CS220-8B CS220-8D CS220-8M CS220-8N SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-8B series types are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=90°C) IT(RMS) Peak One Cycle Surge Current, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power Dissipation, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs -8B 200 CS220 -8D -8M 400 600 -8N 800 8.0 UNITS V A ITSM I2t 60 A 18 A2s PGM PG(AV) 40 W 1.0 W IFGM VFGM 4.0 A 16 V VRGM di/dt 5.0 V 50 A/μs -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 2.5 °C/W Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C IGT IH VGT VD=12V, RL=10Ω IT=100mA VTM VD=12V, RL=10Ω ITM=16A, tp=380μs dv/dt VD=⅔Rated VDRM, TC=125°C 200 MAX 10 UNITS μA 2.0 mA 3.0 15 mA 7.3 20 mA 0.9 1.5 V 1.3 1.8 V V/μs R4 (24-October 2013) CS220-8B CS220-8D CS220-8M CS220-8N SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R4 (24-October 2013) w w w. c e n t r a l s e m i . c o m CS220-8B CS220-8D CS220-8M CS220-8N SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R4 (24-October 2013) w w w. c e n t r a l s e m i . c o m