BC807F Semiconductor PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with BC817F Ordering Information Type NO. Marking BC807F Package Code0 LA SOT-23F : hFE rank Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2085-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC807F (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Collector-Emitter saturation voltage VCE(sat) - - V VCE=-1V, IC=-300mA - - -1.2 V IC=-500mA, IB=-50mA - - -700 mV - - -100 nA ICBO VCB=-25V, IE=0 DC current gain hFE* VCE=-1V, IC=-100mA Collector output capacitance fT Cob Unit -35 Collector cut-off current Transition frequency Min. Typ. Max. 100 - 630 - VCB=-5V, IE=10mA f=100MHz - 100 - MHz VCB=-10V, IE=0, f=1MHz - 16 - pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 KST-2085-000 2 BC807F Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 3 IC - VCE Fig. 2 IC -VBE Fig. 4 hFE - IC Fig. 5 VCE (sat)- IC KST-2085-000 3