0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. Chip Outline G • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz Description The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. S G D S Electrical Specifications, TA = 25°C Symbol NFO GA Parameters and Test Conditions[1] Optimum Noise Figure: VCE = 2 V, IDS = 25 mA Gain @ NFO; VDS = 2 V, IDS = 25 mA Units f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB Min. Typ. Max. 0.4 0.55 0.8 12.0 0.7 17.0 14.0 12.0 P1 dB Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA f = 4.0 GHz dBm 21.0 G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 15.0 gm Transconductance: VDS = 2 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA mmho 80 140 mA 70 130 180 V -3.0 -1.3 -0.8 Note: 1. RF performance is determined by packaging and testing 10 devices per wafer. 5-19 5965-8702E ATF-10100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Absolute Maximum[1] +5 -4 -7 IDSS 430 175 -65 to +175 Units V V V mA mW °C °C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 4.4 mW/°C for TCASE > 78°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See APPLICATIONS PRIMER IIIA for more information. θjc = 225°C/W; TCH = 150°C 1 µm Spot Size[4] Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Tray ATF-10100-GP3 50 18 ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA Mag Ang 1.0 2.0 4.0 6.0 8.0 0.4 0.4 0.55 0.8 1.0 0.78 0.55 0.39 0.41 0.46 13 27 65 105 144 0.40 0.29 0.22 0.16 0.10 GA 2.0 RN/50 NFO (dB) NFO dB 12 1.5 9 1.0 6 GA (dB) Γopt Freq. GHz 15 NFO 0.5 0 2.0 4.0 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25°C. ATF-10100 Typical Performance, T A = 25°C 16 NFO (dB) 1.5 20 20 MSG MAG |S21|2 0.5 MSG MAG |S21|2 10 10 1.0 GAIN (dB) 10 GAIN (dB) 12 GA GA (dB) 14 30 30 NFO 0 0 10 20 30 IDS (mA) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2V, f = 4.0 GHz. 0 1.0 2.0 4.0 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. 5-20 0 1.0 2.0 4.0 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 4 V, IDS = 70 mA. Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA Freq. MHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. .93 .83 .78 .72 .70 .68 .71 .72 .71 .70 .70 .70 .70 .70 .73 .77 .76 .77 Ang. -46 -78 -94 -104 -120 -139 -157 168 -177 175 167 162 159 155 149 138 134 134 dB 17.7 15.6 13.9 12.4 11.2 10.0 8.6 7.4 6.5 6.0 5.5 5.0 4.5 4.1 3.9 3.2 1.8 1.3 S21 Mag. 7.63 6.08 4.97 4.18 3.65 3.18 2.69 2.35 2.12 1.99 1.88 1.77 1.68 1.61 1.56 1.45 1.23 1.16 Ang. 148 127 114 103 92 80 69 60 53 46 38 31 25 20 14 5 0 -1 dB -25.5 -21.4 -19.8 -18.7 -17.9 -17.6 -17.5 -17.5 -17.4 -16.9 -16.6 -16.3 -15.8 -15.5 -15.0 -14.7 -14.4 -13.9 S12 Mag. .053 .085 .102 .116 .127 .132 .133 .133 .135 .143 .148 .154 .162 .168 .177 .184 .190 .201 S22 Ang. 64 52 45 41 36 31 25 22 19 17 15 13 11 10 8 6 5 4 Mag. .33 .31 .30 .29 .25 .19 .18 .20 .22 .22 .23 .24 .26 .28 .30 .32 .35 .38 Ang. -56 -63 -72 -80 -90 -113 -156 -178 174 169 164 153 143 133 123 119 114 106 Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 70 mA Freq. MHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. .87 .74 .72 .67 .67 .68 .73 .74 .75 .75 .75 .74 .74 .75 .76 .77 .79 .80 Ang. -60 -96 -112 -122 -137 -154 -168 -177 175 166 156 150 148 145 140 135 130 125 dB 20.6 17.5 15.2 13.4 12.0 10.5 9.0 7.7 6.8 6.2 5.6 5.1 4.6 4.2 3.9 3.2 1.8 1.3 S21 Mag. 10.72 7.50 5.77 4.68 3.97 3.36 2.81 2.44 2.19 2.04 1.90 1.79 1.69 1.62 1.57 1.45 1.23 1.16 Ang. 136 113 101 91 81 70 61 54 47 39 32 25 19 14 9 -1 -6 -6 5-21 dB -26.4 -23.5 -22.2 -21.3 -20.6 -20.3 -20.1 -19.8 -19.6 -18.9 -18.4 -17.9 -16.9 -16.2 -15.7 -15.5 -15.3 -14.4 S12 Mag. .048 .067 .078 .086 .093 .097 .099 .102 .105 .113 .120 .128 .143 .155 .164 .168 .171 .191 S22 Ang. 55 43 39 38 36 35 33 31 31 29 27 26 25 24 21 18 18 18 Mag. .33 .29 .28 .27 .24 .17 .13 .12 .12 .13 .13 .14 .15 .17 .21 .24 .28 .32 Ang. -59 -66 -69 -72 -77 -95 -127 -159 -165 -171 -177 173 166 154 142 133 125 117 ATF-10100 Chip Dimensions 218 µm 8.58 mil 218 µm 8.58 mil G G 32 µm 1.26 mil 163 µm 6.42 mil S D S 279.4 µm 11 mil 218 µm 8.58 mil 304.8 µm 12 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. 5-22