Data Sheet HAT2215R Silicon N Channel Power MOSFET High Speed Power Switching REJ03G0486-0301 Rev.3.01 Jan 20, 2017 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 7 8 D D 5 7 6 3 1 2 4 2 G 5 6 D D 4 G S1 MOS1 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 80 20 3.4 20.4 3.4 Unit V V A A A Pch Note2 Pch Note3 Tch Tstg 1.5 2.2 150 –55 to +150 W W C C Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s REJ03G0486-0301 Rev.3.01 Jan 20, 2017 Page 1 of 7 HAT2215R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 20 — — 1.0 — — 4.2 — — — — — — — — — Typ — — — — — 88 100 7.0 400 57 24 7.3 1.1 1.3 6.0 4.0 39 Max — — 10 1 2.5 115 145 — — — — — — — — — — Unit V V A A V m m S pF pF pF nC nC nC ns ns ns — — — 3.5 0.83 30 — 1.08 — ns V ns Test Conditions ID = 10 mA, VGS = 0 ID = 100 A, VGS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.7 A, VGS = 10 V Note4 ID = 1.7 A, VGS = 4.5 V Note4 ID = 1.7 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VDD = 25 V VGS = 10 V ID = 3.4 A VGS =10 V, ID = 1.7 A VDD 30 V RL = 17.6 Rg = 4.7 IF = 3.4 A, VGS = 0 Note4 IF =3.4 A, VGS = 0 diF/ dt = 100 A/s Notes: 4. Pulse test REJ03G0486-0301 Rev.3.01 Jan 20, 2017 Page 2 of 7 HAT2215R Main Characteristics Power vs. Temperature Derating 2.0 1.0 Dr ive 1D O pe riv ra eO pe 0 50 PW DC 1 =1 0m s( Op era 1s tio 0.1 Operation in n( PW this area is limited by RDS(on) ho t) ≤ 1Note 0s 4 ) 0.01 tio n rat ID (A) 3.0 10 10 μs 0μ 1m s s 10 Drain Current Pch (W) Channel Dissipation Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 2 Maximum Safe Operation Area 100 4.0 Ta = 25°C 0.001 1 shot Pulse ion 100 150 Ambient Temperature 0.1 200 1 10 100 Drain to Source Voltage VDS (V) Ta (°C) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 3.2 V 5 3.0 V VGS = 2.8 V VDS = 10 V Pulse Test ID (A) 4.5 V 10 V Drain Current Drain Current Typical Transfer Characteristics 10 3.4 V ID (A) 10 5 Pulse Test 500 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Pulse Test 400 300 200 ID = 2 A 100 1A 0.5 A 0 15 5 10 20 Gate to Source Voltage VGS (V) REJ03G0486-0301 Rev.3.01 Jan 20, 2017 0 10 5 (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 Tc = 75°C 25°C −25°C 2 3 4 Gate to Source Voltage VGS 100 VGS = 4.5 V 10 V 10 0.1 Pulse Test 1 Drain Current 10 ID (A) 100 Page 3 of 7 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test ID = 0.5 A, 1 A, 2 A 200 150 VGS = 4.5 V 0.5 A, 1 A, 2 A 100 50 0 -25 10 V 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25°C 10 3 1 0.3 0.1 25°C 75°C 0.01 0.01 1 3 10 ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss 500 50 20 di / dt = 100 A / μs VGS = 0, Ta = 25°C 1 3 Reverse Drain Current 200 100 50 Coss 20 Crss 10 5 VGS = 0 f = 1 MHz 2 0 10 IDR (A) VDD = 50 V 25 V 10 V VDS 12 40 8 20 0 4 VDD = 50 V 25 V 10 V 2 4 Gate Charge REJ03G0486-0301 Rev.3.01 Jan 20, 2017 6 8 Qg (nC) 40 50 0 10 td(off) 50 Switching Time t (ns) 60 VGS 16 VGS 80 30 Switching Characteristics (V) ID = 3.4 A 20 100 20 Gate to Source Voltage 100 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 0.3 1000 10 Drain to Source Voltage 0.03 0.1 Drain Current Body-Drain Diode Reverse Recovery Time 100 VDS = 10 V Pulse Test 0.03 Capacitance C (pF) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2215R 20 tf 10 5 td(on) tr 2 VGS = 10 V, VDD = 30 V Rg = 4.7 Ω, duty ≤ 1 % 1 0.1 0.2 1 2 0.5 5 Drain Current ID (A) 10 Page 4 of 7 HAT2215R Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 10 V 5 VGS = 0 V, –5 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 2.0 IAP = 3.4 A VDD = 50 V duty < 0.1 % Rg > 50 Ω 1.6 1.2 0.8 0.4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) VSD (V) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL 10% Vin V DS = 30 V Vin 10 V Vout 10% 90% td(on) Avalanche Test Circuit VDS Monitor tr 10% 90% td(off) tf Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD I AP Monitor V (BR)DSS IAP Rg D. U. T VDS VDD ID Vin 10 V 50 Ω 0 REJ03G0486-0301 Rev.3.01 Jan 20, 2017 VDD Page 5 of 7 HAT2215R Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation) 10 1 0.1 D=1 0.5 0.2 0.1 0.05 θch - f(t) = γs (t) x θch - f θch - f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 1 0.0 lse t pu o h 1s PDM D= 0.001 PW T PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 ot 1sh θch - f(t) = γs (t) x θch - f θch - f = 210°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) se pul PDM 0.001 D= PW T PW T 0.0001 10 μ 100 μ REJ03G0486-0301 Rev.3.01 Jan 20, 2017 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Page 6 of 7 HAT2215R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z *3 NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Terminal cross section (Ni/Pd/Au plating) bp x M e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L 0.40 L1 0.60 1.27 1.08 Ordering Information Orderable Part Number HAT2215R-EL-E Note: Quantity 2500 pcs Shipping Container Taping For some grades, production may be terminated. Please contact the Renesas sales Office to check the state of production before ordering the product. REJ03G0486-0301 Rev.3.01 Jan 20, 2017 Page 7 of 7 General Precautions in the Handling of Power MOSFET and IGBT Products The following usage notes are applicable to general purpose Power MOSFET and IGBT products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products. 1. Derating Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. 2. Quality grade The quality grade of this product is “Standard”. If you plan to use this product to “High quality” application, please inform to Renesas. Fail safe system is necessary to prevent malfunction even if this product is broken. Notice 1. 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