HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE(sat) tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 100 @ 0.8 VCES A PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Mounting torque TO-247AD TO-264 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Symbol C (TAB) E TO-268 (D3) ( IXGT) G C (TAB) E TJ Md C Maximum Ratings 6 10 4 IC = 250µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved g g g Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVCES TJ = 25°C TJ = 125°C G C E (TAB) TO-264 AA (IXGK) G C °C 300 TO-247 TO-264 TO-268 Test Conditions 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-268 Leaded (IXGJ) V 5.0 V 200 1 µA mA ±100 nA 2.3 V G = Gate E = Emitter E C (TAB) D = Drain TAB = Collector Features • International standard packages • High frequency IGBT • Latest generation HDMOSTM process • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (insulated mounting screw hole) • Switching speed for high frequency applications • High power density 95585F(12/02) IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x . gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 25 4100 VCE = 25 V, VGE = 0 V, f = 1 MHz QG pF 95 pF 160 nC 30 nC 55 nC IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) Inductive load, TJ = 25°°C 50 ns tri IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.7 Ω 50 ns td(off) tfi Eoff td(on) tri Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG TO-268 (IXGT) Outline Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 250 ns 3.0 4.5 mJ e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 50 ns ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 50 ns 3 mJ R S 4.32 6.15 5.49 BSC .170 242 .216 BSC 200 ns 250 ns 4.2 mJ 0.42 TO-247 & TO-268 leaded packages TO-264 package Dim. 120 RthJC RthCK ns Terminals: 1 - Gate 2 -Collector 3 -Emitter Tab-Collector 250 Inductive load, TJ = 125°°C VCE = 0.8 • VCES, RG = Roff = 2.7 Ω 3 150 IC = IC90, VGE = 15 V Eon 2 pF 310 Cres QGE S 1 Cies Coes 42 TO-247 AD (IXGH) Outline 0.25 0.15 TO-264 AA (IXGK) Outline K/W K/W K/W TO-268 (IXGJ) Leaded Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Terminals: 1 - Gate 2Collector Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 100 200 VGE = 15V 13V 11V 9V TJ = 25°C 7V 60 40 1 2 3 4 7V 80 40 5V 0 5V 0 5 0 2 4 VCE - Volts 6 8 VCE - Volts Figure 4. Temperature Dependence of VCE(sat) 100 1.6 TJ = 125°C V = 15V GE 13V 11V VGE = 15V VCE (sat) - Normalized 9V 7V 60 40 5V 20 0 0 1 2 3 4 1.2 IC = 50A 1.0 IC = 25A 0.8 0.6 0.4 25 5 IC = 100A 1.4 50 75 VCE - Volts 100 125 Figure 6. Capacitance Curves 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 60 40 TJ = 25°C TJ = 125°C 1000 Coss 100 Crss 20 0 150 TJ - Degrees C Figure 5. Admittance Curves IC - Amperes 10 Figure 3. Saturation Voltage Characteristics 80 IC - Amperes 9V 120 20 0 11V VGE = 15V 13V 160 IC - Amperes IC - Amperes 80 TJ = 25°C 10 0 2 4 6 VGE - Volts © 2002 IXYS All rights reserved 8 10 0 5 10 15 20 25 VCE-Volts 30 35 40 IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B Figure 7. Dependence of EON and EOFF on IC 6 12 E(ON) 5 6 10 8 E(OFF) 3 6 2 4 1 E(ON) 4 8 E(ON) 3 6 20 40 60 80 4 E(OFF) 2 E(ON) 0 E(OFF) IC = 50A 2 1 2 0 10 E(OFF) IC = 100A IC =25A 0 0 100 E(OFF) - millijoules 4 E(OFF) - milliJoules RG = 4.7Ω 12 TJ = 125°C 5 E(ON) - millijoules TJ = 125°C E(ON) - millijoules Figure 8. Dependence of EON and EOFF on RG 0 0 10 20 30 40 50 60 RG - Ohms IC - Amperes Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area 600 16 IC = 25A VCE = 250V 100 IC - Amperes VGE - Volts 12 8 TJ = 125°C 10 RG = 6.2 Ω dV/dt < 5V/ns 1 4 0.1 0 0 40 80 120 160 0 200 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Figure 11. IGBT Transient Thermal Resistance ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1