AUK BC807F Pnp silicon transistor (high current application switching application) Datasheet

BC807F
Semiconductor
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary Pair with BC817F
Ordering Information
Type NO.
Marking
BC807F
Package Code0
LA
SOT-23F
: hFE rank
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
KST-2085-000
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
PIN Connections
1. Base
2. Emitter
3. Collector
1
BC807F
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-50
V
Collector-Emitter voltage
VCEO
-35
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-800
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
Base-Emitter turn on voltage
VBE(ON)
Collector-Emitter saturation voltage
VCE(sat)
-
-
V
VCE=-1V, IC=-300mA
-
-
-1.2
V
IC=-500mA, IB=-50mA
-
-
-700
mV
-
-
-100
nA
ICBO
VCB=-25V, IE=0
DC current gain
hFE*
VCE=-1V, IC=-100mA
Collector output capacitance
fT
Cob
Unit
-35
Collector cut-off current
Transition frequency
Min. Typ. Max.
100
-
630
-
VCB=-5V, IE=10mA
f=100MHz
-
100
-
MHz
VCB=-10V, IE=0, f=1MHz
-
16
-
pF
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
KST-2085-000
2
BC807F
Electrical Characteristic Curves
Fig. 1 Pc-Ta
Fig. 3 IC - VCE
Fig. 2 IC -VBE
Fig. 4 hFE - IC
Fig. 5 VCE (sat)- IC
KST-2085-000
3
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