Zetex FMMT3903 Sot23 npn silicon planar switching transistor Datasheet

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 94
FMMT3903
FMMT3904
✪
COMPLIMENTARY TYPES – FMMT3903 - FMMT3905
FMMT3904 - FMMT3906
PARTMARKING DETAIL –
E
C
B
FMMT3903 - 1W
FMMT3904 - 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
60
V
CollectorEmitter Voltage
V CEO
40
V
EmitterBase Voltage
V EBO
6
V
Continuous Collector Current
IC
200
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
FMMT3903
PARAMETER
SYMBOL
MIN.
FMMT3904
MAX. MIN.
MAX.
UNIT CONDITIONS.
Collector Base
V (BR)CBO
Breakdown Voltage
60
60
V
I C=10µA, I E=0
CollectorEmitter
V (BR)CEO
Breakdown Voltage
40
40
V
I C=1mA, I B=0*
EmitterBase
V (BR)EBO
Breakdown Voltage
6
6
V
I E=10µA, I C=0
CollectorEmitter
CutOff Current
I CEX
50
50
nA V CE=30V, V BE(off) =3V
Base CutOff
Current
I BEX
50
50
nA V CE=30V, V EB(off) =3V
Static Forward
Current Transfer
Ratio
h FE
20
35
50
30
15
CollectorEmitter
V CE(sat)
Saturation Voltage
150
40
70
100
60
30
0.2
0.3
0.85
0.95
0.65
300
0.2
0.3
V
V
I C=10mA, I B=1mA*
I C=50mA, I B=5mA*
0.85
0.95
V
V
I C=10mA, I B=1mA*
I C=50mA, I B=5mA*
BaseEmitter
V BE(sat)
Saturation Voltage
0.65
Transition
Frequency
fT
250
Output
Capacitance
C obo
4
4
Input Capacitance C ibo
8
8
300
78
I C=0.1mA, V CE=1V*
I C=1mA, V CE=1V*
I C=10mA, V CE=1V*
I C=50mA, V CE=1V*
I C=100mA, V CE=1V*
MHz I C=10mA, V CE=20V
f=100MHz
pF
pF
V CB=5V, I E=0, f=100KHz
V BE=0.5V, I C=0, f=100KHz
FMMT3903
FMMT3904
SWITCHING CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
FMMT3903
FMMT3904
MIN.
MIN.
PARAMETER
SYMBOL
Noise Figure
N
6
5
dB
VCE=5V IC=200µA,
Rg=2KΩ
f=30Hz to 15KHz at
-3dB points
Delay Time
td
35
35
ns
Rise Time
tr
35
35
ns
V CC=3V, I C=10mA,
I B1=1mA
V BE(off)=0.5V
(See Figure1)
Storage Time
ts
175
200
ns
Fall Time
tf
50
50
ns
MAX.
MAX.
UNIT CONDITIONS.
V CC=3V, I C=10mA
I B1= I B2=1mA
(See Figure2)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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