CW
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz,
Output Power / Tone +26 dBm
52
42
8.5 GHz
50
40
9.0 GHz
9.5 GHz
48
46
38
TOI (dBm)
Output Power (dBm)
10.0 GHz
36
34
10.5 GHz
44
42
40
38
36
32
34
30
32
7.5
8
8.5
9
9.5
Frequency (GHz)
10
10.5
11
-60
-40
-20
0
40
20
Temperature
60
80
100
IMD3 vs. Temperature
VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz,
Output Power / Tone +26 dBm
-22
8.5 GHz
-24
9.0 GHz
9.5 GHz
-26
10.0 GHz
IMD3 (dBc)
-28
10.5 GHz
-30
-32
-34 ㅍ
-36
-38
-40
-42
-44
-60
15/17
-40
-20
0
20
40
Temperature (ºC)
60
80
100
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4. Mounting Instructions for Flange Package
4.1 Screw Mounting
4.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1.
Table 1. Recommended and Maximum Torque for Screw Mounting
Package
Recommended
Screw
Recommended
Torque
Maximum Torque
Flange
M2.0
10 N-cm (0.9 lb-in)
15 N-cm (1.3 lb-in)
4.1.2 First, tighten the screws with a torque driver set to 5 N-cm
4.1.3 The surface finish of the heat sinker should be better than 0.8 µm and the surface flatness must
be better than 10 µm.
4.1.4 Silicon based heat sink compounds should not be used for the thermal conductive grease. It
causes the poor grounding of the source flange, contamination, and long term degradation of
thermal resistance between the package and heat sinker.
4.2. Solder Mounting
4.2.1 Recommended solder is lead-free solder (Sn-3.0Ag-0.5Cu) or equivalent.
4.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods.
4.2.3 The recommended soldering conditions are as follows:
Partial heating method: Soldering iron, spot laser/air
Product terminal temperature: 260°C, max. 10 sec/terminal or 400°C, max. 3 sec/terminal
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5. Package Outline
Units: mm [in]
*Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted.
(End of Datasheet)
Copyright 2015-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB
assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet
may be copied or reproduced in any form or by any means without the prior written consent of ASB.
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